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Wyświetlanie 1-5 z 5
Tytuł:
The influence of thermal modification in oil on the selected chemical components content in beech wood (Fagus sylvatica L.)
Wpływ modyfikacji termicznej w oleju na zawartość wybranych substancji chemicznych w drewnie buka zwyczajnego (Fagus sylvatica L.)
Autorzy:
Gawron, J.
Klosinska, T.
Zawadzki, J.
Archanowicz, E.
Kolek, L.
Powiązania:
https://bibliotekanauki.pl/articles/9276.pdf
Data publikacji:
2013
Wydawca:
Szkoła Główna Gospodarstwa Wiejskiego w Warszawie. Wydawnictwo Szkoły Głównej Gospodarstwa Wiejskiego w Warszawie
Źródło:
Annals of Warsaw University of Life Sciences - SGGW. Forestry and Wood Technology; 2013, 82
1898-5912
Pojawia się w:
Annals of Warsaw University of Life Sciences - SGGW. Forestry and Wood Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of Phase Diagram and Glass Transitions of a Liquid Crystal with Ferro- and Antiferroelectric Phases
Autorzy:
Kolek, Ł.
Massalska-Arodź, M.
Majda, D.
Suchodolska, B.
Zalewski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1399005.pdf
Data publikacji:
2013-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.70.kj
64.70.mj
64.70.pp
Opis:
Based on the results of the differential scanning calorimetry, of transmitted light intensity measurements and of texture observations the phase diagram of 4-(6-heptafluorobutanoiloxyhexyloxy)biphenyl-4'-carboxylate(S)-4-(methyloheptyloxy-1-carbonyl)-phenyl (4H6) was obtained. The following phases were identified on cooling: isotropic, smectic A, smectic C*, smectic $C_{A}^\ast $ phases and a highly ordered phase called SmX and its glass. During heating transformation from glass of SmX to SmX phase and then transition to a metastable Cr2 phase, evolving to the more stable Cr1 phase, were observed. On further heating $ SmC_{A}^\ast $, SmC* and Sm phases were identified. When Cr2 was cooled, a glass transition was also observed.
Źródło:
Acta Physica Polonica A; 2013, 124, 6; 909-912
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of Phase Diagram of a Liquid Crystal with 4-[2-(3-Fluorophenyl)ethyl]biphenyl Core of Molecules
Autorzy:
Kolek, Ł.
Massalska-Arodź, M.
Majda, D.
Wantusiak, B.
Zalewski, S.
Kula, P.
Powiązania:
https://bibliotekanauki.pl/articles/1419572.pdf
Data publikacji:
2012-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.70.M-
62.20.Jk
Opis:
Basing on the results of differential scanning calorimetry and transmitted light intensity methods and texture observations in the temperature range from - 50C to 90C phase diagram of 1-[3-fluoro-4-(1-methylheptyloxycarbonyl)phenyl]-2-[4'-(2,2,3,3,4,4,4-heptafluorobutoxybutoxy)biphenyl-4-yl]ethane was established. Monotropic system of thermodynamic phases was found. On cooling the isotropic phase transforms at 85C to ferroelectric SmC* phase and further two liquid crystalline phases, antiferroelectric $SmC*_{A}$ and SmI, and a metastable crystal Cr2 reveal. During heating exothermic anomaly in the wide temperature range was observed and ascribed to evolution of Cr2 to the stable crystal Cr1. On further heating both $SmC*_{A}$ and SmC* phases were observed. Thermodynamic parameters were calculated for all phase transitions. During rapid cooling (10 K/min) vitrification of metastable Cr2 crystal at $T_{g}$ = - 115C was registered.
Źródło:
Acta Physica Polonica A; 2012, 122, 2; 370-374
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Four-point probe resistivity noise measurements of GaSb layers
Autorzy:
Ciura, L.
Kolek, A.
Smoczyński, D.
Jasik, A.
Powiązania:
https://bibliotekanauki.pl/articles/201503.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
low frequency noise
GaSb noise
noise measurements
resistance noise calculation
Opis:
This paper concerns measurements and calculations of low frequency noise for semiconductor layers with four-probe electrodes. The measurements setup for the voltage noise cross-correlation method is described. The gain calculations for local resistance noise are performed to evaluate the contribution to total noise from different areas of the layer. It was shown, through numerical calculations and noise measurements, that in four-point probe specimens, with separated current and voltage terminals, the non-resistance noise of the contact and the resistance noise of the layer can be identified. The four-point probe method is used to find the low frequency resistance noise of the GaSb layer with a different doping type. For n-type and p-type GaSb layers with low carrier concentrations, the measured noise is dominated by the non-resistance noise contributions from contacts. Low frequency resistance noise was identified in high-doped GaSb layers (both types). At room temperature, such resistance noise in an n-type GaSb layer is significantly larger than for p-type GaSb with comparable doping concentration.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 1; 135-140
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Measurements of low frequency noise of infrared photo-detectors with transimpedance detection system
Autorzy:
Ciura, Ł.
Kolek, A.
Gawron, W.
Kowalewski, A.
Stanaszek, D.
Powiązania:
https://bibliotekanauki.pl/articles/221094.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
1/f noise
infrared detectors
nBn structure
HgCdTe heterostructures
noise measurements
transimpedance detection system
type II InAs/GaSb superlattice
Opis:
The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT) heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.
Źródło:
Metrology and Measurement Systems; 2014, 21, 3; 461-472
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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