- Tytuł:
- Metastability problems in amorphous silicon
- Autorzy:
-
Pietruszko, S.M.
Kostana, M. - Powiązania:
- https://bibliotekanauki.pl/articles/308419.pdf
- Data publikacji:
- 2001
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
amorphous silicon
metastability
thermal quenching - Opis:
- The results of study of the influence of boron and phosphorous doping and hydrogen content on transport properties and thermally induced metastability of LPCVD a-Si are reported. The thermally induced metastability has been observed in both unhydrogenated and hydrogenated P-doped a-Si films. Metastability is a barrier for wide application of a-Si such solar cells. In this paper we report our studies on the effect of thermally induced metastability in LPCVD a-Si as a function of implanted boron and phosphorous concentration. We have investigated films unhydrogenated and hydrogenated by ion implantation. The results are qualitatively agreed with bond breaking model.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2001, 1; 76-79
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł