- Tytuł:
- Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures
- Autorzy:
-
Požela, J.
Požela, K.
Sužiedėlis, A.
Jucienė, V.
Petkun, V. - Powiązania:
- https://bibliotekanauki.pl/articles/1813388.pdf
- Data publikacji:
- 2008-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.10.Di
73.21.Fg
73.40.Kp - Opis:
- A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the electron saturated drift velocity in the $Al_{0.2}Ga_{0.8}As$/GaAs/$Al_{0.2}Ga_{0.8}As$ high electron mobility transistor channel is envisaged theoretically and observed experimentally. The drift velocity in the channel in high electric fields (E >10 kV/cm) exceeded the maximal drift velocity in bulk GaAs $(v_\text{max}=10^7 cm/s)$ and achieved the value of $4×10^7$ cm/s.
- Źródło:
-
Acta Physica Polonica A; 2008, 113, 3; 989-992
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł