Autor: Karimov, Kh. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Fabrication and Investigation of the Charge/Discharge Characteristics of Zinc/PVA-KOH/Carbon Cell
Autorzy:: Saleem, M.
Sayyad, M.
Karimov, Kh
Ahmad, Z.
Powiązania:: https://bibliotekanauki.pl/articles/1585039.pdf
Data publikacji:: 2009-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 65.40.gk
82.47.Jk
84.60.-h
Opis:: Electrochemical properties of a zinc/polyvinyl alcohol-potassium hydroxide/carbon cell have been investigated. In this cell, PVA-KOH gel has been used as an electrolyte with PVA/KOH wt.% ratio of 60:40, while zinc and carbon rods served as electrodes. The cylindrical glass vessel of length 3.0 cm and of diameter 2.0 cm has been used as a cell compartment. The current-voltage characteristics and open circuit voltage-time, charge voltage/current-time and discharge voltage/current-time studies have been done. The open circuit voltage has been observed for 160 h. It has been found that the cell shows stability and is rechargeable, too.
Źródło:: Acta Physica Polonica A; 2009, 116, 6; 1021-1024
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Frequency Dependent Electrical Characteristics οf Au/n-Si/CuPc/Au Heterojunction
Autorzy:: Ahmad, Z.
Sayyad, M.
Karimov, Kh.
Saleem, M.
Shah, M.
Powiązania:: https://bibliotekanauki.pl/articles/1538707.pdf
Data publikacji:: 2010-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.Jv
73.90.+f
Opis:: Electrical characteristics of the heterojunction fabricated by thermal deposition of copper phthalocyanine (CuPc) on an n-silicon substrate have been investigated. The frequency has significant effect on capacitance (C), conductance (G) and series resistance $(R_{s})$ interface states $(D_{it})$ of the junction. Measured capacitance and conductance were corrected for $R_{s}$. The conductance technique was used to measure the density of the interface states. This method revealed the value of the interface state density distribution for the Au/n-Si/CuPc/Au interfaces of the order of $10^{12} cm^{-2} eV^{-1}$.
Źródło:: Acta Physica Polonica A; 2010, 117, 3; 493-496
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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