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    Wyświetlanie 1-22 z 22
    Tytuł:
    Influence of Growth Conditions on Optical Properties of ZnCdSe/ZnSe Quantum Wells Grown by Molecular Beam Epitaxy
    Autorzy:
    Godlewski, M.
    Bergman, J. P.
    Monemar, B.
    Kurtz, E.
    Hommel, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1950749.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.60.-p
    71.35.+z
    76.70.Hb
    Opis:
    The results of investigations of photoluminescence, time-resolved photoluminescence, photoluminescence kinetics and their temperature dependencies are discussed for two types of ZnCdSe/ZnSe multi quantum well structures - for pseudomorphic and for strain relaxed structure. Densities of 2D localized states and averaged localization energies, as seen by excitons, are determined from the photoluminescence kinetics measurements. We show distinct differences between exciton properties in two multi quantum well structures studied.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 785-788
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Properties of GaN Epilayers grown by Gas Source Molecular Beam Epitaxy on AlN Buffer Layer on (111) Si
    Autorzy:
    Godlewski, M.
    Bergman, J. P.
    Monemar, B.
    Rossner, U.
    Barski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1950766.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    71.35.+z
    78.47.+p
    Opis:
    Optical properties of GaN/AlN/Si (111) epilayers grown by MBE are studied. The observed decay transients of excitonic emissions and their temperature dependence is explained by an efficient transfer link between bound and free excitons.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 789-792
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Excitation and Recombination Processes in InAs$\text{}_{x}$P$\text{}_{1-x}$:Yb (x=0.04, 0.07 and 0.11)
    Autorzy:
    Godlewski, M.
    Kozanecki, A.
    Karpińska, K.
    Bergman, J. P.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1932083.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    78.55.Cr
    71.35.+z
    Opis:
    Excitation and recombination mechanisms of Yb$\text{}^{3+}$ 4f-4f intra-shell emission in InP and InAsP (4, 7 and 11% of As) are analyzed.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 217-220
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Recombination Processes in Doped CdTe/CdMnTe Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy
    Autorzy:
    Godlewski, M.
    Wojtowicz, T.
    Karczewski, G.
    Kossut, J.
    Bergman, J. P.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968089.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.47.+p
    78.55.Et
    Opis:
    An influence of doping level on exciton properties in n-doped multiple quantum well structures of CdTe/CdMnTe is studied for multiple quantum well structures prepared in the way that donor (indium) concentration changes within the length of the sample. We show that the formation scenario for neutral donor bound excitons in low-dimensional structures can be different from that observed in bulk samples. We further show that in the case of such quantum well structures we can selectively excite either photoluminescence emission of localized or donor bound excitons, which is a consequence of surprisingly weak energy transfer link between two types of excitonic transitions.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 757-760
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Characterization of CdZnSe/ZnSe Multiquantum Well System
    Autorzy:
    Godlewski, M.
    Karpińska, K.
    Bergman, J. P.
    Monemar, B.
    Kurtz, E.
    Hommel, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1932081.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.60.-p
    71.35.+z
    76.70.Hb
    Opis:
    Optical properties of Cd$\text{}_{x}$Zn$\text{}_{1-x}$Se/ZnSe (x = 0.12) multiquantum well system are discussed. The transient photoluminescence and optically detected cyclotron resonance experiments demonstrate a strong contribution of bound exciton emission to the low temperature photoluminescence spectra.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 209-212
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Inter-Island Energy Transfer in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy
    Autorzy:
    Godlewski, M.
    Holz, P. O.
    Bergman, J. P.
    Monemar, B.
    Regiński, K.
    Bugajski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952469.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    78.47.+p
    73.20.Jc
    Opis:
    The results of photoluminescence, time-resolved photoluminescence, photoluminescence excitation and photoluminescence kinetics studies are presented for a Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As/GaAs quantum well system grown without growth interruptions at the interfaces. The time-resolved photoluminescence measurements show drift of excitons towards lower energy states induced in a quantum well by potential fluctuations. We present also a first direct evidence for migration of free excitons from the 24 to 25 ML regions of the quantum well and interpret these results within a linear rate model, deriving the transition rate of 290 ps$\text{}^{-1}$. Such inter-island migration processes have been observed till now only in growth interrupted structures.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1007-1011
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optically Detected Cyclotron Resonance Studies of CdMnTe/CdTe Multiquantum Wells and CdMgTe/CdMnTe Superlattices
    Autorzy:
    Godlewski, M.
    Świątek, K.
    Harris, C. I.
    Bergman, J. P.
    Monemar, B.
    Waag, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1932082.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.47.+ρ
    76.70.Hb
    68.55.Ln
    71.35.+z
    Opis:
    The results of photoluminescence, time resolved photoluminescence (decay times), optically detected cyclotron and magnetic resonances investigations of CdMnTe/CdTe multiquantum wells and CdMgTe/CdMnTe super-lattices are presented. The role of defects and quantum well width fluctuations in recombination processes of 2D carriers is discussed.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 213-216
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence Studies of Cubic Phase GaN Grown by Molecular Beam Epitaxy on (001) Silicon Covered with Sic Layer
    Autorzy:
    Godlewski, M.
    Ivanov, V. Yu.
    Bergman, J. P.
    Monemar, B.
    Barski, A.
    Langer, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968103.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    78.47.+p
    Opis:
    In this work we evaluate optical properties of cubic phase GaN epilayers grown on top of (001) silicon substrate prepared by a new process. Prior to the growth Si substrate was annealed at 1300-1400°C in propane. The so-prepared substrate is covered with a thin (≈ 4 nm) SiC wafer, which allowed a successful growth of good morphological quality cubic phase GaN epilayers. The present results confirm recent suggestion on smaller ionization energies of acceptors in cubic phase GaN epilayers.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 777-780
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fermi-Edge Singularity in Luminescence Spectra of P-Type Modulation Doped AlGaAs/GaAs Quantum Wells
    Autorzy:
    Bugajski, M.
    Godlewski, M.
    Regiński, K.
    Holtz, P. O.
    Bergman, J. P.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1969046.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    73.20.Dx
    Opis:
    We have studied an enhancement of the oscillator strength for optical transitions near the Fermi energy in p-type modulation-doped quantum wells, which, so far, deserved much less attention than analogous n-type systems, because of the complicated valence band structure involved. The relatively wide (L=150 Å) quantum wells and high doping levels were used, containing more than one occupied subband. The enhancement in the photoluminescence intensity at the Fermi energy resulted from the strong correlation and multiple scattering of holes near the Fermi edge by the localized electrons.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 265-270
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of Optical Properties of CdTe/CdMnTe Quantum Wells Grown by Molecular Beam and Atomic Layer Epitaxy
    Autorzy:
    Godlewski, M.
    Kopalko, K.
    Wojtowicz, T.
    Karczewski, G.
    Kossut, J.
    Bergman, J. P.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952470.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.+z
    78.47.+p
    78.55.Et
    Opis:
    Optical properties of a series of CdTe/CdMnTe multi quantum well structures grown with MBE and ALE (CdTe quantum wells only) methods are compared. Based on the results of the photoluminescence experiments we conclude that the ALE growth leads to a different lateral scale of quantum well width fluctuations, which results in different exciton properties in two multi quantum well systems studied. In the wells grown with ALE method excitons are less localized. They can migrate in a quantum well plane between quantum well regions varying in thickness by 1 monolayer.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1012-1016
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Exciton Properties in CdTe/CdMnTe Quantum Well Structures with Strong Localization Effects
    Autorzy:
    Godlewski, M.
    Narkowicz, R.
    Wojtowicz, T.
    Karczewski, G.
    Kossut, J.
    Bergman, J. P.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1969075.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.-y
    71.55.Jv
    73.20.Mf
    Opis:
    Strong localization effects present in quantum well structures of CdTe/ CdMnTe noticeably affect exciton dynamics and strength and character of exciton-phonon interaction. We show that the temperature dependences of the PL linewidth, PL peak wavelength and PL decay time strongly deviate from those expected for Wannier-excitons in structures with atomically smooth interfaces.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 317-320
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Exciton Dynamics in CdTe/CdMnTe Multiquantum Well Structures Grown by Molecular Beam. Epitaxy on GaAs Substrate
    Autorzy:
    Godlewski, M.
    Koziarska, B.
    Suchocki, A.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Bergman, J.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934057.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.60.-p
    78.47.+p
    73.20.Fz
    71.35.+z
    Opis:
    The results of picosecond photoluminescence kinetics of four different CdTe/CdMnTe multiquantum well structures grown by MBE on GaAs substrates are presented. The experimental results show that excitons in CdTe quantum wells are strongly localized by potential fluctuations. Photoluminescence decay times of the localized excitons are considerably shorter (about 120 ps) than those reported for free or quasi-free excitons. An influence of Mn in the barriers on exciton properties is demonstrated. For narrow quantum wells as well as for the multiquantum well structure with the highest Mn mole fraction the excitons migrate during their decay to the states with a lower potential energy. Longer decay times are observed for quasi-localized excitons. We show also that for strongly localized excitons the energy transfer between localized and donor bound excitons is less efficient.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 985-989
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hot Photoluminescence in CdTe/CdMnTe Quantum Well Structures Grown by Molecular Beam Epitaxy
    Autorzy:
    Godlewski, M.
    Wojtowicz, T.
    Karczewski, G.
    Kossut, J.
    Bergman, J. P.
    Holtz, P. O.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968096.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.47.+p
    78.55.Et
    Opis:
    A step-like emission is observed for CdTe/CdMnTe structures δ-doped with In. The new photoluminescence cannot be explained by neither the Raman process nor by the "ordinary" hot photoluminescence. We propose that magnetic interactions are responsible for the new photoluminescence appearing due to a dramatic increase in a thermalization time of hot excitons.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 765-768
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs
    Autorzy:
    Godlewski, M.
    Bergman, J. P.
    Holtz, P. O.
    Monemar, B.
    Bugajski, M.
    Regiński, K.
    Kaniewska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933743.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.20.Fz
    71.35.+z
    Opis:
    Exciton properties in growth interrupted quantum wells of GaAs/AlGaAs are compared with those observed for structures grown without growth interruption during the molecular beam epitaxy process. We report observation of quasi-localized excitons in quantum well structures grown without growth interruptions. Quasi-localized excitons drift towards the states of a lower potential energy in the quantum well. For growth interrupted MBE structures islands with a constant quantum well thickness become large compared to the exciton radius. Free or lightly localized excitons are observed in that case.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 719-722
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of Exciton Properties in Quantum Well Structures of ZnCdSe/ZnSe and ZnSe/ZnMgSSe
    Autorzy:
    Godlewski, M.
    Ivanov, V. Yu.
    Bergman, J. P.
    Monemar, B.
    Leonardi, K.
    Behringer, M.
    Hommel, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1969074.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.-y
    73.20.Mf
    73.20.Dx
    Opis:
    Properties of excitons in quantum well structures of ZnCdSe/ZnSe and ZnSe/ZnMgSSe are compared. In ternary ZnCdSe quantum wells and at low temperature excitons are strongly localised. Weaker localization is observed in quantum well structures of ZnSe/ZnMgSSe. Present studies suggest formation of negatively charged excitons in the latter structures.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 313-316
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence Dynamics of Exciton Replicas in Homoepitaxial GaN Layers
    Autorzy:
    Korona, K. P.
    Baranowski, J. M.
    Pakuła, K.
    Monemar, B.
    Bergman, J. P.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968240.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.-y
    78.47.+p
    78.55.Cr
    Opis:
    Photoluminescence of excitons and their phonon replicas in homoepitaxial MOCVD-grown gallium nitride (GaN) layers have been studied by picosecond (ps) time-resolved photoluminescence spectroscopy. The time-resolved photoluminescence spectroscopy has shown that the free excitons and their replicas have the fastest dynamics (decay time of about 100 ps). Then, the excitons-bound-to-donors emission rises (with the rise time similar to the free excitons decay time) and decays with t=300 ps. The excitons-bound-to-acceptors has the slowest decay (about 500 ps). It has been found that the ratio of excitons-bound-to-acceptors and excitons-bound-to-donors amplitudes and their decay times are different for 1-LO replicas and then for zero-phonon lines, whereas the ratio of amplitudes and the decay time of the 2-LO replicas are similar to the ones of the zero-phonon lines.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 841-844
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nonradiative Recombination Processes in (CdTe,CdCrTe)/CdMgTe Quantum Well Structures
    Autorzy:
    Godlewski, M.
    Ivanov, V.
    Zakrzewski, A. J.
    Wojtowicz, T.
    Karczewski, G.
    Kossut, J.
    Bergman, J. P.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968108.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.60.-p
    76.70.Hb
    Opis:
    Photoluminescence transitions in (CdTe,CdCrTe)/CdMgTe structure grown by molecular beam epitaxy are studied. Photoluminescence investigations show a very strong reduction of the photoluminescence intensity from chromium doped quantum wells. We explain this fact by a very efficient nonradiative recombination in the chromium-doped quantum wells. The present results indicate that the Auger-type energy transfer from excitons to chromium ions is responsible for the photoluminescence deactivation. The efficiency of this process is evaluated.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 781-784
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface
    Autorzy:
    Lundström, T.
    Bergman, J. P.
    Holtz, P. O.
    Monemar, B.
    Campman, K.
    Merz, J. L.
    Gossard, A. C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968124.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.-w
    78.60.-b
    Opis:
    We have theoretically and experimentally investigated the radiative recombination process in an n-type modulation doped GaAs/Al$\text{}_{0.35}$Ga$\text{}_{0.65}$As heterostructure. The dynamical reshaping of the potential profile across the heterojunction, and the decay of the spatially indirect radiative recombination between electrons in the two-dimensional electron gas and photo-created holes, have been numerically simulated for various values of the electric field across the heterojunction. Optical matrix elements were deduced from a self-consistent solution of the coupled Schrodinger and Poisson equations at every discrete point of time. The calculated recombination energies and integrated luminescence intensities were compared with experimental data from time-resolved photoluminescence measurements on an 800 Å wide GaAs/AlGaAs heterostructure.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 824-828
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Exciton Transfer in Multiple Quantum Well Structures of CdTe/CdMnTe Grown by Molecular Beam Epitaxy
    Autorzy:
    Godlewski, M.
    Surma, M.
    Wilamowski, Z.
    Wojtowicz, T.
    Karczewski, G.
    Kossut, J.
    Holtz, P. O.
    Bergman, J. P.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968091.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.47.+p
    78.55.Et
    Opis:
    The direct evidence for the efficient transfer of excitons from 4 nm and 6 nm to 10 nm wide CdTe quantum wells is presented based on the results of photoluminescence and photoluminescence excitation investigation. Efficient transfer is observed for quantum wells separated by thick (50 nm) CdMnTe barriers containing 10% or 30% Mn fraction. A new mechanism of the transfer is proposed, which involves long range dynamic magnetic interactions between free/bound excitons and Mn ions in the CdMnTe barrier regions of the structure.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 761-764
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency
    Autorzy:
    Shevchenko, E.
    Toropov, A.
    Nechaev, D.
    Jmerik, V.
    Shubina, T.
    Ivanov, S.
    Yagovkina, M.
    Pozina, G.
    Bergman, J.
    Monemar, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376069.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.De
    78.55.Cr
    71.35.-y
    78.66.-w
    Opis:
    We report on optical studies of exciton localization and recombination kinetics in two single 2.2 nm thick $Al_{x}Ga_{1-x}N$/$Al_{x+0.1}Ga_{0.9-x}N$ quantum well structures (x=0.55 and 0.6) grown by plasma assisted molecular beam epitaxy on a c-sapphire substrate. Strong localization potential inherent for both the quantum well and barrier regions results in merging of the quantum well and barrier emission spectra into a single broad line centered at 285 nm (x=0.55) and 275 nm (x=0.6). Time-resolved photoluminescence measurements revealed surprising temperature stability of the photoluminescence decay time constant ( ≈ 400 ps) relevant to the recombination of the quantum well localized excitons. This observation implies nearly constant quantum efficiency of the quantum well emission in the whole range from 4.6 to 300 K.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1140-1142
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mechanisms of Yellow and Red Photoluminescence in Wurtzite and Cubic GaNDOI
    Autorzy:
    Godlewski, M.
    Suski, T.
    Grzegory, I.
    Porowski, S.
    Langer, R.
    Barski, A.
    Bergman, J. P.
    Monemar, B.
    Goldys, E. M.
    Phillips, M. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1969079.pdf
    Data publikacji:
    1998-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.16.Ch
    61.72.Ff
    71.55.Eq
    Opis:
    The origin of two "deep" photoluminescence (PL) emissions observed in wurtzite (yellow PL) and cubic (red PL) GaN is discussed. PL and time-resolved PL studies confirm donor-acceptor pair character of the yellow band in wurtzite GaN and point to participation of shallow donors in this emission. A similar PL mechanism is proposed for the red emission of cubic GaN. We further show a puzzling property of both yellow and red PLs. Both yellow and red emissions show spatial homogeneity and are only weakly dependent on surface morphology.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 2; 326-330
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Microwave-Induced Delocalization of Excitons in Ternary Compounds of II-VI and III-V Semiconductors
    Autorzy:
    Ivanov, V. Yu.
    Godlewski, M.
    Khachapuridze, A.
    Yatsunenko, S.
    Wojtowicz, T.
    Karczewski, G.
    Bergman, J. P.
    Monemar, B.
    Shamirzaev, T.
    Zhuravlev, K.
    Leonardi, K.
    Hommel, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035757.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.35.Ji
    72.25.Rb
    76.70.Hb
    78.55.Et
    Opis:
    In this work we employ technique of optically detected cyclotron resonance for evaluation of the role of localization processes in CdTe/CdMnTe and CdMnTe/CdMgTe quantum well structures. From microwave-induced changes of excitonic emissions we evaluate magnitude of potential fluctuations (Stokes shift), correlate optically detected cyclotron resonance results with the results of time-resolved experiments and discuss nature of recombination processes in the limit of a strong localization.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 559-566
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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