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Wyszukujesz frazę "Kosiel, K." wg kryterium: Autor

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    Wyświetlanie 1-10 z 10
    Tytuł:
    The Effect of Atomic Layer Deposition of ZrO2 on the Physicochemical Properties of Cobalt based Alloys Intended for Prosthetic Dentistry
    Autorzy:
    Ziębowicz, A.
    Woźniak, A.
    Ziębowicz, B.
    Kosiel, K.
    Chladek, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/355640.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    cobalt alloy
    ZrO2 layer
    SFE
    corrosion
    artificial saliva
    Opis:
    The paper presents the effect of ZrO2 layer deposition by the ALD process on the physicochemical properties of cobalt-based alloys (Realloy C and EOS CoCr SP2) intended for application in prosthetic dentistry. The paper shows the results of the surface roughness measurements made by the AFM method as well as the wettability and free surface energy measurements. Additionally, potentiodynamic tests of pitting corrosion resistance and electrochemical impedance spectroscopy in a solution of artificial saliva were carried out. Tests were carried out on the samples in the initial state and after surface modification with the ZrO2 layer. Based on these results, the usefulness (e.g. enhancement of corrosion resistance and biocompatibility) of the proposed ZrO2 layer on the cobalt alloys was assessed.
    Źródło:
    Archives of Metallurgy and Materials; 2018, 63, 3; 1077-1082
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures
    Autorzy:
    Taube, A.
    Guziewicz, M.
    Kosiel, K.
    Gołaszewska-Malec, K.
    Król, K.
    Kruszka, R.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/953063.pdf
    Data publikacji:
    2016
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    aluminum oxide
    MOS
    silicon carbide
    4H-SiC
    high-K dielectrics
    tlenek glinu
    węglik krzemu
    dielektryki high-k
    Opis:
    The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8 MV/cm were obtained. The use of 5 nm thick SiO2 buffer layer caused a decrease in the leakage current of the gate by more than two decade of magnitude. Evaluated density of trap states near the conduction band of silicon carbide in Al2O3/4H-SiC MOS is about of 1×1013 eV−1cm−2. In contrast, the density of the trap states in the Al2O3/SiO2/4H-SiC structure is lower about of one decade of magnitude i.e. 1×1012 eV−1cm−2. A remarkable change in the MOS structure is also a decrease of density of electron traps located deeply in the 4H-SiC conduction band below detection limit due to using of the SiO2 buffer layer.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 3; 537-551
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    GaAs/AlGaAs (~9.4 žm) quantum cascade lasers operating at 260 K
    Autorzy:
    Bugajski, M.
    Kosiel, K.
    Szerling, A.
    Kubacka-Traczyk, J.
    Sankowska, I.
    Karbownik, P.
    Trajnerowicz, A.
    Pruszy, E.
    Pierciński, K.
    Pierścińska, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/200656.pdf
    Data publikacji:
    2010
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    quantum cascade lasers
    pulsed mode
    Opis:
    The fabrication of Quantum Cascade Lasers (QCLs) emitting at 9.4 um is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded in 77 K were over 1 W, and the slope efficiency 0.5–0.6 W/A per uncoated facet. This has been achieved by the use of GaAs/Al0.45Ga0.55As heterostructure, with 3QW anticrossed-diagonal design originally proposed by Page et al. [1]. Double plasmon planar confinement with Al-free waveguide has been used to minimize absorption losses. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and Si3N4 for electrical insulation. The QCL structures have been grown by Molecular Beam Epitaxy (MBE), with Riber Compact 21T reactor. The stringent requirements – placed particularly on the epitaxial technology – and the influence of technological conditions on the device structure properties are presented and discussed in depth.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2010, 58, 4; 471-476
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers Technology
    Autorzy:
    Szerling, A.
    Karbownik, P.
    Kosiel, K.
    Kubacka-Traczyk, J.
    Pruszyńska-Karbownik, E.
    Płuska, M.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807678.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.60.-q
    85.35.Be
    72.80.Ey
    73.61.Ey
    78.66.Fd
    Opis:
    The fabrication technology of AlGaAs/GaAs based quantum cascade lasers is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W for the GaAs/$Al_{0.45}Ga_{0.55}As$ laser without anti-reflection/high-reflection coatings.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-45-S-47
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Molecular Beam Epitaxy Growth for Quantum Cascade Lasers
    Autorzy:
    Kosiel, K.
    Szerling, A.
    Kubacka-Traczyk, J.
    Karbownik, P.
    Pruszyńska-Karbownik, E.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791281.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    81.15.Hi
    85.60.-q
    85.35.Be
    73.63.-b
    63.22.-m
    72.80.Ey
    73.61.Ey
    78.66.Fd
    Opis:
    The fabrication of quantum cascade lasers emitting at 9 μm is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W and the slope efficiency η ≈ 0.5-0.6 W/A per uncoated facet. This has been achieved by the use of GaAs/$Al_{0.45}Ga_{0.55}As$ heterostructure, with the "anticrossed-diagonal" design. Double plasmon planar confinement with Al-free waveguide has been used to minimize absorption losses. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and $Si_{3}N_{4}$ for electrical insulation. The quantum cascade laser structures have been grown by molecular beam epitaxy, with Riber Compact 21 T reactor. The stringent requirements - placed particularly on the epitaxial technology - and the influence of technological conditions on the device structure properties were presented and discussed in depth.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 806-813
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Study of Thermal Properties of GaAs/AlGaAs Quantum Cascade Lasers
    Autorzy:
    Pruszyńska-Karbownik, E.
    Karbownik, P.
    Szerling, A.
    Kosiel, K.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807668.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.60.-q
    85.35.Be
    72.80.Ey
    Opis:
    Temperature change in quantum cascade laser can be estimated by studying the device resistance change. Using this method we compared quantum cascade laser structure mounted on diamond heat spreader and without heat spreader. We have shown that the use of heat spreader reduces temperature increase even by 40%.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-60-S-61
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The role of photoluminescence excitation spectroscopy in investigation of quantum cascade lasers properties
    Autorzy:
    Wójcik-Jedlińska, A.
    Gradkowski, K.
    Kosiel, K.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/378431.pdf
    Data publikacji:
    2006
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
    Tematy:
    lasery
    AlGaAs
    lasery kaskadowe
    fotoluminescencja
    modelowanie numeryczne
    spektroskopa
    lasers
    Quantum Cascade Laser (QCL)
    photoluminescence
    numerical simulations
    spectroscopy
    Opis:
    The properties of quantum cascade laser (QCL) structures have been investigated by optical technique based on spontaneous emission measurements: photoluminescence excitation (PLE) spectroscopy. Three types of test structures used for obtaining final QCL device were examined , i.e., single sequence of coupled quantum wells, which form an active region of the device, 30 sequences of this active region separated by 25 nm thick AlGaAs barriers and finally complete, undoped structure consisting of 30 of sequences repeated active regions and superlattice injectors. The results has been compared with numerical simulations. The role of such measurements has also been discussed.
    Źródło:
    Electron Technology : Internet Journal; 2005-2006, 37/38, 10; 1-4
    1897-2381
    Pojawia się w:
    Electron Technology : Internet Journal
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Oval defects in crystals grown by MBE technique: study and methods of elimination abstract
    Autorzy:
    Szerling, A.
    Kosiel, K.
    Płuska, M.
    Ochalski, T. J.
    Ratajczak, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/378453.pdf
    Data publikacji:
    2004
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
    Opis:
    The paper is devoted to a group of macroscopic defects which may be found in epitaxial A3 B5 materials grown by MBE technique. Morphology, geometry and optical properties of defects were studied by means of several experimental methods. The experimental data have been compared with the information taken from literature concerning sources of the defects and causes of their appearance.
    Źródło:
    Electron Technology : Internet Journal; 2004, 36, 6; 1-5
    1897-2381
    Pojawia się w:
    Electron Technology : Internet Journal
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The influence of MBE growth conditions on optical properties of InGlGaAs/AlGaAs structures
    Autorzy:
    Kosiel, K.
    Regiński, K.
    Szerling, A.
    Piwoński, T.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/378399.pdf
    Data publikacji:
    2004
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
    Opis:
    Optical properties of compressively strained In₀.₂₄Al₀.₁₉Ga₀.₅₇As layers were investigated as a function of the MBE growth conditions. The optimum temperature of the crystal surface (Ts) for MBE growth of this quaternary layer as well as the optimal cooling down process necessary for achieving appropriate Ts for InAlGaAs were experimentally found.
    Źródło:
    Electron Technology : Internet Journal; 2004, 36, 4; 1-3
    1897-2381
    Pojawia się w:
    Electron Technology : Internet Journal
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    MOVPE InP based material for millimeter and submillimeter wave generation and amplification
    Autorzy:
    Strupiński, W.
    Kosiel, K.
    Jasik, A.
    Jakieła, R.
    Jeleński, A.
    Kollberg, E.
    Dillner, L.
    Nawaz, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308777.pdf
    Data publikacji:
    2002
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    epitaxy InP
    MOVPE
    microwave generation
    Opis:
    The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V compounds makes MOVPE techniques very attractive for modern device applications. The characterisation results of the heterostructures dedicated for HBV varactors and 2-DEG transistors (HEMT) are described.
    Źródło:
    Journal of Telecommunications and Information Technology; 2002, 1; 8-10
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-10 z 10

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