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    Wyświetlanie 1-4 z 4
    Tytuł:
    Post-implantation defects instability under 1 MeV electron irradiation in GaAs
    Autorzy:
    Warchoł, S.
    Rzewuski, H.
    Krynicki, J.
    Grötzschel, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/146724.pdf
    Data publikacji:
    2000
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    electron annealing
    GaAs
    implantation
    Opis:
    The influence of 1 MeV electron irradiation on the stability of post-implantation defects in GaAs has been investigated. The n-type GaAs wafers of <100> orientation were implanted with 150 keV As+ ions below the amorphization threshold at RT using the implantation dose of 2×1013 ions cm–2 at a constant flux of 0.1 žA cm–2. Then the implanted samples were irradiated with a scanned beam of 1 MeV electrons from a Van de Graaff accelerator in a dose range (0.5–5.0)×1017 cm–2 at 320 K. RBS and channeling spectroscopy of 1.7 MeV 4He+ ions were used to determine the depth distribution of defect concentration before and after 1 MeV irradiations. New results of an "oscillatory" behaviour of the damage level as a function of 1 MeV electron fluence are presented.
    Źródło:
    Nukleonika; 2000, 45, 4; 225-228
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Angular dependence of post-implantation damage recovery under 1 MeV electron irradiation in GaAs
    Autorzy:
    Warchoł, S.
    Rzewuski, H.
    Krynicki, J.
    Grotzschel, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/147146.pdf
    Data publikacji:
    2002
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    electron annealing
    GaAs
    implantation
    Opis:
    The angular dependence of post-implantation defects removal in GaAs irradiated with 1 MeV electrons from a Van de Graaff accelerator has been investigated. The possible way of enhancing defect annealing consists in ionization created by electron irradiation. In this paper new results of a damage level behaviour dependent on 1 MeV electron beam angle irradiation are presented. GaAs single crystals of <100> orientation were implanted with 150 keV As+ ions at RT and then irradiated with a scanning beam of 1 MeV electrons at some selected angles. Rutheford Backscattering Spectroscopy (RBS) of 1.7 MeV 4He+ ions were used to determine the depth distribution of defect concentration before and after electron irradiation. The results relate clearly the ionization intensity created by the electron beam with angle of incidence with respect to the GaAs <100> orientation.
    Źródło:
    Nukleonika; 2002, 47, 1; 19-21
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Lattice Deformation in Al$\text{}_{x}$Ga$\text{}_{1-x}$As Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions
    Autorzy:
    Wieteska, K.
    Wierzchowski, W.
    Graeff, W.
    Turos, A.
    Grötzschel, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/2011027.pdf
    Data publikacji:
    1999-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.-i
    61.80.-x
    Opis:
    A series of highly perfect Al$\text{}_{0.45}$Ga$\text{}_{0.55}$ As epitaxial layers implanted with 1 MeV Si ions to the doses in a range 7×10$\text{}^{13}$-2×10$\text{}^{15}$ ions/cm$\text{}^{2}$ were studied with various conventional and synchrotron X-ray diffraction methods. The presently used methods allowed both the measurement of lattice parameter changes and strain induced deformation. The evaluation of complete strain profiles was also performed by numerical simulation of diffraction curves. It was found that the implantation induced considerable change of lattice parameter reached the maximum at the dose 3×10$\text{}^{14}$ ions/cm$\text{}^{2}$. The recorded curves proved also that the lattice parameter is almost constant in the near surface region of the implanted layers. The applied doses did not cause lattice amorphisation at room temperature.
    Źródło:
    Acta Physica Polonica A; 1999, 96, 2; 289-293
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrode erosion mechanism in the rod plasma injector type of generator as deduced from the structure of irradiated substrates
    Autorzy:
    Piekoszewski, J.
    Stanisławski, J.
    Grotzschel, R.
    Matz, W.
    Jagielski, J.
    Szymczyk, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/147032.pdf
    Data publikacji:
    2002
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    plasma alloying
    plasma melting
    vapor ionization
    Opis:
    Titanium atoms were alloyed into a polycrystalline alundum substrate using a various number of intense pulses consisting of plasma of the working gas and vapor and low energy ions of Ti eroded from electrodes of the rod plasma injector type generator. It appears that at a single pulse titanium always forms a thin metallic film not mixed with the substrate material. With increasing number of pulses the amount of titanium atoms mixed into the substrate increases, whereas the thickness of the film - decreases. Analyses of phase composition and of structural properties, as well as computer simulations of thermal evolution brought the present authors to the conclusion that increase of number of pulses leads to decrease of melting temperature of the top layer of the substrate. It has also been confirmed that metallic ions eroded from electrodes do not undergo such acceleration like working gas ions do; their energy remains on the 200-300 eV level. It is concluded that erosion of the electrode material occurs during the last phase of the discharge via the vacuum arc mechanism.
    Źródło:
    Nukleonika; 2002, 47, 3; 113-117
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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