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Wyszukujesz frazę "Chung, B" wg kryterium: Autor


Wyświetlanie 1-6 z 6
Tytuł:
Neural network model for phase-height relationship of each image pixel in 3D shape measurement by machine vision
Autorzy:
Chung, B
Powiązania:
https://bibliotekanauki.pl/articles/173298.pdf
Data publikacji:
2014
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
machine vision
shape measurement
fringe pattern projection
phase-height relationship
neural network
Opis:
In a three-dimensional measurement system based on a digital light processing projector and a camera, a height estimating function is very important. Sinusoidal fringe patterns of the projector are projected onto the object, and the phase of the measuring point is calculated from the camera image. Then, the height of the measuring point is inferred by the phase. The phase-to-height relationship is unique at each image point. However it is nonlinearly different according to the image coordinates. It is also difficult to obtain the geometrical model because of lens distortion. Even though some studies have been performed on neural network models to find the height from the phase and the related coordinates, the results are not good because of the complex relationship. Therefore, this paper proposes a hybrid method that combines a geometric analysis and a neural network model. The proposed method first finds the phase-to-height relationship from a geometric analysis for each image pixel, and then uses a neural network model to find the related parameters for the relationship. The experimental results show that the proposed method is superior to previous neural network methods.
Źródło:
Optica Applicata; 2014, 44, 4; 587-599
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Identification of Vietnamese Ochna integerrima (Lour.) merr species based on ribosomal DNA internal transcribed spacer sequence
Autorzy:
Trang, D.H.
Van Dong, D.
Chung, B.H.
Gioi, D.H.
Khanh, T.D.
Powiązania:
https://bibliotekanauki.pl/articles/11712.pdf
Data publikacji:
2018
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Źródło:
International Letters of Natural Sciences; 2018, 68
2300-9675
Pojawia się w:
International Letters of Natural Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thidiazuron enhanced somatic embryogenes is fromcallus lines of Arabica Coffee and subsequent plant regeneration
Autorzy:
Wang, Y.-C.
Lin, M.-Z.
Huang, B.
Chung, H.-H.
Chen, J.-T.
Powiązania:
https://bibliotekanauki.pl/articles/19649.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Źródło:
Acta Biologica Cracoviensia. Series Botanica; 2018, 60, 2
0001-5296
Pojawia się w:
Acta Biologica Cracoviensia. Series Botanica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Exchange Coupling in Magnetic Semiconductor Multilayers and Superlattices
Autorzy:
Furdyna, J.
Leiner, J.
Liu, X.
Dobrowolska, M.
Lee, S.
Chung, J.
Kirby, B.
Powiązania:
https://bibliotekanauki.pl/articles/1426668.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
61.05.fj
75.47.De
75.70.Cn
Opis:
The study of ferromagnetic semiconductors continues to be of great interest because of their potential for spintronic devices. While there has been much progress in our understanding of ferromagnetic semiconductor materials - particularly of the canonical III-V system $Ga_{1-x}Mn_xAs$ - many issues still remain unresolved. One of these is the nature of interlayer exchange coupling in GaMnAs-based multilayers, an issue that is important from the point of view of possible spintronic applications. In this connection, it is important to establish under what conditions the interlayer exchange coupling between successive GaMnAs layers is antiferromagnetic or ferromagnetic, since manipulation of such interlayer exchange coupling can then be directly applied to achieve giant magnetoresistance and other devices based on this material. In this review we will describe magneto-transport, magnetization, and neutron reflectometry experiments applied to two types of GaMnAs-based multilayer structures - superlattices and tri-layers - consisting of GaMnAs layers separated by non-magnetic GaAs spacers. These measurements serve to identify conditions under which AFM coupling will occur in such GaMnAs/GaAs multilayer systems, thus providing us the information which can be used for manipulating magnetization (and thus also giant magnetoresistance) in structures based on the ferromagnetic semiconductor GaMnAs.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 973-980
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation Of Fine Grained SiC At Reduced Temperature By Two-Step Sintering
Wytwarzanie drobnoziarnistego SiC w obniżonej temperaturze przez dwuetapowe spiekanie
Autorzy:
Kim, K.-W.
Oh, K.-S.
Lee, H.
Kim, B. S.
Chung, T.-J.
Powiązania:
https://bibliotekanauki.pl/articles/353772.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
SiC
liquid phase
two step sintering
coarsening
hardness
faza ciekła
spiekanie dwuetapowe
odporność
twardość
Opis:
Two-step sintering route was applied for the densification SiC by promoting the role of liquid phase. The specimen contained 8 vol% of liquid phase composed of Al2O3 and Y2O3. The heating schedule consisted with initial rapid heating to 2000°C and immediate quenching to 1700 or 1750°C. By heating at elevated temperature, even distribution of the liquid phase was intended. The heat treatment at reduced temperature was to suppress the evaporative loss of the liquid and to secure the time for densification. The two-step sintering effectively suppressed loss of mass and coarsening. The resultant SiC was thus dense and was composed of fine grains exhibiting hardness of 2321 kgf/mm2.
Źródło:
Archives of Metallurgy and Materials; 2015, 60, 2B; 1539-1542
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities
Autorzy:
Głuszko, G.
Łukasiak, L.
Kilchytska, V.
Chung, T. M.
Olbrechts, B.
Flandrie, D.
Raskin, J. P.
Powiązania:
https://bibliotekanauki.pl/articles/308669.pdf
Data publikacji:
2007
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
charge-pumping
electrical characterization
interface traps
SOI
water bonding
Si layer transfer
Opis:
The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.
Źródło:
Journal of Telecommunications and Information Technology; 2007, 3; 61-66
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-6 z 6

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