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    Wyświetlanie 1-3 z 3
    Tytuł:
    Dynamics of slope processes under changing land use conditions in young morainic landscapes, Western Lithuania
    Autorzy:
    Jarasiunas, G.
    Switoniak, M.
    Kinderiene, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/2082675.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Instytut Agrofizyki PAN
    Tematy:
    soil erosion
    surface runoff
    young glacial landscapes
    colluvial soils
    crop rotation
    Opis:
    The long-term field study (1995-2012) concerning soil erosion was conducted on an experimental slope-plot situated on a moraine hilly agricultural landscape of the southerncentral Zemaiciai Uplands, Lithuania. The aim of the presented studies is to determine changes in the volume of soil loss under typical field crop rotation conditions with bare fallow and to estimate the impact of erosion on soil properties. Surface runoff and soil loss rates were measured on a bounded runoff plot draining to a collector tank that trapped both sediments and water. Changes in precipitation, rain intensity and land use substantially affected the rate of the erosion processes. It was found through a comparison of three-crop rotation periods that the highest intensity of slope soil transfer occurred during the time period of 2007-2012 (3rd crop rotation) due to extreme rainfall events. Developing the dynamics of vegetation cover to prevent soil erosion phenomena showed a significant difference in plant growth conditions and the suitability of various plants for soil protection. The lowest ratio of soil loss was measured on a hillslope covered by perennial grasses. The years characterized by the highest erosion rates were associated with bare fallow land use when soil losses were even 470 times higher than under perennial grasses.
    Źródło:
    International Agrophysics; 2020, 34, 1; 43-55
    0236-8722
    Pojawia się w:
    International Agrophysics
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transients of Carrier Recombination and Diffusion in Highly Excited GaN Studied by Photoluminescence and Four-Wave Mixing Techniques
    Autorzy:
    Juršėnas, S.
    Miasojedovas, S.
    Kurilčik, G.
    Žukauskas, A.
    Aleksiejūnas, R.
    Malinauskas, T.
    Sūdžius, M.
    Jarašiūnas, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041739.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.Ey
    72.20.Jv
    78.55.Cr
    Opis:
    Time-resolved photoluminescence and four-wave mixing techniques have been combined for studies of carrier relaxation dynamics in a highly photoexcited GaN epilayer. For a moderate excitation density below 1 mJ/cm$\text{}^{2}$, carrier recombination was due to free carrier capture by deep traps. The characteristic time of carrier capture,τ$\text{}_{e}$=550 ps, was measured under deep trap saturation regime. The ambipolar diffusion coefficient for free carriers, D=1.7 cm$\text{}^{2}$/s, was estimated from the analysis of the transients of the light-induced gratings of various periods. A complete saturation of the four-wave mixing efficiency was observed for the excitation energy density exceeding 1.5 mJ/cm$\text{}^{2}$. The latter saturation effect was shown to be related to electron-hole plasma degeneration, which results in a significant enhancement of carrier recombination rate due to onset of stimulated emission.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 240-244
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of Optical and Photoelectrical Properties of ZnO Crystals
    Autorzy:
    Onufrijevs, P.
    Serevičius, T.
    Scajev, P.
    Manolis, G.
    Medvids, A.
    Chernyak, L.
    Kuokstis, E.
    Yang, C.
    Jarasiunas, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506285.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.15.+e
    78.45.+h
    78.30.Fs
    Opis:
    We characterized optical and photoelectrical properties of undoped and Ga-doped ZnO layers differently grown on sapphire substrates by using complementary optical methods. Different stimulated emission threshold values for ZnO epitaxial layers grown by pulsed laser deposition and MBE methods were attributed to crystalline quality of the layers and the growth method used. Different carrier lifetimes in various ZnO epitaxial layers are explained by defect-related and intrinsic mechanisms of recombination.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 274-276
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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