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Wyszukujesz frazę "Langer, J. M." wg kryterium: Autor

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    Wyświetlanie 1-13 z 13
    Tytuł:
    Photostriction of CdF$\text{}_{2}$:In Crystals
    Autorzy:
    Suchocki, A.
    Raułuszkiewicz, J.
    Langer, J. M.
    Koziarska-Glinka, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968426.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.16.Ch
    61.72.Hh
    74.62.Dh
    Opis:
    Lattice relaxation accompanying phototransformation of In bistable centers from the ground, deep state to the shallow state in CdF$\text{}_{2}$ crystal has been measured with the use of scanning tunnelling microscope. It is shown that relatively small macroscopic changes of the crystal length in the order of 1.8×10$\text{}^{-6}$ accompany the phototransformation of In ions. Lattice expansion upon the influence of population of shallow donor levels in CdF$\text{}_{2}$ explains the observed small changes of lattice constant during the process.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 1005-1008
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    GaAs-Based Quantum Well Exciton-Polaritons beyond 1 μm
    Autorzy:
    Pieczarka, M.
    Podemski, P.
    Musiał, A.
    Ryczko, K.
    Sęk, G.
    Misiewicz, J.
    Langer, F.
    Höfling, S.
    Kamp, M.
    Forchel, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399094.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.-b
    78.67.-n
    78.67.Pt
    Opis:
    Realization of the Bose-Einstein condensate can provide a way for creation of an inversion-free coherent light emitter with ultra-low threshold power. The currently considered solutions provide polaritonic emitters in a spectral range far below 1 μm limiting their application potential. Hereby, we present optical studies of InGaAs/GaAs based quantum well in a cavity structure exhibiting polaritonic eigenmodes from 5 to 160 K at a record wavelength exceeding 1 μm. The obtained Rabi splitting of 7 meV was almost constant with temperature, and the resulting coupling constant is close to the calculated QW exciton binding energy. This indicates the very strong coupling conditions explaining the observation of polaritons at temperatures where the exciton dissociation is already expected, and allows predicting that room temperature polaritons could still be formed in this kind of a system.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 817-820
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Oscillator strength of optical transitions in InGaAsN/GaAsN/GaAs quantum wells
    Autorzy:
    Mika, A
    Sek, G
    Ryczko, K
    Kozub, M
    Musial, A
    Marynski, A
    Misiewicz, J
    Langer, F
    Höfling, S
    Appel, T
    Kamp, M
    Forchel, A
    Powiązania:
    https://bibliotekanauki.pl/articles/173586.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    dilute nitride
    quantum well
    oscillator strength
    Opis:
    Experimental and theoretical considerations and results on the effect of nitrogen incorporation on the oscillator strength of optical transitions in InGaNAs/GaAs quantum wells (QWs) are presented. Therefore, a set of dilute nitride quantum well structures was grown by molecular beam epitaxy. Optical investigation via spectroscopic methods have been performed at various temperatures for both the as-grown samples, and after rapid thermal annealing. The fundamental transition energy and its oscillator strength vs. the QW composition have been systematically investigated. Additionally, the effect of the bandgap discontinuities on the transitions intensity has also been considered. The experimental data have been confronted with the band structure calculations within the effective mass approximation employing a two level repulsion model for the nitrogen-containing structures. The obtained results are crucial for possible future applications employing the quantum well in cavity structures and bringing the practical exploitation of quantum electrodynamics phenomena to the telecommunication spectral range.
    Źródło:
    Optica Applicata; 2013, 43, 1; 53-60
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    New sauropodomorph and cynodont remains from the Late Triassic Sacisaurus site in southern Brazil and its stratigraphic position in the Norian Caturrita Formation
    Autorzy:
    Marsola, J.C.A.
    Bittencourt, J.S.
    Da Rosa, A.A.S.
    Martinelli, A.G.
    Ribeiro, A.M.
    Ferigolo, J.
    Langer, M.C.
    Powiązania:
    https://bibliotekanauki.pl/articles/21152.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Instytut Paleobiologii PAN
    Opis:
    Sacisaurus agudoensis is the only silesaurid known from the Triassic beds of the Santa Maria Supersequence and the correlation of its type locality to the other Triassic deposits of south Brazil has always been controversial. In an attempt to improve this, a handful of dinosaur and cynodont remains found associated to S. agudoensis are here described and compared. The anatomy of the sauropodomorph is more similar to that of Norian forms such as Pantydraco caducus and Unaysaurus tolentinoi than to that of Carnian taxa such as Saturnalia tupiniquim and Pampadromaeus barberenai. The cynodonts recovered based on isolated teeth include a brasilodontid and a Riograndia-like form. This assemblage is consistent with a Norian age, as is also suggested by local stratigraphic correlation, which positions the site in the Caturrita Formation.
    Źródło:
    Acta Palaeontologica Polonica; 2018, 63, 4
    0567-7920
    Pojawia się w:
    Acta Palaeontologica Polonica
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Use of Bistable Centers in CdF$\text{}_{2}$ for Holographic Recording
    Autorzy:
    Langer, J. M.
    Koziarska-Glinka, B.
    Suchocki, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1967998.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.40.Lx
    78.20.Ci
    42.40.Ht
    Opis:
    It is shown that metastable centers in various semiconductors can be used for efficient hologram recording. This type of holographic materials has a very high dynamic range and sensitivity. Their major drawback for possible applications is low metastability temperature. This problem can be overcome by using CdF$\text{}_{2}$:Ga crystals, which exhibit metastability below 240 K. This material is suitable for writing thick and multiple holograms both in static and dynamic regimes.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 673-683
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Light-Induced Gratings in CdMnTeSe:In Crystals
    Autorzy:
    Koziarska-Glinka, B.
    Ponder, M.
    Wojtowicz, T.
    Miotkowski, I.
    Langer, J. M.
    Suchocki, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968302.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.62.Dh
    42.65.Hw
    61.72.Ji
    Opis:
    We show that DX-like centers in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{x}$:In crystal can be used in writing volume holographic gratings. The scattering efficiency is higher than 10% which proves the dispersive character of the light-induced gratings. Two different metastable centers with different lattice relaxation were found in the crystal. Measurements of the power dependence of the degenerate four-wave mixing scattering efficiency testify that both of these centers have negative U properties.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 883-886
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Holographic Recording with the Use of Bistable Centers in CdF$\text{}_{2}$
    Autorzy:
    Koziarska, B.
    Langer, J. M.
    Ryskin, A. I.
    Shcheulin, A. S.
    Suchocki, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934064.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.40.Lx
    78.50.Ge
    78.20.Ci
    42.40.Ht
    Opis:
    We show that bistability and metastability of In and Ga impurities in CdF$\text{}_{2}$ crystals can be efficiently used in writing volume holographic gratings. Phototransformation of these impurities from the localized to the hydrogenic state leads to a large change of the local polarizability of the host, and thus a significant change of the refractive index. While CdF2:In can be used only at low temperatures (below 150 K), CdF2:Ga crystals are suitable for room temperature recording.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 1010-1012
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Implantation of Rare-Earth Atoms into Si and III-V Compounds
    Autorzy:
    Kozanecki, A.
    Langer, J. M.
    Peaker, A. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924312.pdf
    Data publikacji:
    1993-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.Jh
    78.55.-m
    Opis:
    Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.
    Źródło:
    Acta Physica Polonica A; 1993, 83, 1; 59-70
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mechanisms of Yellow and Red Photoluminescence in Wurtzite and Cubic GaNDOI
    Autorzy:
    Godlewski, M.
    Suski, T.
    Grzegory, I.
    Porowski, S.
    Langer, R.
    Barski, A.
    Bergman, J. P.
    Monemar, B.
    Goldys, E. M.
    Phillips, M. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1969079.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.16.Ch
    61.72.Ff
    71.55.Eq
    Opis:
    The origin of two "deep" photoluminescence (PL) emissions observed in wurtzite (yellow PL) and cubic (red PL) GaN is discussed. PL and time-resolved PL studies confirm donor-acceptor pair character of the yellow band in wurtzite GaN and point to participation of shallow donors in this emission. A similar PL mechanism is proposed for the red emission of cubic GaN. We further show a puzzling property of both yellow and red PLs. Both yellow and red emissions show spatial homogeneity and are only weakly dependent on surface morphology.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 326-330
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Studies of Cubic Phase GaN Grown by Molecular Beam Epitaxy on (001) Silicon Covered with Sic Layer
    Autorzy:
    Godlewski, M.
    Ivanov, V. Yu.
    Bergman, J. P.
    Monemar, B.
    Barski, A.
    Langer, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968103.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    78.47.+p
    Opis:
    In this work we evaluate optical properties of cubic phase GaN epilayers grown on top of (001) silicon substrate prepared by a new process. Prior to the growth Si substrate was annealed at 1300-1400°C in propane. The so-prepared substrate is covered with a thin (≈ 4 nm) SiC wafer, which allowed a successful growth of good morphological quality cubic phase GaN epilayers. The present results confirm recent suggestion on smaller ionization energies of acceptors in cubic phase GaN epilayers.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 777-780
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spectrum of J-frame operators
    Autorzy:
    Giribet, J.
    Langer, M.
    Leben, L.
    Maestripieri, A.
    Peria, F. M.
    Trunk, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/254979.pdf
    Data publikacji:
    2018
    Wydawca:
    Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
    Tematy:
    frame
    Krein space
    block operator matrix
    spectrum
    Opis:
    A J-frame is a frame F for a Krein space (H, [•,•] ) which is compatible with the indefinite inner product [•,•] in the sense that it induces an indefinite reconstruction formula that resembles those produced by orthonormal bases in H. With every J-frame the so-called J-frame operator is associated, which is a self-adjoint operator in the Krein space H. The J-frame operator plays an essential role in the indefinite reconstruction formula. In this paper we characterize the class of J-frame operators in a Krein space by a 2 x 2 block operator representation. The J-frame bounds of F are then recovered as the suprema and infima of the numerical ranges of some uniformly positive operators which are build from the entries of the 2x2 block representation. Moreover, this 2x2 block representation is utilized to obtain enclosures for the spectrum of J-frame operators, which finally leads to the construction of a square root. This square root allows a complete description of all J-frames associated with a given J-frame operator.
    Źródło:
    Opuscula Mathematica; 2018, 38, 5; 623-649
    1232-9274
    2300-6919
    Pojawia się w:
    Opuscula Mathematica
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Pressure Dependence of the Schottky Barrier Heights in Al/AlGaAs Junctions
    Autorzy:
    Dobaczewski, L.
    Langer, J. M.
    Missous, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929743.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.30.+y
    73.40.Kp
    73.20.Hb
    Opis:
    The influence of hydrostatic pressure up to 8 kbar on the barrier height of epitaxially MBE-grown Al on AlGaAs metal-semiconductor junctions is reported. The pressure change of the Schottky barrier on n-type AlGaAs is the same as that of the energy gap (for both direct and indirect-gap AlGaAs compositions), while for p-type AlGaAs it is negligible. This result is in direct conflict with a class of models of the Schottky barrier formation based on a concept of a semiconductor neutrality level alignment with the metal Fermi level.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 741-744
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Impurity Wave Function and Alloy Broadening of Impurity-Related Luminescence
    Autorzy:
    Buczko, R.
    Langer, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929682.pdf
    Data publikacji:
    1993-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.+z
    73.40.Kp
    78.55.-m
    Opis:
    By performing state-of-art computations of the acceptor wave functions in GaAs we show that the linewidth of the conduction band to acceptor luminescence increases more than quadratically with the increase in the binding energy. This proves that study of the fluctuation broadening of the impurity-related emission in semiconductor alloys may provide a critical test for theories claiming realistic impurity wave function computation. The theoretical results are compared with the experimental data for high purity p-type AlGaAs alloys.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 3; 591-594
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-13 z 13

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