- Tytuł:
- TiAl-based Ohmic Contacts to p-type 4H-SiC
- Autorzy:
-
Martychowiec, Agnieszka
Kwietniewski, Norbert
Kondracka, Kinga
Werbowy, Aleksander
Sochacki, Mariusz - Powiązania:
- https://bibliotekanauki.pl/articles/1844507.pdf
- Data publikacji:
- 2021
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
ohmic contact
SiC
silicon carbide
TiAl - Opis:
- This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800°C - 1100°C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts demonstrated structures with Al layer thickness equal or greater than that of Ti layer and annealed at temperatures of 1000°C or higher.
- Źródło:
-
International Journal of Electronics and Telecommunications; 2021, 67, 3; 459-463
2300-1933 - Pojawia się w:
- International Journal of Electronics and Telecommunications
- Dostawca treści:
- Biblioteka Nauki
Artykuł