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Wyszukujesz frazę "Korona, K." wg kryterium: Autor


Tytuł:
Raman Spectroscopy of $LiFePO_4$ and $Li_3V_2(PO_4)_3$ Prepared as Cathode Materials
Autorzy:
Ziółkowska, D.
Korona, K.
Kamińska, M.
Grzanka, E.
Andrzejczuk, M.
Wu, S.
Chen, M.
Powiązania:
https://bibliotekanauki.pl/articles/1493017.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Hv
82.80.Gk
82.47.Aa
Opis:
Structure of samples of lithium iron vanadium phosphates of different compositions were investigated by X-rays, electron microscopy and Raman spectroscopy. The investigated salts were mainly of olivine-like and NASICON-like structures. The X-ray diffraction and the Raman scattering show different crystalline structures, which is probably caused by difference between cores of the crystallites (probed by X-rays) and their shells (probed by the Raman scattering). Most of the Raman spectra were identified with previously published data, however in the samples with high vanadium concentration we have observed new, not reported earlier modes at 835 $cm^{-1}$ and 877 $cm^{-1}$, that we identified as oscillations related to $V_2O_7^{4-}$ or $VO_4^{3-}$ anions.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 973-975
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Coupling of LO Phonons to Excitons in GaN
Autorzy:
Wysmołek, A.
Łomiak, P.
Baranowski, J. M.
Pakuła, K.
Stępniewski, R.
Korona, K. P.
Grzegory, I.
Boćkowski, M.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1952430.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
63.20.Mt
71.55.Eq
Opis:
The photoluminescence of homoepitaxial and heteroepitaxial GaN layers is reported. It is shown that the coupling between LO phonons and neutral acceptor bound excitons is much stronger than the coupling between LO phonons and neutral donor bound excitons. In undoped homoepitaxial layer, in spite of that the no-phonon emission due to donor bound excitons is one order of magnitude stronger than the acceptor bound excitons emission, the predominant structure in the LO phonon replica of the excitonic spectrum is related to optical transitions involving acceptor bound excitons. Temperature studies showed that at higher temperature the LO phonon replica is related to free excitons.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 981-984
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoreflectance Measurements of InGaAs/GaAs Quantum Wells
Autorzy:
Tomaszewicz, T.
Korona, K. P.
Bożek, R.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1952324.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Bd
73.20.Dx
78.66.Fd
Opis:
Samples with InGaAs/GaAs quantum wells were grown by metallo-organic chemical vapour deposition in order to detect and analyze GaSb islands deposited on the surface. Results of photoreflectance measurements of quantum wells are reported. The correspondence between broadening of quantum well transition lines and GaSb structures has been observed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 965-968
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Efficient Emission from InAlGaAs Single Quantum Dots with Low Lattice Misfit and AlGaAs Indirect Bandgap Barrier
Autorzy:
Słupiński, T.
Korona, K.
Papierska, J.
Borysiuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1398581.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.22.-f
78.47.jd
Opis:
We report on molecular beam epitaxy growth and properties of rarely studied quaternary In_{0.4}(Al_{0.75}Ga_{0.25})_{0.6}As self-assembled quantum dots, which show strong and efficient emission of red light from single quantum dots. The increased yield is, among others, due to efficient energy transfer from indirect band-gap Al_{0.75}Ga_{0.25}As barriers. To maximize photon energy emitted from quantum dots, low In composition, x_{In} = 0.4 was applied, which also lowered the lattice misfit close to the limit of 2D/3D transition in the Stranski-Krastanov growth mode. Time-resolved micro-photoluminescence shows emission at 650-750 nm. Well-resolved single quantum dot photoluminescence lines (decay time of ≈ 1-2 ns) are observed despite a high concentration ≈ 3×10¹¹ cm¯² of quantum dots. We discuss this observation assuming newly a role of carriers or excitons diffusion/tunneling between quantum dots at high surface concentration of dots and a possible role of lattice disorder inside the dot on the exciton lifetime.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1229-1232
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Level Transient Spectroscopic Studies of MOCVD GaN Layers Grown on Sapphire
Autorzy:
Śliwiński, A. A.
Korona, K. P.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1952204.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.61.Ey
Opis:
The deep level transient spectroscopy of GaN heteroepitaxial layers grown on sapphire was studied. The samples were Mg doped during the growth. The as-grown material is n-type. It becomes p-type after annealing. The samples were measured in the temperature range from 77 K to 420 K. In n-type GaN, one peak (EG1) with activation energy 0.75 eV was detected. In p-type, at least three peaks were observed: AS1 at temperature about 300 K and AS2, AS3 at about 400 K. The dominating one is AS3. It has an activation energy about 1.1 eV.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 955-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
FFirst TSC and DLTS Measurements of Low Temperature GaAs
Autorzy:
Muszalski, J.
Babiński, A.
Korona, K. P.
Kamińska, E.
Piotrowska, A.
Kamińska, M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1891236.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.80.Ey
Opis:
The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 413-416
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Zmiany w fitocenozach łąkowych wywołane ograniczeniem lub zaniechaniem ich użytkowania
Autorzy:
Mlynarczyk, K.
Korona, A.
Marks, E.
Powiązania:
https://bibliotekanauki.pl/articles/799279.pdf
Data publikacji:
2001
Wydawca:
Szkoła Główna Gospodarstwa Wiejskiego w Warszawie. Wydawnictwo Szkoły Głównej Gospodarstwa Wiejskiego w Warszawie
Źródło:
Zeszyty Problemowe Postępów Nauk Rolniczych; 2001, 478
0084-5477
Pojawia się w:
Zeszyty Problemowe Postępów Nauk Rolniczych
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Mn-Related Defect Band in InP
Autorzy:
Macieja, B.
Korona, K. P.
Piersa, M.
Witowski, A. M.
Wasik, D.
Wysmołek, A.
Strzelecka, G.
Hruban, A.
Surma, B.
Palczewska, M.
Kamińska, M.
Twardowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2036033.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Ee
72.20.Jv
Opis:
Electron paramagnetic resonance, optical absorption, luminescence and electrical studies of InP highly doped with Mn were performed. Electron paramagnetic resonance revealed presence of manganese in Mn$\text{}^{2+}$(d$\text{}^{5}$) configuration. In optical absorption, systematic reduction of InP band gap was observed with increase in Mn content. This was correlated with increase in photoionization-type absorption band starting at 0.2 eV. Time-resolved photoluminescence measurements showed decrease in photoexcited carrier lifetime and shortening of donor-acceptor pair recombination time with increase in Mn content. Moreover, photoluminescence band was shifted to lower energies, similarly to optical band gap. In electrical transport two mechanisms of conductivity were observed. Valence band transport dominated at higher temperatures, above 160 K, and activation energy of free-hole concentration was determined as about 0.20 eV. At lower temperatures hopping conductivity, clearly related to Mn defect band, was present. All these results were consistent with assumption of creation of Mn-related defect-band at 0.2 eV above InP valence band. It was found that Mn centers responsible for this band were in configurations of either d$\text{}^{5}$ or d$\text{}^{5}$ plus a hole localized about 7Å around corresponding Mn core.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 637-642
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Optical Properties of Highly Non-stoichiometric GaAs
Autorzy:
Kurpiewski, A.
Korona, K.
Kamińska, M.
Palczewska, M.
Jagadish, C.
Williams, J.
Powiązania:
https://bibliotekanauki.pl/articles/1876991.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.90.+f
78.30.Er
Opis:
The studies of transport and optical properties of GaAs implanted with high arsenic doses were performed. As-implanted samples showed hopping conductivity and the exponential absorption tail in the near-IR region. Both effects were probably caused by the amorphization of implanted layer. Using EPR measurements it was found that arsenic antisite defect with high local strain field was created during implantation. Annealing of implanted layers at 600°C led to substantial removal of amorphization, decrease in absorption coefficient and hopping conductivity leading to resistive samples. The possible model of such behaviour may be similar to the one of suggested for low temperature GaAs layers.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 518-522
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Wpływ obróbki cieplnej na barwę i właściwości antyoksydacyjne róż i łodygi brokułu
Influence of heat treatment on colour and antioxidante properties of broccoli florets and stalk
Autorzy:
Kozlowicz, K.
Goral, D.
Kluza, F.
Jablonska-Rys, E.
Zalewska-Korona, M.
Wojtowicz, A.
Goral, M.
Powiązania:
https://bibliotekanauki.pl/articles/805988.pdf
Data publikacji:
2017
Wydawca:
Szkoła Główna Gospodarstwa Wiejskiego w Warszawie. Wydawnictwo Szkoły Głównej Gospodarstwa Wiejskiego w Warszawie
Opis:
Celem badań było określenie wpływu blanszowania, zamrażania oraz liofilizacji na zawartość związków fenolowych, właściwości antyoksydacyjne i barwę róż brokułu z uwzględnieniem łodygi jako części użytkowej. W badanym surowcu oznaczono zawartość wody, całkowitą zawartość związków fenolowych, właściwości przeciwutleniające (DPPH) oraz wartość siły redukującej i zdolność redukowania jonów żelaza (FRAP). Barwę mierzono w systemie CIE – L*a*b*. Stwierdzono, że zawartość związków fenolowych w różach i w łodydze brokułu oraz aktywność przeciwutleniająca ulegają zmniejszeniu w wyniku blanszowania oraz procesu zamrażania. Blanszowanie oraz zamrażanie róż brokułu powodują istotne zmiany w ich barwie. W przypadku łodygi, zarówno rdzenia, jak i perydermy, nie zaobserwowano istotnych statystycznie zmian w różnicy barwy i jej nasyceniu w wyniku blanszowania, zamrażania i liofilizacji. Biorąc pod uwagę otrzymane wyniki stwierdzono, że łodyga brokułu może stanowić cenne źródło związków fenolowych.
Broccoli (Brassica oleracea L. var Italica) belonges to cruciferous family and is popular for their appealing colour, flavor and texture. Broccoli is rich in health-promoting compounds such as ascorbic acid, tocopherol, β-carotene, polyphenols, glucosinolate, flavonoids and selenium. These compounds are known to provide different degree of protection against cancer and cardiovascular diseases. However, fresh broccoli has a limited shelf-life. It is well known that freezing is one of the most efficient methods to preserve perishable fruits and vegetables. The aim of this research was to evaluate how blanching, freezing and freeze-drying impact on the contents of phenolic compounds, antioxidant properties and colour of broccoli florets and stalk. Broccoli florets and stalk were blanched in water or vapor, frozen and lyophilized. Water content in samples was determined according to AOAC. Samples were freeze-dried (Christ LOC-1m firmy ALPHA 2-4 L D plus) at the pressure 20Pa. The total phenolic content was determined according to the Folin-Ciocalteu procedure and calculated as gallic acid equivalents (GAE). Free radical scavenging activity was determined using the DPPH method in ethanol extracts. The reducing power of the extracts was measured by the ferric reducing/antioxidant power (FRAP) technique. The colour was measured in the CIE Lab system with the calculation of colour difference and change in saturation of colour. The results showed that the broccoli florets were characterised by higher content of phenolic compounds and higher antioxidant activity than the broccoli stalk. The content of phenolic compounds in fresh florets came to 198.12 mg/100 g sample, and in fresh stalk 92.70 mg/100 g sample. The blanching in water or vapor and then freezing significantly increased the content of phenolic compounds and reduced antioxidant properties of both florets and stalk. The blanching and freezing of broccoli florets cause a significant decrease in colour brightness, an increase in the proportion of green and yellow. In the case of stalk, both its core and periderm, blanching and freezing did not significant affect the value of the L* parameter and the a* chromaticity coefficient. There were no significantly changes in color and difference in saturation between fresh broccoli floret and stalk and after its freeze-drying. It has been shown that the stalk is a valuable source of important nutritionally ingredients and can be used in food processing.
Źródło:
Zeszyty Problemowe Postępów Nauk Rolniczych; 2017, 590
0084-5477
Pojawia się w:
Zeszyty Problemowe Postępów Nauk Rolniczych
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High-performance FPGA Architecture for Data Streams Processing on Example of IPsec Gateway
Autorzy:
Korona, M.
Skowron, K.
Trzepinski, M.
Rawski, M.
Powiązania:
https://bibliotekanauki.pl/articles/227331.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
IPsec
FPGA
hardware implementation
data stream processing
Opis:
In modern digital world, there is a strong demand for efficient data streams processing methods. One of application areas is cybersecurity - IPsec is a suite of protocols that adds security to communication at the IP level. This paper presents principles of high-performance FPGA architecture for data streams processing on example of IPsec gateway implementation. Efficiency of the proposed solution allows to use it in networks with data rates of several Gbit/s.
Źródło:
International Journal of Electronics and Telecommunications; 2018, 64, 3; 351-356
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Arsenic Antisite Defects Correlations in Low Temperature MBE GaAs
Autorzy:
Korona, K. P.
Powiązania:
https://bibliotekanauki.pl/articles/1933702.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Yg
73.61.Ey
Opis:
GaAs layers grown by molecular beam epitaxy at low temperatures (LT GaAs) have several interesting properties. For example, concentrations up to 2 × 10$\text{}^{20}$ cm$\text{}^{-3}$ of neutral and up to 5 × 10$\text{}^{18}$ cm$\text{}^{-3}$ of positively charged As$\text{}_{Ga}$defects have been determined in as grown layers. It has been observed that electrical transport in LT GaAs is dominated by hopping conductivity. In the as grown and annealed up to 400°C layers, experiments show a high mobility of photo-excited electrons up to 20000cm$\text{}^{2}$/(V s) at about 130 K. Taking into account the very high concentration of ionized defects in LT GaAs, the best possible explanation of the measured value of mobility is an assumption that As$\text{}_{Ga}^{+}$ defects interact with ionized acceptors A¯. This leads to creation of As$\text{}_{Ga}^{+}$-A¯ dipoles, which do not scatter electrons as efficiently as single ions. It has been shown that the donor-acceptor correlation could be destroyed by illumination whichv. Also analysis of hopping conductivity suggests the existence of the donor-acceptor correlations in non-illuminated LT GaAs. Numerical calculation of As$\text{}_{Ga}$-acceptors interaction has been done. It shows that at least below 200 K dipole formation in LT GaAs is possible and could lead to observed increase in mobility.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 643-653
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Defects in Low-Temperature GaAs
Autorzy:
Korona, K. P.
Muszalski, J.
Kamińska, M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1923822.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.80.Ey
Opis:
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 821-824
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dielectric Function Theory Calculations of Polaritons in GaN
Autorzy:
Korona, K. P.
Stępniewski, R. Stępniewski
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1968249.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
71.36.+c
Opis:
Properties of polaritons (free excitons coupled with photons of similar energy) in gallium nitride are investigated by performing calculations based on dielectric function theory including all three excitons A, B and C (characteristic for the wurtzite structure). Moreover the excited states of excitons have been taken into account by adding Elliott's components to dielectric function. Energies, polarizabilities and damping constants of excitons are determined. It is shown that due to inter-exciton interactions the B and C excitons are strongly damped. It is estimated that the characteristic time of B to A relaxation is t$\text{}_{BA}$=1 ps. The exciton C lifetime is estimated τ$\text{}_{C}$=0.2 ps.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 867-870
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System
Autorzy:
Korona, K. P.
Babiński, A.
Raymond, S.
Wasilewski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/2046919.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
72.20.Jv
78.67.Hc
78.55.Cr
Opis:
We present time-resolved photoluminescence investigations of InAs/GaAs structures containing quantum dots with the ground state at 1.43 eV. State filling effect and a Pauli blocking effect were clearly observed. These effects significantly influenced dynamics of excitation transfer from upper to lower state inside a dot leading to non-exponential dynamics. Numerical model based on nonlinear rate equations was proposed. The model described well the experimental data providing values of: lifetime of the ground state 0.53±0.03 ns, lifetime of excited state (when the ground state is full) 1.1±0.2 ns, and internal relaxation time (when the ground state is empty) 0.07±0.01 ns.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 219-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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