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    Wyświetlanie 1-8 z 8
    Tytuł:
    A new method for identifying outlying subsets of data
    Autorzy:
    Zalewska, M.
    Grzanka, A.
    Niemiro, W.
    Samoliński, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/970610.pdf
    Data publikacji:
    2008
    Wydawca:
    Polska Akademia Nauk. Instytut Badań Systemowych PAN
    Tematy:
    misclassification error
    discriminant analysis
    multidimensional homogeneity test
    medical data
    Opis:
    In various branches of science, e.g. medicine, economics, sociology, it is necessary to identify or detect outlying subsets of data. Suppose that the set of data is partitioned into many relatively small subsets and we have some reason to suspect that one or several of these subsets may be atypical or aberrant. We propose applying a new measure of separability, based on the ideas borrowed from the discriminant analysis. In our paper we define two versions of this measure, both using a jacknife, leave-one-out, estimator of classification error. If a suspected subset is significantly well separated from the main bulk of data, then we regard it as outlying. The usefulness of our algorithm is illustrated on a set of medical data collected in a large survey "Epidemiology of Allergic Diseases in Poland" (ECAP). We also tested our method on artificial data sets and on the classical IRIS data set. For a comparison, we report the results of a homogeneity test of Bartoszyński, Pearl and Lawrence, applied to the same data sets.
    Źródło:
    Control and Cybernetics; 2008, 37, 3; 693-709
    0324-8569
    Pojawia się w:
    Control and Cybernetics
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interplay between Internal and External Electric Field Studied by Photoluminescence in InGaN/GaN Light Emitting Diodes
    Autorzy:
    Staszczak, G.
    Khachapuridze, A.
    Grzanka, S.
    Czernecki, R.
    Piotrzkowski, R.
    Perlin, P.
    Suski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492901.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.60.Fi
    78.67.De
    85.60.Bt
    85.60.Jb
    Opis:
    We have studied a series of polar InGaN/GaN light emitting diodes, consisting of either a blue (440-450 nm) quantum well, or combination of blue and violet (410 nm) quantum wells (with indium content 18% and 10%, respectively). The blue quantum well was always placed close to p-type region of the particular LED. We found that the electroluminescence induced by low current is characterized by light emission from the blue quantum well only. In comparison, optical excitation of our LEDs leads to light emission with energies characteristic either for blue and/or violet quantum wells. The corresponding microphotoluminescence spectra evolve depending on external polarization and variable light intensity of excitation supplied by He-Cd laser. Interplay between built-in electric field and externally applied polarization/screening decides about the band structure profiles and thus radiative recombination mechanisms.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 891-893
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM
    Autorzy:
    Ivaldi, F.
    Kret, S.
    Szczepańska, A.
    Czernecki, R.
    Kryśko, M.
    Grzanka, S.
    Leszczyński, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048084.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.bg
    68.37.Lp
    68.65.Fg
    Opis:
    Two samples containing InGaN quantum wells have been grown by metal-organic vapor phase epitaxy on high pressure grown monocrystalline GaN (0001). Different growth temperatures have been used to grow the wells and the barriers. In one of the samples, a low temperature GaN layer (730°C) has been grown on every quantum well before rising the temperature to standard values (900°C). The samples have been investigated by transmission electron microscopy and X-ray diffraction. Photoluminescence spectra have been measured as well. The influence of the LT-GaN has been investigated in regard to its influence on the structural and compositional quality of the sample.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 660-662
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Physical Properties of SiC-GaAs Nano-Composites
    Autorzy:
    Kalisz, G.
    Grzanka, E.
    Wasik, D.
    Świderska-Środa, A.
    Gierlotka, S.
    Borysiuk, J.
    Kamińska, M.
    Twardowski, A.
    Pałosz, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043724.pdf
    Data publikacji:
    2005-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.-b
    07.35.+k
    Opis:
    Nano-composites consisting of primary phase of hard nanocrystalline SiC matrix and the secondary nanocrystalline semiconductor (GaAs) phase were obtained by high-pressure zone infiltration. The synthesis process occurs in three stages: (i) at room temperature the nanopowder of SiC is compacted along with GaAs under high pressure up to 8 GPa, (ii) the temperature is increased above the melting point of GaAs up to 1600~K and, the pores are being filled with liquid, (iii) upon cooling GaAs nanocrystallites grow in the pores. Synthesis of nano-composites was performed using a toroid-type high-pressure apparatus (IHPP of the Polish Academy of Sciences, Warsaw) and six-anvil cubic press (MAX-80 at HASYLAB, Hamburg). X-ray diffraction studies were performed using a laboratory D5000 Siemens diffractometer. Phase composition, grain size, and macrostrains present in the synthesized materials were examined. Microstructure of the composites was characterized using scanning electron microscopy and high resolution transmission electron microscopy. Far-infrared reflectivity measurements were used to determine built-in strain.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 4; 717-721
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration
    Autorzy:
    Grzanka, S.
    Łuka, G.
    Krajewski, T. A.
    Guziewicz, E.
    Jachymek, R.
    Purgal, W.
    Wiśniewska, R.
    Sarzyńska, A.
    Bering-Staniszewska, A.
    Godlewski, M.
    Perlin, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048094.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.Ey
    73.40.Kp
    73.40.Lq
    Opis:
    Fabrication of low resistivity ohmic contacts to N polarity gallium nitride crystal is an important issue for the construction of the vertical current flow devices like laser diodes and high brightness light emitting diodes. Gallium nitride is a challenging material because of the high metal work function required to form a barrier-free metal-semiconductor interface. In practice, all useful ohmic contacts to GaN are based on the tunneling effect. Efficient tunneling requires high doping of the material. The most challenging task is to fabricate high quality metal ohmic contacts on the substrate because the doping control is here much more difficult that in the case of epitaxial layers. In the present work we propose a method for fabricating low resistivity ohmic contacts on N-side of GaN wafers grown by hydride vapor phase epitaxy. These crystals were characterized by a n-type conductivity and the electron concentration of the order of 10$\text{}^{17}$ cm$\text{}^{-3}$. The standard Ti/Au contact turned out to be unsatisfactory with respect to its linearity and resistance. Instead we decided to deposit high-n type ZnO layers (thickness 50 nm and 100 nm) prepared by atomic layer deposition at temperature of 200°C. The layers were highly n-type conductive with the electron concentration in the order of 10$\text{}^{20}$ cm$\text{}^{-3}$. Afterwards, the metal contact to ZnO was formed by depositing Ti and Au. The electrical characterization of such a contact showed very good linearity and as low resistance as 1.6 × 10$\text{}^{-3}$ Ω cm$\text{}^{2}$. The results indicate advantageous properties of contacts formed by the combination of the atomic layer deposition and hydride vapor phase epitaxy technology.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 672-674
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Power Continuous Wave Blue InAlGaN Laser Diodes Made by Plasma Assisted MBE
    Autorzy:
    Skierbiszewski, C.
    Siekacz, M.
    Wiśniewski, P.
    Perlin, P.
    Feduniewicz-Żmuda, A.
    Cywiński, G.
    Smalc, J.
    Grzanka, S.
    Grzegory, I.
    Leszczyński, M.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047002.pdf
    Data publikacji:
    2006-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.35.Be
    42.60.By
    73.21.Cd
    Opis:
    Room temperature, continuous wave operation of InGaN multi-quantum wells laser diodes made by rf plasma assisted molecular beam epitaxy at 411 nm wavelength is demonstrated. The threshold current density and voltage were 4.2 kA/cm$\text{}^{2}$ and 5.3 V, respectively. High optical power output of 60 mW was achieved. The lifetime of these laser diodes exceeds 5 h with 2 mW of optical output power. The laser diodes are fabricated on low dislocation density bulk GaN substrates, at growth conditions which resembles liquid phase epitaxy. We demonstrate that relatively low growth temperatures (600-700°C) pose no intrinsic limitations for fabrication of nitride optoelectronic components by plasma assisted molecular beam epitaxy.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 3; 345-351
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm
    Autorzy:
    Cywiński, G.
    Skierbiszewski, C.
    Feduniewicz-Żmuda, A.
    Siekacz, M.
    Nevou, L.
    Doyennette, L.
    Julien, F. H.
    Prystawko, P.
    Kryśko, M.
    Grzanka, S.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046911.pdf
    Data publikacji:
    2006-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.Fg
    78.66.-w
    78.67.De
    78.40.Fy
    81.15.Hi
    Opis:
    Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 2; 175-181
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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