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Wyświetlanie 1-15 z 53
Tytuł:
Fermi-Edge Singularity in Luminescence Spectra of P-Type Modulation Doped AlGaAs/GaAs Quantum Wells
Autorzy:
Bugajski, M.
Godlewski, M.
Regiński, K.
Holtz, P. O.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1969046.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
73.20.Dx
Opis:
We have studied an enhancement of the oscillator strength for optical transitions near the Fermi energy in p-type modulation-doped quantum wells, which, so far, deserved much less attention than analogous n-type systems, because of the complicated valence band structure involved. The relatively wide (L=150 Å) quantum wells and high doping levels were used, containing more than one occupied subband. The enhancement in the photoluminescence intensity at the Fermi energy resulted from the strong correlation and multiple scattering of holes near the Fermi edge by the localized electrons.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 265-270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An analysis of solar energy conversion systems based on photon and thermal processes
Autorzy:
Fieducik, J.
Godlewski, J.
Powiązania:
https://bibliotekanauki.pl/articles/184520.pdf
Data publikacji:
2016
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
Tematy:
energy conversion
photoelectric effect
thermoelectric process
thermionic emission process
Opis:
Solar spectral irradiance covers a fairly broad wavelength range. Solar radiation is part of the electromagnetic spectrum which is described by the concept of wave-particle duality. The corpuscular theory of electromagnetic radiation states that energy is transmitted by photons. Photons carry specific amounts of energy which can be used to convert solar energy into other types of energy, in particular electricity. The internal photoelectric effect is important for the conversion of solar energy to electricity because the efficiency of the external photoelectric effect is too low. Every quantum of solar energy also carries a certain amount of energy which can be converted into heat energy. The objective of the paper is to analyze and compare the efficiency of solar energy conversion in photon and thermal processes, to review the technological advances made in this field, and to indicate potential directions for the development of systems converting solar energy to electricity.
Źródło:
Geology, Geophysics and Environment; 2016, 42, 4; 403-409
2299-8004
2353-0790
Pojawia się w:
Geology, Geophysics and Environment
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Carrier Generation Caused by X-Rays in Organometallic Materials
Autorzy:
Godlewski, J.
Signerski, R.
Jarosz, G.
Stizza, S.
Berrettoni, M.
Powiązania:
https://bibliotekanauki.pl/articles/2011031.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
Opis:
Organometallic compounds play an exceptional role among organic compounds. Due to their structure a number of these compounds demonstrate interesting properties in various phenomena. Organometallic compounds show special properties in the case of X-ray absorption owing to considerable differences between the absorption coefficients of metals and light elements. The analysis of processes of charge carrier generation as a result of X-ray absorption in chosen organometallic compounds is the subject of this paper. Spectral dependences of charge carrier photogeneration efficiency around the Cu K-edge in copper phthalocyanine and copper acetylacetoniane have been specially considered. It has been observed that the photocurrent spectrum in these materials follows the absorption spectrum but mutual relation is not directly proportional. Experimental results connected with current-voltage and current-intensity characteristics have been analysed, as well. The obtained relationships have been compared with adequate results connected with charge carrier photogeneration in visible area and UV in organic materials. It has been observed that the X-ray photogeneration of charge carriers in the examined range of energy differs from the mechanisms of charge carrier generation in visible area and UV. The basic differences arise from the participation of secondary electrons, which are generated due to Auger electrons, Compton effect, and metal fluorescence. The process of charge carrier generation as a result of X-rays absorption is characterized by strong recombination of charge carriers in channels in which charge carriers are generated by high energetic secondary electrons.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 295-301
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Jedno- i dwuwarstwowe organiczne ogniwa fotowoltaiczne
Single and Double-Layer Organic Solar Cells
Autorzy:
Godlewski, J.
Signerski, R.
Jarosz, G.
Obarowska, M.
Szostak, J.
Powiązania:
https://bibliotekanauki.pl/articles/160223.pdf
Data publikacji:
2014
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Elektrotechniki
Tematy:
fotowoltaika
materiały organiczne
photovoltaics
organic materials
Opis:
Omówiona została zasada działania organicznych ogniw fotowoltaicznych na przykładzie ogniw jedno- i dwuwarstwowych. Przedstawione zostały procesy prowadzące do fotogeneracji swobodnych nośników ładunku w układach organicznych, ze szczególnym uwzględnieniem procesu dyfuzji oraz dysocjacji ekscytonu na złączu dwóch materiałów. Przytoczone zostały podstawowe wyrażenia na wartość napięcia fotowoltaicznego dla układów jedno- i dwuwarstwowych oraz wybrane wyniki badań własnych dla ogniw dwuwarstwowych.
This article explains operational principles of organic solar cells for one-layer and bilayer planar devices. A short description of processes leading to photogeneration of free charge carriers, with special emphasis on exciton diffusion to a junction of two materials followed by exciton dissociation at this junction is given. Basic equations for photovoltage obtained for one- and bilayer devices are presented. Moreover, chosen results of research run by our group for bilayer planar solar cells are shown.
Źródło:
Prace Instytutu Elektrotechniki; 2014, 264; 81-90
0032-6216
Pojawia się w:
Prace Instytutu Elektrotechniki
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of Exciton Properties in Quantum Well Structures of ZnCdSe/ZnSe and ZnSe/ZnMgSSe
Autorzy:
Godlewski, M.
Ivanov, V. Yu.
Bergman, J. P.
Monemar, B.
Leonardi, K.
Behringer, M.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/1969074.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
73.20.Mf
73.20.Dx
Opis:
Properties of excitons in quantum well structures of ZnCdSe/ZnSe and ZnSe/ZnMgSSe are compared. In ternary ZnCdSe quantum wells and at low temperature excitons are strongly localised. Weaker localization is observed in quantum well structures of ZnSe/ZnMgSSe. Present studies suggest formation of negatively charged excitons in the latter structures.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 313-316
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of Optical Properties of CdTe/CdMnTe Quantum Wells Grown by Molecular Beam and Atomic Layer Epitaxy
Autorzy:
Godlewski, M.
Kopalko, K.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1952470.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.+z
78.47.+p
78.55.Et
Opis:
Optical properties of a series of CdTe/CdMnTe multi quantum well structures grown with MBE and ALE (CdTe quantum wells only) methods are compared. Based on the results of the photoluminescence experiments we conclude that the ALE growth leads to a different lateral scale of quantum well width fluctuations, which results in different exciton properties in two multi quantum well systems studied. In the wells grown with ALE method excitons are less localized. They can migrate in a quantum well plane between quantum well regions varying in thickness by 1 monolayer.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1012-1016
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Do We Understand Magnetic Properties of ZnMnO?
Autorzy:
Godlewski, M.
Wójcik, A.
Kopalko, K.
Ivanov, V. Yu.
Wilamowski, Z.
Jakieła, R.
Guziewicz, E.
Szczepanik, A.
Dłużewski, P.
Chikoidze, E.
Barjon, J.
Dumont, Y.
Putkonen, M.
Niinistö, L.
Tang, Dong
Powiązania:
https://bibliotekanauki.pl/articles/2047644.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
75.75.+a
78.30.Fs
78.60.Hk
Opis:
Optical and magnetic properties of ZnMnO films are discussed based on the results of cathodoluminescence, photoluminescence, and magneto-photoluminescence investigations. We show that photoluminescence/cathodoluminescence emissions are strongly quenched and become in-plane inhomogeneous in samples with increased Mn fractions. Strong polarization of photoluminescence is observed, even though excitonic lines do not shift and are not split at magnetic fields up to 6 T.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 261-267
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of Light Emission in CdMnS Nanoparticles
Autorzy:
Godlewski, M.
Yatsunenko, S.
Drozdowicz-Tomsia, K.
Goldys, E. M.
Phillips, M. R.
Klar, P. J.
Heimbrodt, W.
Powiązania:
https://bibliotekanauki.pl/articles/2043717.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Wx
78.55.Et
78.47.+p
71.55.Gs
76.30.Fc
76.70.Hb
Opis:
We demonstrate coexistence of slow and fast components of photoluminescence decay of the Mn$\text{}^{2+}$ intra-shell emission in nanoparticles of CdMnS. We explain the observed decrease in PL lifetime of the Mn$\text{}^{2+}$ intra-shell transition by high efficiency of spin dependent magnetic interactions between localized spins of Mn$\text{}^{2+}$ ions and free carriers. This mechanism is enhanced in nanostructures, but it is also present in bulk samples.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 681-688
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Excitation and Recombination Processes in InAs$\text{}_{x}$P$\text{}_{1-x}$:Yb (x=0.04, 0.07 and 0.11)
Autorzy:
Godlewski, M.
Kozanecki, A.
Karpińska, K.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1932083.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.55.Cr
71.35.+z
Opis:
Excitation and recombination mechanisms of Yb$\text{}^{3+}$ 4f-4f intra-shell emission in InP and InAsP (4, 7 and 11% of As) are analyzed.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 217-220
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Dynamics in CdTe/CdMnTe Multiquantum Well Structures Grown by Molecular Beam. Epitaxy on GaAs Substrate
Autorzy:
Godlewski, M.
Koziarska, B.
Suchocki, A.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Bergman, J.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1934057.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.60.-p
78.47.+p
73.20.Fz
71.35.+z
Opis:
The results of picosecond photoluminescence kinetics of four different CdTe/CdMnTe multiquantum well structures grown by MBE on GaAs substrates are presented. The experimental results show that excitons in CdTe quantum wells are strongly localized by potential fluctuations. Photoluminescence decay times of the localized excitons are considerably shorter (about 120 ps) than those reported for free or quasi-free excitons. An influence of Mn in the barriers on exciton properties is demonstrated. For narrow quantum wells as well as for the multiquantum well structure with the highest Mn mole fraction the excitons migrate during their decay to the states with a lower potential energy. Longer decay times are observed for quasi-localized excitons. We show also that for strongly localized excitons the energy transfer between localized and donor bound excitons is less efficient.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 985-989
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Properties in CdTe/CdMnTe Quantum Well Structures with Strong Localization Effects
Autorzy:
Godlewski, M.
Narkowicz, R.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1969075.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
71.55.Jv
73.20.Mf
Opis:
Strong localization effects present in quantum well structures of CdTe/ CdMnTe noticeably affect exciton dynamics and strength and character of exciton-phonon interaction. We show that the temperature dependences of the PL linewidth, PL peak wavelength and PL decay time strongly deviate from those expected for Wannier-excitons in structures with atomically smooth interfaces.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 317-320
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exciton Transfer in Multiple Quantum Well Structures of CdTe/CdMnTe Grown by Molecular Beam Epitaxy
Autorzy:
Godlewski, M.
Surma, M.
Wilamowski, Z.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Holtz, P. O.
Bergman, J. P.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1968091.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
78.55.Et
Opis:
The direct evidence for the efficient transfer of excitons from 4 nm and 6 nm to 10 nm wide CdTe quantum wells is presented based on the results of photoluminescence and photoluminescence excitation investigation. Efficient transfer is observed for quantum wells separated by thick (50 nm) CdMnTe barriers containing 10% or 30% Mn fraction. A new mechanism of the transfer is proposed, which involves long range dynamic magnetic interactions between free/bound excitons and Mn ions in the CdMnTe barrier regions of the structure.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 761-764
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Free Carriers Heating at Mn$\text{}^{2+}$ Magnetic Resonance in CdMnTe
Autorzy:
Godlewski, M.
Gałązka, R. R.
Tsimperidis, I.
Gregorkiewicz, T.
Ammerlaan, C. A. J.
Powiązania:
https://bibliotekanauki.pl/articles/1931938.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
76.70.Hb
75.30.Hx
Opis:
The results of optically detected magnetic and cyclotron resonance experiments performed on Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te (x = 0.007) are presented. It is shown that the Mn$\text{}^{2+}$ magnetic resonance results in heating of free holes, which can be observed via the effects of hot holes on the CdMnTe "edge" emission.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 177-180
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hot Photoluminescence in CdTe/CdMnTe Quantum Well Structures Grown by Molecular Beam Epitaxy
Autorzy:
Godlewski, M.
Wojtowicz, T.
Karczewski, G.
Kossut, J.
Bergman, J. P.
Holtz, P. O.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1968096.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
78.55.Et
Opis:
A step-like emission is observed for CdTe/CdMnTe structures δ-doped with In. The new photoluminescence cannot be explained by neither the Raman process nor by the "ordinary" hot photoluminescence. We propose that magnetic interactions are responsible for the new photoluminescence appearing due to a dramatic increase in a thermalization time of hot excitons.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 765-768
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs
Autorzy:
Godlewski, M.
Bergman, J. P.
Holtz, P. O.
Monemar, B.
Bugajski, M.
Regiński, K.
Kaniewska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933743.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.20.Fz
71.35.+z
Opis:
Exciton properties in growth interrupted quantum wells of GaAs/AlGaAs are compared with those observed for structures grown without growth interruption during the molecular beam epitaxy process. We report observation of quasi-localized excitons in quantum well structures grown without growth interruptions. Quasi-localized excitons drift towards the states of a lower potential energy in the quantum well. For growth interrupted MBE structures islands with a constant quantum well thickness become large compared to the exciton radius. Free or lightly localized excitons are observed in that case.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 719-722
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 53

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