- Tytuł:
- Chemical Composition of Native Oxide Layers on $In^{+}$ Implanted and Thermally Annealed GaAs
- Autorzy:
-
Kulik, M.
Kołodyńska, D.
Żuk, J.
Komarov, F.
Filiks, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1400486.pdf
- Data publikacji:
- 2013-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.uj
79.60.-i
82.80.Yc - Opis:
- Semi-insulating GaAs wafers have been implanted with 250 keV In^{+} ions at a fluence of $3 \times 10^{16} cm^{-2}$. The samples prepared in this way were subsequently annealed at a temperature of 600°C or 800°C for 2 h. Thicknesses of the native oxide layers on implanted GaAs after samples storage in air were evaluated using the Rutherford backscattering spectrometry with the nuclear reaction $O^{16}(α,α)O^{16}$ method. The chemical composition of native oxide layers on $In^{+}$ implanted and annealed GaAs has been studied using X-ray photoelectron spectroscopy. $As_{2}O_{3}$, $As_{2}O_{5}$, $Ga_{2}O_{3}$, $GaAs$, $InAs$ and $InAsO_4$ compounds were detected in these layers.
- Źródło:
-
Acta Physica Polonica A; 2013, 123, 5; 943-947
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł