Autor: Borzdov, V. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Impact Ionization Process in Deep Submicron MOSFET
Autorzy:: Speransky, D.
Borzdov, A.
Borzdov, V.
Powiązania:: https://bibliotekanauki.pl/articles/398035.pdf
Data publikacji:: 2012
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: MOSFET
metoda Monte Carlo
jonizacja zderzeniowa
energia progowa
Monte Carlo
impact ionization
threshold energy
Opis:: Within the framework of Keldysh impact ionization model the calculation of effective threshold energy for silicon MOSFET with 100 nm channel length by means of ensemble Monte-Carlo simulation is performed. The possibility of impact ionization rate treatment with one-parameter Keldysh model in pre-breakdown and breakdown transistor operation mode using calculated effective threshold energy value is proposed.
Źródło:: International Journal of Microelectronics and Computer Science; 2012, 3, 1; 21-24
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Preparation of Carbon-Copper-Silicon Nanocomposite Materials and Coatings Owing to Abrasive-Reactive Wear
Autorzy:: Urakaev, F.
Ketegenov, T.
Borzdov, Y.
Savchenko, I.
Shevchenko, V.
Stankus, S.
Uvarov, N.
Pokhilenko, N.
Powiązania:: https://bibliotekanauki.pl/articles/1538179.pdf
Data publikacji:: 2010-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.20.Ev
81.40.Pq
81.07.Wx
81.07.Bc
81.05.Mh
Opis:: We will focus on the important aspect of mechanical activation by grinding in a mill, namely, nanoscale wear of the treated substances and of the milling tools. A new technology called abrasive-reactive wear has been developed that utilizes wear debris as an integral component of the reaction system rather than treating it as a harmful impurity. This technology is applied to the processing of low-grade diamond and silicon by cupric milling tools. Abnormal influence of graphite on abrasive wear degree is established.
Źródło:: Acta Physica Polonica A; 2010, 117, 5; 873-877
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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