- Tytuł:
- Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to~15~K
- Autorzy:
-
Laurent, T.
Sharma, R.
Torres, J.
Nouvel, P.
Blin, S.
Palermo, C.
Varani, L.
Cordier, Y.
Chmielowska, M.
Faurie,, J.
Beaumont, B. - Powiązania:
- https://bibliotekanauki.pl/articles/1505650.pdf
- Data publikacji:
- 2011-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.80.Ey
73.21.Fg
73.40.-c - Opis:
- We report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high-electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 μs to 400 ns is found to be significant at room temperature whilst this behavior is inverted or even removed at 77 and 15 K temperatures.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 2; 196-198
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł