Autor: Druzhinin, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Grain boundary effect on the anisotropy piezoresistance of laser-recrystallized polysilicon layers in SOI-structures
Autorzy:: Pankov, Y.
Druzhinin, A.
Powiązania:: https://bibliotekanauki.pl/articles/307640.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI
polysilicon layers
MLR
Opis:: A physical model of grain boundary influence on the piezoresistive effect of p-type conductivity of polysilicon layers in SOI-structures is developed. Software calculating piezoresistive properties of boron-doped p-type polysilicon layers has been developed. These properties may be calculated over wide concentration and temperature ranges with anisotropy taken into account and with the average grain size as a parameter. The potential barrier regions around the grain boundaries influence the deformation changes of anisotropy resistance in the fine-grained non-recrystallized SOI-structures doped with boron up to 3ź10(19)cm(-3) only.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 46-48
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Experimental and Theoretical Study of Stripe Magnetic Domain Structure Drift in Iron Garnet Crystals
Autorzy:: Pamyatnykh, L.
Shmatov, G.
Pamyatnykh, S.
Lysov, M.
Mekhonoshin, D.
Druzhinin, A.
Powiązania:: https://bibliotekanauki.pl/articles/1385719.pdf
Data publikacji:: 2015-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.40.Mg
75.78.Fg
75.60.Ch
Opis:: The results of experimental and theoretical study of magnetic domain structure drift in low frequency oscillating magnetic field oriented perpendicular to the sample plate are presented. Experimental study was performed on uniaxial iron garnet (TbErGd)₃(FeAl)₅O₁₂ (111) plate with rhombic anisotropy for the case when orientation of domain walls of stripe domains is preserved. Dynamic domain structure was revealed by means of magnetooptic Faraday effect and registered by high speed digital camera at the speed equal to 1200 fps. Theoretical model based on the motion equations for coupled harmonic oscillators that takes into account attenuation and field inhomogeneity along the plate is proposed.
Źródło:: Acta Physica Polonica A; 2015, 127, 2; 388-390
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Topic entities for determination pertinent documents of university campus network
Autorzy:: Druzhinin, E.
Shostak, I.
Slavinskaya, N.
Lysenko, A.
Powiązania:: https://bibliotekanauki.pl/articles/411371.pdf
Data publikacji:: 2017
Wydawca:: Polska Akademia Nauk. Oddział w Lublinie PAN
Tematy:: Task-Centric Click Model
User Behavior
Micropost Search
University Campus Network
Opis:: This paper reviews user-click models and the typed query profile model in order to investigate principles of faster access to documents which are in a university campus network. There wassynthesized university campus user model that is based on the task-centric click model and determines document pertinence conditions, which relies on a user class. A solution of documents search automation was suggested that assumes that users will enable to avoid wasting of time in scientific materials search.
Źródło:: ECONTECHMOD : An International Quarterly Journal on Economics of Technology and Modelling Processes; 2017, 6, 4; 103-109
2084-5715
Pojawia się w:: ECONTECHMOD : An International Quarterly Journal on Economics of Technology and Modelling Processes
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: On possibility to extend the operation temperature range of SOI sensors with polysilicon piezoresistors
Autorzy:: Druzhinin, A.
Lavitska, E.
Maryamova, I.
Kogut, I.
Khoverko, Y.
Powiązania:: https://bibliotekanauki.pl/articles/307642.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI
mechanical sensors
poly-Si piezoresistor
ZMR
Opis:: The aim of this work was to study the possibilities of developing mechanical sensors with poly-Si piezoresistors on insulating substrate for operation in different temperature ranges (low, elevated and high temperatures). Laser recrystallization is used as a technological tool to adjust the electrical and piezoresistive parameters of the polysilicon layer. For this purpose a set of studies including numerical simulation and experimental work has been carried out. The main three directions of the studies are considered: problems of thermal stabilization of the pressure sensor performance at elevated and high temperatures; problem of sensor operation at cryogenic temperatures; development of a multifunctional pressure-temperature sensor.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 40-45
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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