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Wyszukujesz frazę "Korwin-Pawłowski, M." wg kryterium: Autor


Wyświetlanie 1-6 z 6
Tytuł:
Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys
Autorzy:
Stęszewski, J.
Jakubowski, A.
Korwin-Pawlowski, M. L.
Powiązania:
https://bibliotekanauki.pl/articles/308627.pdf
Data publikacji:
2007
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
silicon carbide
SiC MOSFET
4H-SiC
6H-SiC
Crosslight Apsys
Silvaco Atlas
Opis:
A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments.
Źródło:
Journal of Telecommunications and Information Technology; 2007, 3; 93-95
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectris
Autorzy:
Janik, T.
Jakubowski, A.
Majkusiak, B.
Korwin-Pawłowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/308423.pdf
Data publikacji:
2001
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
MIS structures
ultrathin dielectrics
high-k dielectrics
Opis:
Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures based on the transfer matrix approach were carried out. They show contribution of different components of this current in MIS structures with best known high-k dielectrics such as Ta2O5 and TiO2. The comparison of the gate leakage current in MIS structures with SiO2 layer as well Ta2O5 and TiO2 layers is presented as well. Additionally, the minimum Si electron affinity to a gate dielectric which allows to preserve given level of the gate leakage current is proposed.
Źródło:
Journal of Telecommunications and Information Technology; 2001, 1; 65-69
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Challenges in ultrathin oxide layers formation
Autorzy:
Beck, R.B.
Jakubowski, A.
Łukasiak, L.
Korwin-Pawłowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/307646.pdf
Data publikacji:
2001
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
silicon technology
oxidation
PECVD
RTO
gate oxide
ultrathin
layers
Opis:
In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the "Roadmap'2000". Formation, however, of such layers, creates a lot of technical and technological problems. The aim of this paper is to present the technological methods, that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are briefly described and their pros and cons are discussed.
Źródło:
Journal of Telecommunications and Information Technology; 2001, 1; 27-34
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characteristics of Carbon Films Deposited by Magnetron Sputtering
Autorzy:
Mróz, W.
Burdyńska, S.
Prokopiuk, A.
Jedyński, M.
Budner, B.
Korwin-Pawlowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807558.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Opis:
Carbon thin films are often called in the literature, "diamond-like carbon" films. They consist of two basic allotropic forms of carbon, which are graphite and diamond. Carbon atoms with $sp^{2}$ bonds form after deposition of a graphite-like phase. Atoms with $sp^{3}$ bonds form a diamond-like phase. Diamond-like crystallites are built into a graphite-like phase matrix. In this paper there are presented experimental results of deposition of carbon films by the magnetron sputtering method and the results of analysis of the surface and phase structures of the deposited films. The amorphous carbon films were deposited from graphite targets on 316L steel substrates. The films were deposited at room temperature, in vacuum. The deposition time was 3 h; the depositions were conducted at two different distances between the substrate and the magnetron target.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-120-S-122
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of the Dispersion of Electrical Parameters and Characteristics of FinFET Devices
Autorzy:
Malinowski, A.
Tomaszewski, D.
Łukasiak, L.
Jakubowski, A.
Sekine, M.
Hori, M.
Korwin-Pawlowski, M. L.
Powiązania:
https://bibliotekanauki.pl/articles/308253.pdf
Data publikacji:
2009
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
FinFET
line edge roughness
parameter variability
plasma etching
technology computer aided design (TCAD)
Opis:
Extensive numerical simulations of FinFET structures have been carried out using commercial TCAD tools. A series of plasma etching steps has been simulated for different process conditions in order to evaluate the influence of plasma pressure, composition and powering on the FinFET topography. Next, the most important geometric parameters of the FinFETs have been varied and the electrical characteristics have been calculated in order to evaluate the sensitivity of the FinFET electrical parameters on possible FinFET structure variability.
Źródło:
Journal of Telecommunications and Information Technology; 2009, 4; 45-50
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Capillary Microfluidic Sensor for Determining the Most Fertile Period in Cows
Autorzy:
Borecki, M.
Korwin-Pawlowski, M.
Bebłowska, M.
Szmidt, M.
Urbańska, K.
Kalenik, J.
Chudzian, Ł.
Szczepański, Z.
Kopczyński, K.
Jakubowski, A.
Szmidt, A.
Powiązania:
https://bibliotekanauki.pl/articles/1506725.pdf
Data publikacji:
2010-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.81.Pa
87.85.fk
47.35.Pq
07.05.Mh
Opis:
This paper presents a new method of optoelectronic determination of cow fertility, based on a microfluidic fiber-optic capillary sensor. The current state of the art of fiber-optic capillary sensors is discussed briefly along with aspects of instrumentation and applications. Unlike classical fiber-optic sensors which are based on changes in light propagation inside the fiber in response to external conditions, optical capillary sensors rely on changes of light transmission within capillaries filled with the liquid to be analyzed. This approach opens up interesting new possibilities for the application of capillary microfluidic sensors, while raising specific issues relating to their construction, materials and technology. The investigated sensor uses light switching forced by local heating in a capillary filled with bovine vaginal fluid. The dynamically recorded data were processed in an artificial neural network. We were able to observe changes in the cow's fertility cycle allowing us to identify when an individual cow was in the middle part of standing estrus which is most situated for insemination.
Źródło:
Acta Physica Polonica A; 2010, 118, 6; 1093-1099
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-6 z 6

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