- Tytuł:
- The Superconducting Transition in Boron Doped Silicon Films
- Autorzy:
-
Kociniewski, T.
Débarre, D.
Grockowiak, A.
Kačmarčík, J.
Marcenat, C.
Bustarret, E.
Ortega, L.
Klein, T.
Prudon, G.
Dubois, C.
Gautier, B.
Dupuy, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1535297.pdf
- Data publikacji:
- 2010-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
74.62.Dh
73.61.Cw
74.70.Ad - Opis:
- We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by gas immersion laser doping. This technique is proved to be a powerful technique to dope silicon in the alloying range 2-10 at.% where superconductivity occurs. The superconducting transitions are sharp and well defined both in resistivity and magnetic susceptibility. The variation of $T_{c}$ on the boron concentration is in contradiction with a classical exponential dependence on superconducting parameters. Electrical measurements were performed in magnetic field on the sample with $c_{B}$ = 8 at.% (400 laser shots) which has the highest $T_{c}$ (0.6 K). No hysteresis was found for the transitions in magnetic field, which is characteristic of a type-II superconductor. The corresponding upper critical field was on the order of 1000 G at low temperatures, much smaller than the value previously reported. The temperature dependence of $H_{c2}$ is very well reproduced by the linearized Gorkov equations neglecting spin effects in the very dirty limit. These measurements in magnetic field allow an estimation of the electronic mean-free path, the coherence length, and the London penetration depth within a simple two-band free electron model.
- Źródło:
-
Acta Physica Polonica A; 2010, 118, 5; 1026-1027
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł