- Tytuł:
- Characterized Microstructure and Electrical Properties of Hydrogenated Nanocrystalline Silicon Films by Raman and Electrical Conductivity Spectra
- Autorzy:
-
Xiao-Yong, Gao
Jian-Tao, Zhao
Yu-Fen, Liu
Qing-Geng, Lin
Yong-Sheng, Chen
Jin-Hua, Gu
Shi-E, Yang
Jing-Xiao, Lu - Powiązania:
- https://bibliotekanauki.pl/articles/1808127.pdf
- Data publikacji:
- 2009-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.23.Cq
73.61.-r - Opis:
- Microstructure and electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) film deposited on glass substrate at low temperature were characterized by average grain size, crystallinity, and dark electrical conductivity data obtained from the Raman and electrical conductivity spectroscopy, respectively. The average grain size, crystallinity and electrical conductivity have a similar change with substrate temperature. A threshold substrate temperature determined by silane concentration appears in their corresponding spectroscopy vs. substrate temperature. The dependence of crystallinity, average grain size and electrical conductivity on substrate temperature were accounted for by surface diffusion model and heterojunction quantum dot model, respectively.
- Źródło:
-
Acta Physica Polonica A; 2009, 115, 3; 738-741
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł