- Tytuł:
- Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures
- Autorzy:
-
Ievtushenko, A.
Lashkarev, G.
Lazorenko, V.
Karpyna, V.
Sichkovskyi, V.
Kosyachenko, L.
Sklyarchuk, V.
Sklyarchuk, O.
Bosy, V.
Korzhinski, F.
Ulyashin, A.
Khranovskyy, V.
Yakimova, R. - Powiązania:
- https://bibliotekanauki.pl/articles/1811930.pdf
- Data publikacji:
- 2008-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.05.Dz
81.15.Cd
85.60.Dw
72.40.+w - Opis:
- Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at λ= 390 nm and the time constant of photoresponse about 10 μs for Al/ZnO:N/Al structures with 4 μm interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio ≈10² at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.
- Źródło:
-
Acta Physica Polonica A; 2008, 114, 5; 1123-1129
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł