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    Wyświetlanie 1-21 z 21
    Tytuł:
    Wykorzystanie metody przyrostowej w prototypowaniu
    The determination of correlation between compactibility and liquidyty of molding compounds under high pressures
    Autorzy:
    Borysiewicz, A.
    Gonera, P.
    Łęgowik, D.
    Dembiczak, T.
    Gospodarek, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/103793.pdf
    Data publikacji:
    2018
    Wydawca:
    Uniwersytet Humanistyczno-Przyrodniczy im. Jana Długosza w Częstochowie. Wydawnictwo Uczelniane
    Tematy:
    projektowanie
    szybkie prototypowanie
    druk 3D
    design
    rapid prototyping
    3D print
    Opis:
    W artykule przedstawiono chronologię wykonania fizycznego prototypu przez studentów Akademii im. Jana Długosza w Częstochowie. Przedstawiono zaprojektowane modele przestrzenne w myśl zasady od pomysłu do produktu. Opisano metodę szybkiego prototypowania z wykorzystanie techniki druku 3D, dobór filamentów oraz parametrów druku.
    The article presents a chronology of the physical prototype implementation by students of the Jan Dlugosz University in Częstochowa. Designed spatial models were presented in accordance with the principle from idea to product. The method of rapid prototyping with the use of 3D printing technology, selection of filaments and printing parameters has been described.
    Źródło:
    Prace Naukowe Akademii im. Jana Długosza w Częstochowie. Technika, Informatyka, Inżynieria Bezpieczeństwa; 2018, T. 6; 45-56
    2300-5343
    Pojawia się w:
    Prace Naukowe Akademii im. Jana Długosza w Częstochowie. Technika, Informatyka, Inżynieria Bezpieczeństwa
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical investigations of ZnO layers affected by some selected gases in the aspect of their application in optical gas sensors
    Autorzy:
    Struk, P.
    Pustelny, T.
    Gołaszewska, K.
    Borysiewicz, M. A.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/200967.pdf
    Data publikacji:
    2015
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    ZnO
    semiconductor
    gas sensors
    Zno
    czujniki gazu
    półprzewodnik
    Opis:
    The paper presents the results of investigations of zinc oxide (ZnO) layers as a potential sensing material, being affected by certain selected gaseous environments. The investigations concerned the optical transmission through thin ZnO layers in wide spectral ranges from ultraviolet to the near infrared. The effect of the gaseous environment on the optical properties of zinc oxide layers with a thickness of ~ 400 nm was analyzed applying various technologies of ZnO manufacturing. Three kinds of ZnO layers were exposed to the effect of the gaseous environment, viz.: layers with relatively slight roughness (RMS several nm), layers with a considerable surface roughness (RMS some score of nm) and layers characterized by porous ZnO structures. The investigations concerned spectral changes in the transmission properties of the ZnO layers due to the effect of such gases as: ammonia (NH3), hydrogen (H2), and nitrogen dioxide (NO2) in the atmosphere of synthetic air. The obtained results indicated the possibility of applying porous ZnO layered structures in optical gas sensors.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2015, 63, 4; 829-836
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO - Wide bandgap semiconductor and possibilities of its application in optical waveguide structures
    Autorzy:
    Struk, P.
    Pustelny, T.
    Gołaszewska, K.
    Borysiewicz, M. A.
    Kamińska, E.
    Wojciechowski, T.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/220412.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    Wide band gap oxide semiconductors
    ZnO
    integrated optics structures
    planar waveguides
    Opis:
    The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a ≈ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a ≈ 3 dB/cm (TE0 and TM0 modes). The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.
    Źródło:
    Metrology and Measurement Systems; 2014, 21, 3; 401-412
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering
    Autorzy:
    Borysiewicz, M. A.
    Pasternak, I.
    Dynowska, E.
    Jakieła, R.
    Kolkovski, V.
    Dużyńska, A.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048109.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    81.15.Cd
    61.05.cp
    68.37.Hk
    68.37.Ps
    68.49.Sf
    78.55.Et
    Opis:
    ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on using this technology in the sputtering regime.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 686-688
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Recognition of the atmospheric contamination source localization with the Genetic Algorithm
    Autorzy:
    Wawrzynczak, A.
    Jaroszynski, M.
    Borysiewicz, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/92891.pdf
    Data publikacji:
    2015
    Wydawca:
    Uniwersytet Przyrodniczo-Humanistyczny w Siedlcach
    Tematy:
    genetic algorithm
    source characterization
    atmospheric dispersion model
    Opis:
    We have applied the Genetic Algorithm (GA) to the problem of the atmospheric contaminant source localization. The algorithm input data are concentrations of given substance registered by sensor network. To achieve rapid-response event reconstruction,the fast-running Gaussian plume dispersion model is adopted as the forward model. The proposed GA scans 5-dimensional parameters space searching for the contaminant source coordinates (x,y), release strength (Q) and the atmospheric transport dispersion coefficients. Based on the synthetic experiment data the GA parameters like population size, number of generations and the genetic operators best suitable for the algorithm performance are identified. We demonstrate that proposed GA configuration can successfully point out the parameters of abrupt contamination source. Results indicate the probability of a source to occur at a particular location with a particular release rate. The shapes of the probability distribution function of searched parameters values reflect the uncertainty in observed data.
    Źródło:
    Studia Informatica : systems and information technology; 2015, 1-2(19); 27-42
    1731-2264
    Pojawia się w:
    Studia Informatica : systems and information technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Localizing of the atmospheric contamination source based on the Kori field tracer experiment data
    Autorzy:
    Kopka, P.
    Wawrzynczak, A.
    Borysiewicz, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/406603.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    sequential Monte Carlo methods
    accidental releases into the atmosphere
    emergency reaction system
    Opis:
    Accidental releases of hazardous material into the atmosphere pose high risks to human health and the environment. Thus it would be valuable to develop an emergency reaction system which can recognize the probable location of the source based only on concentrations of the released substance as reported by a network of sensors. We apply a methodology combining Bayesian inference with Sequential Monte Carlo (SMC) methods to the problem of locating the source of an atmospheric contaminant. The input data for this algorithm are the concentrations of a given substance gathered continuously in time. We employ this algorithm to locating a contamination source using data from a field tracer experiment covering the Kori nuclear site and conducted in May 2001. We use the second-order Closure Integrated PUFF Model (SCIPUFF) of atmospheric dispersion as the forward model to predict concentrations at the sensors’ locations. We demonstrate that the source of continuous contamination may be successfully located even in the very complicated, hilly terrain surrounding the Kori nuclear site.
    Źródło:
    Operations Research and Decisions; 2015, 25, 2; 35-50
    2081-8858
    2391-6060
    Pojawia się w:
    Operations Research and Decisions
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Loss of offsite power caused by tornado in Surry NPP : a case study
    Autorzy:
    Borysiewicz, M.
    Kaszko, A.
    Kowal, K.
    Potempski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2069302.pdf
    Data publikacji:
    2015
    Wydawca:
    Uniwersytet Morski w Gdyni. Polskie Towarzystwo Bezpieczeństwa i Niezawodności
    Tematy:
    Surry NPP
    tornado
    loss of offsite power
    emergency power system
    probabilistic safety assessment
    Opis:
    The aim of this work was to perform the real case study for the US Surry Nuclear Power Plant which was touched down by tornado in 2011 causing the electrical switch yard destruction and loss of offsite power. Probabilistic methods have been applied to assess the reliability of the reactor shutdown and effective heat removal after this accident. The reactor protection system and auxiliary feedwater system were thoroughly analysed in the context of their safety features designed to prevent the reactor core damage. The emergency power system reliability has been also considered due to the fact that some components of the safety systems are electrically operated. Moreover, time-dependent analysis has been performed in order to address the level of damages after an extreme external event like tornado. Depending on the severity of such events the time required to restore the electrical grid may be significantly different and longer than 24 hours. The reliability and requirements for safety systems are changing with time and these changes have been taken into account as well.
    Źródło:
    Journal of Polish Safety and Reliability Association; 2015, 6, 3; 25--30
    2084-5316
    Pojawia się w:
    Journal of Polish Safety and Reliability Association
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    An application IRIDM the decision making process on fuel conversion of the MARIA reactor
    Zastosowanie IRIDM w procesie decyzyjnym dotyczącym konwersji paliwa w reaktorze MARIA
    Autorzy:
    Borysiewicz, M.
    Kowal, K.
    Prusiński, P. A.
    Dabrowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/408038.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Lubelska. Wydawnictwo Politechniki Lubelskiej
    Tematy:
    nuclear safety
    Integrated Risk Informed Decision Making
    Research Reactor MARIA
    Global Threat Reduction Initiative
    nuclear fuel conversion
    bezpieczeństwo jądrowe
    zintegrowany proces decyzyjny
    reaktor badawczy MARIA
    Inicjatywa Redukcji Zagrożeń Globalnych
    konwersja paliwa
    Opis:
    Poland, when acceded to GTRI (Global Threat Reduction Initiative) in 2004, has committed to convert the nuclear fuel of the Research Reactor MARIA, operated by the National Centre for Nuclear Research (NCBJ) in Świerk. The conversion means giving up of high enriched uranium fuel containing 36% of U-235, which was used so far, and replacing it with the low enriched uranium fuel (19.7% U-235). This article describes the potential usability of the Integrated Risk Informed Decision Making (IRIDM) methodology in optimization of the fuel conversion procedure.
    Polska, przystępując w 2004 roku do programu GTRI (Inicjatywa Redukcji Zagrożeń Globalnych), zobowiązała się do konwersji paliwa jądrowego w reaktorze badawczym MARIA, eksploatowanym przez Narodowe Centrum Badań Jądrowych (NCBJ) w Świerku. Konwersja ta oznacza rezygnację z dotychczas użytkowanego paliwa, zawierającego 36% U-235 i zastąpienie go paliwem nisko wzbogaconym (19.7% U-235). Niniejszy artykuł opisuje potencjalne zastosowanie zintegrowanego procesu decyzyjnego (IRIDM) w optymalizacji procedury konwersji paliwa.
    Źródło:
    Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska; 2013, 3; 3-6
    2083-0157
    2391-6761
    Pojawia się w:
    Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    An integrated risk informed decision making in the nuclear industry
    Zintegrowany proces decyzyjny uwzględniający ryzyko w przemyśle jądrowym
    Autorzy:
    Borysiewicz, M.
    Kowal, K.
    Prusiński, P. A.
    Dąbrowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/408818.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Lubelska. Wydawnictwo Politechniki Lubelskiej
    Tematy:
    nuclear safety
    Integrated Risk Informed Decision Making
    probabilistic safety assessment
    Deterministic Safety Assessment
    bezpieczeństwo jądrowe
    proces decyzyjny
    ryzyko
    probabilistyczne analizy bezpieczeństwa
    deterministyczne analizy bezpieczeństwa
    Opis:
    The regulatory body, established to ensure safety of nuclear facilities, is expected to make right decisions and provide appropriate regulations for the nuclear industry. The traditional manner of its activity has been based on a deterministic approach to safety analyses. However, increased maturity of Probabilistic Safety Assessment (PSA) makes it complementary to deterministic studies. The new IAEA concept, described in this article, is to apply an integrated approach by combining both deterministic and probabilistic insights with other requirements affecting the decision making process.
    Organ regulacyjny, powołany w celu zapewnienia bezpieczeństwa jądrowego, jest odpowiedzialny za podejmowanie decyzji i wprowadzanie rozporządzeń dla przemysłu jądrowego. Tradycyjny sposób jego funkcjonowania opiera się na deterministycznym podejściu do analiz bezpieczeństwa. Rozwój analiz probabilistycznych (PSA) sprawia jednak, iż są one traktowane jako podejście komplementarne. Nowa koncepcja IAEA, opisana w tym artykule, polega na zintegrowanym podejściu, uwzględniającym analizy deterministyczne, probabilistyczne i inne aspekty procesu decyzyjnego.
    Źródło:
    Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska; 2013, 2; 22-34
    2083-0157
    2391-6761
    Pojawia się w:
    Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Gas Sensors Based on ZnO Structures
    Autorzy:
    Struk, P.
    Pustelny, T.
    Gołaszewska, K.
    Borysiewicz, M.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399403.pdf
    Data publikacji:
    2013-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.25.Hz
    42.25.-p
    42.82.Et
    68.35.Ct
    Opis:
    The paper presents the results of investigations concerning sensor structures based on porous layers of zinc oxide (ZnO) sensitive to a selected gaseous environment. The investigations comprised analyses of the influence of the gaseous environment on the optical properties of a sensor structure, in particularly on the change of the spectral characteristics of optical transmission within the range of ultraviolet light and in the visible range. These presented investigations were carried out in such a gaseous environment as nitrogen dioxide $NO_2$ in synthetic air.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 3; 567-569
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor
    Autorzy:
    Taube, A.
    Kruszka, R.
    Borysiewicz, M.
    Gierałtowska, S.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492515.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.dj
    77.22.Ch
    73.40.Qv
    81.15.Gh
    81.15.Cd
    Opis:
    The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with $SiO_2$ and $HfO_2//SiO_2$ gate stacks. From the Terman method low density of interface traps $(D_{it} \approx 10^{11} eV^{-1} cm^{-2})$ at $SiO_2//GaN$ interface was calculated for as-deposited samples. Samples with $HfO_2//SiO_2$ gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of $SiO_2//GaN$ interface shows applicability of $SiO_2$ as a gate dielectric in GaN MOSFET transistors.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-022-A-024
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Porous Zn Growth Mechanism during Zn Reactive Sputter Deposition
    Autorzy:
    Borysiewicz, M.
    Wojciechowski, T.
    Dynowska, E.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198573.pdf
    Data publikacji:
    2014-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    52.70.-m
    81.15.Cd
    77.55.hf
    81.10.Pq
    52.27.Cm
    Opis:
    Ar-O-Zn plasma discharges created during DC reactive magnetron sputtering of a Zn target and RF reactive magnetron sputtering of a ceramic ZnO target were investigated and compared by means of the Langmuir probe measurements in order to determine the mechanism of growth of porous Zn films during DC-mode Zn reactive sputtering. The power supplied to the magnetrons during the sputtering was kept at 125 W and the plasma was characterised as a function of oxygen content in the sputtering gas mixture, ranging from 0 to 60% for two gas pressures related to porous Zn film deposition, namely 3 mTorr and 5 mTorr. Based on the correlation of plasma properties measurements with scanning electron microscope imaging and X-ray diffraction of the films deposited under selected conditions it was found that the growth of porous, polycrystalline Zn films was governed by high electron density in the plasma combined with a high electron temperature and an increased energy of the ions impinging on the substrate.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 5; 1144-1148
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN
    Autorzy:
    Borysiewicz, M.
    Kamińska, E.
    Piotrowska, A.
    Pasternak, I.
    Jakieła, R.
    Dynowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811915.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    68.49.Sf
    68.55.ag
    81.40.Ef
    Opis:
    Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1061-1066
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Observation of Thermally-Activated Electron Traps in GaAs/AlAs/GaAs Heterostructures in Low-Frequency Noise Measurements
    Autorzy:
    Przybytek, J.
    Stankiewicz, R.
    Gryglas-Borysiewicz, M.
    Baj, M.
    Cavanna, A.
    Faini, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048142.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Td
    73.40.Gk
    Opis:
    During our investigations of tunneling process in thin 7 nm thick GaAs/AlAs/GaAs vertical single-barrier tunneling structure with Si δ-doping inside the barrier we have observed fluctuations of the tunneling current which exhibited large Lorentzian noise with intensity depending on biasing voltage. We have shown that Lorentzian noise originates from multilevel random telegraph noise of the small number of fluctuators which influence the tunneling process. Time-domain analysis of the current noise measured for temperatures between 4.2 K and 50 K enabled to determine the thermal activation energies of these fluctuators lying between 0.8 and 3 meV.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 723-725
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Epitaxial Strain on Magnetic Anisotropy in (Ga,Mn)As
    Autorzy:
    Juszyński, P.
    Wasik, D.
    Gryglas-Borysiewicz, M.
    Przybytek, J.
    Szczytko, J.
    Twardowski, A.
    Sadowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1403622.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    75.47.-m
    Opis:
    Two (Ga,Mn)As samples having different magnetic anisotropy (one with in-plane easy axis and another one with out-of-plane easy axis) were studied by means of magnetotransport experiments. Anisotropy field B_{A} was determined for both samples as a function of temperature. For the sample having in-plane easy axis, an inversion of the direction of planar Hall effect hysteresis was observed upon increase of temperature. This result was simulated using the Stoner-Wohlfarth model.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1004-1006
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions
    Autorzy:
    Lewińska, S.
    Gryglas-Borysiewicz, M.
    Przybytek, J.
    Baj, M.
    Jouault, B.
    Gennser, U.
    Ouerghi, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047930.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.-r
    71.20.Nr
    73.23.Hk
    73.63.Hs
    72.10.Di
    85.30.Mn
    73.40.Gk
    Opis:
    Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 606-608
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The PSA analysis of PWR emergency coolant injection availability following SBLOCA
    Autorzy:
    Borysiewicz, M.
    Bronowska, K.
    Kopka, P.
    Kowal, K.
    Kwiatkowski, T.
    Prusiński, A. M.
    Prusiński, P. A.
    Siess, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/146189.pdf
    Data publikacji:
    2013
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    probabilistic safety assessment (PSA)
    small break LOCA (SBLOCA)
    emergency coolant injection (ECI)
    high pressure injection system (HPIS)
    auxiliary feedwater system (AFWS)
    Opis:
    The aim of this article is to briefly introduce the probabilistic safety assessment (PSA) of nuclear power plants (NPPs), its scope, main concepts and application to a real case. The results of analysis presented here have been obtained by the Probabilistic Safety Analysis Group (GPSA) at the National Centre for Nuclear Research (NCBJ, Otwock) as a part of the work done for the Polish National Atomic Energy Agency (NAEA). As a reference, NPP Surry Unit 1 (USA), equipped with 800 MWe Westinghouse triple-loop PWR (pressurized water reactor), has been chosen. The emergency coolant injection (ECI) function availability following the small break loss of coolant accident (SBLOCA) was thoroughly analyzed. The approach and data, which were adopted for the selected part of the SBLOCA sequences, were those used in the U.S. NRC Reactor Safety Study (WASH-1400). As a result of this study, the SBLOCA event tree, including ECI systems, i.e. high pressure injection system (HPIS) and auxiliary feedwater system (AFWS) reliability models, was developed and quantified. The probability of each accident sequence was evaluated using Saphire v.8, the PSA software by U.S. NRC. The choice of the software was based on earlier PSA software study. The failure probability of at least one of the considered safety systems – P(FAIL) is equal to 5.76E-3 and the most pessimistic accident branch (unavailability of both HPIS and AFWS) is about 0.05% of P(FAIL). These results were obtained based on assumption that the SBLOCA has occured. The most significant failure components are those corresponding to charging pumps unavailability, loss of electric power and human errors.
    Źródło:
    Nukleonika; 2013, 58, 2; 307-316
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Zinc Oxide Semiconductor for Photonics Structures Applications
    Autorzy:
    Struk, P.
    Pustelny, T.
    Pustelny, B.
    Gołaszewska, K.
    Kamińska, E.
    Piotrowska, A.
    Borysiewicz, M.
    Ekielski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506857.pdf
    Data publikacji:
    2010-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.25.Hz
    42.70.-a
    42.82.-m
    68.35.Ct
    Opis:
    The paper presents investigations concerning the analysis of photonic structures with grating couplers. In the paper basic theoretically information on photonic structures with grating couplers is presented. The results of numerical investigations on photonic structures with grating couplers are discussed, too. Investigations show an essential influence of the geometrical parameters of grating couplers on the effectiveness of the input and output of optic power into and out of this photonic structure. In the paper the selected results of experimental realizations of photonic structures with grating couplers based on zinc oxide ZnO are presented.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 6; 1242-1245
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Response of ZnO/GaN Heterostructure to Ion Irradiation
    Autorzy:
    Barcz, A.
    Pągowska, K.
    Kozubal, M.
    Guziewicz, E.
    Borysiewicz, M.
    Dyczewski, J.
    Jakieła, R.
    Ratajczak, J.
    Snigurenko, D.
    Dynowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402192.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.82.Fk
    61.85.+p
    68.35.Dv
    Opis:
    In this paper we report on the analysis of Al⁺-implanted ZnO/GaN bilayers in search for the damage production mechanism and possible ion mixing. 100 nm or 200 nm thick ZnO epitaxial layers were grown on GaN substrates by either sputter deposition or atomic layer deposition technique followed by adequate annealing. Ion irradiations of ZnO/GaN were carried out at room temperature using 200 keV Al⁺ ions with fluences of 2×10¹⁵ and 10¹⁶ at./cm². Unprocessed and irradiated samples were characterized by the Rutherford backscattering spectrometry in channeling geometry (RBS\c), X-ray diffraction and transmission electron microscopy. Additionally, secondary ion mass spectrometry was employed for the aforementioned samples as well as for the implanted samples subjected to further annealing. It was found that the damage distributions in ZnO/GaN differ considerably from the corresponding defect profiles in the bulk ZnO and GaN crystals, most probably due to an additional strain originating from the lattice mismatch. Amount of intermixing appears to be relatively small; apparently, efficient recombination prevents foreign atoms to relocate to large distances.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 832-835
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry
    Autorzy:
    Guziewicz, M.
    Jung, W.
    Grochowski, J.
    Borysiewicz, M.
    Golaszewska, K.
    Kruszka, R.
    Baranska, A.
    Piotrowska, A.
    Witkowski, B.
    Domagala, J.
    Gryzinski, M.
    Tyminska, K.
    Stonert, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492706.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Jc
    29.40.-n
    87.53.Bn
    Opis:
    Electrical properties of RF magnetron sputtered p-NiO films were characterized after fabrication and after gamma irradiations using $\text{}^{137}Cs$ and $\text{}^{60}Co$ sources. Electrical parameters are obtained from the Hall measurements, impedance spectroscopy and C-V measurement of n-Si/p-NiO junction diodes. The results show that resistivity of the NiO film is gradually increased following after sequential irradiation processes because of the decrease in holes' concentration. Hole concentration of a NiO film decreases from the original value of $4.36 \times 10^{16} cm^{-3}$ to $2.86 \times 10^{16} cm^{-3}$ after $\text{}^{137}Cs γ$ irradiation with doses of 10 Gy. In the case of γ irradiation from $\text{}^{60}Co$ source, hole concentration of the film decreases from $6.3 \times 10^{16}//cm^3$ to $4.1 \times 10^{16}//cm^3$ and to $2.9 \times 10^{16}//cm^3$ after successive expositions with a dose of 20 Gy.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-069-A-072
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Planar Optical Waveguides for Application in Optoelectronic Gas Sensors
    Autorzy:
    Golaszewska, K.
    Kamińska, E.
    Pustelny, T.
    Struk, P.
    Piotrowski, T.
    Piotrowska, A.
    Ekielski, M.
    Kruszka, R.
    Wzorek, M.
    Borysiewicz, M.
    Pasternak, I.
    Gut, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811559.pdf
    Data publikacji:
    2008-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.82.Et
    07.07.Df
    42.79.Pw
    81.15.-z
    Opis:
    In the paper, the results of technological investigations on planar optical waveguides based on high band gap oxide semiconductors were presented. Investigations concerned the technologies of depositing very thin layers of: zinc oxide ZnO, titanium dioxide $TiO_2$ and tin dioxide $SnO_2$ on substrates of quartz glass plates. There were investigated both morphological structures of the produced layers and their optical properties. The paper also presents investigations on the technology of input-output light systems in the Bragg grating structures.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 6A; A-223-A-230
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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