Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Babinski, A." wg kryterium: Autor

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 30
Tytuł:
Deep Level Transient Spectroscopy Measurements of an Acceptor-like State of Metastable EL2 in GaAs and GaAsP
Autorzy:
Babiński, A.
Wysmołek, A.
Słupiński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1929708.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
Opis:
The results of deep level transient spectroscopy measurements of an acceptor-like state of metastable EL2 in GaAs and GaAs$\text{}_{0.97}$P$\text{}_{0.03}$ are presented. The uniaxial stress in GaAs was applied in order to find the deep leve1 transient spectroscopy signal. It was found that the deep level transient spectroscopy signal depended on the stress direction. In GaAs$\text{}_{0.97}$P$\text{}_{0.03}$ the deep level transient spectroscopy peak related to an acceptor-like state of metastable EL2 was observed without external stress.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 673-676
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Properties of an Acceptor-like State of Metastable EL2 in n-type GaAs under Uniaxial Stress
Autorzy:
Babiński, A.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1924252.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Fr
72.80.Ey
Opis:
The electrical resistivity and deep level transient spectroscopy measurements of n-type GaAs under uniaxial stress for [100] and [111] directions at low temperatures are presented. After the transformation of EL2 to its metastable state the stress induced strong anisotropy in the increase in resistivity was observed. The observed splitting of the acceptor-like state of metastable EL2 implies the trigonal symmetry of that defect.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 908-910
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs
Autorzy:
Babiński, A.
Przybytek, J.
Baj, M.
Omling, P.
Samuelson, L.
Słupiński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1923855.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
62.50.-p
Opis:
We present some preliminary results of the first hydrostatic-pressure study of the electronic level related to the Sb-heteroantisite defect in GaAs. We studied two kinds of n-type GaAs samples doped with antimony: bulk samples grown by liquid encapsulated Czochralski method and thin layers grown by metalorganic chemical vapour deposition technique. We found strongly nonlinear pressure dependence of the activation energy of the emission rate for the level. Moreover, the results obtained for the bulk material were fairly different from those obtained for thin metalorganic chemical vapour deposition layers. The possible explanation of this difference is presented.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 841-844
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Localization of Excitons in the Wetting Layer Accompanying Self-Assembled InAs/GaAs Quantum Dots
Autorzy:
Babinski, A.
Raymond, S.
Wasilewski, Z.
Lapointe, J.
Potemski, M.
Powiązania:
https://bibliotekanauki.pl/articles/2038091.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Pq
71.35.Ji
71.70.Ej
Opis:
A wetting layer is a narrow, highly strained quantum well, which accompanies quantum dots grown in Stranski-Krastanow mode. Its importance for a full description of the quantum dots properties has recently been pointed out. It has been shown for example that excitons can be localized by potential fluctuations in the wetting layer. This is equivalent to the formation of "natural" quantum dots in the WL. Excitonic emission from the single dots formed in the wetting layer accompanying the InAs/GaAs self-assembled quantum dots has been investigated in a high magnetic field (up to 23 T). Quadruplet splitting of the investigated emission line has been observed. The attribution of the emission line to the recombination of negatively charged exciton is discussed.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 547-552
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Neutral and Charged Excitons Localized in the InAs/GaAs Wetting Layer
Autorzy:
Babiński, A.
Czyż, M.
Golnik, A.
Borysiuk, J.
Kret, S.
Raymond, S.
Lapointe, J.
Wasilewski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1811914.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
78.55.Cr
78.67.Hc
Opis:
It has recently been shown that potential fluctuations in a wetting layer, which accompanies InAs/GaAs quantum dots can localize excitons. Neutral excitons and biexcitons and charged excitons were identified. In this communication we report on studies of properties of the excitons over wide temperature range (T < 70 K). The micro-photoluminescence measurements enable investigation of excitons localized in a single potential fluctuation. Temperature-induced broadening of the neutral exciton as well as a quenching of the charged exciton at temperatures higher than 50 K are observed and discussed.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1055-1060
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Spectroscopy of Quantum Dots in High Magnetic Fields
Autorzy:
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/2046951.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Cr
75.75.+a
Opis:
Optical spectroscopy measurements of single InAs/GaAs self-assembled quantum dots have been performed. The multiexcitonic emission from the s-, p-, and d-shells of a single dot is observed and investigated in magnetic field up to 28 T. The Zeeman splitting of the s-shell excitons has been found to depend on the dot morphology. While the energy-splitting in flat (2 nm height) dots linearly increases with magnetic field, its significant non-linearity is observed for larger in size, tall (4 nm height) dots. The effect of magnetic field on the orbital motion of carriers in dots has also been investigated. It has been found that the modified Fock-Darwin pattern explains the observed evolution of the emission from highly-excited single tall quantum dot.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 275-286
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Orientation of Metastable EL2 under Uniaxial Stress
Autorzy:
Babiński, A.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1931913.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Fr
72.80.Ey
Opis:
Results of electrical resistivity and Hall measurements of n-type GaAs under uniaxial stress along [111] direction performed at low temperature are presented. Alter the transformation of the EL2 defect into its metastable configuration, a stress-induced increase in electrical resistivity related to the capture of electrons by the acceptor state of the metastable EL2([EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$) was observed. It was found that the stress-induced increase in resistivity depended on the method of EL2-photoquenching. The observed effects are explained as the reorientation of EL2* centers in the crystal. The stress coefficients of the triple degenerate and the single degenerate sublevels of the [EL2*]$\text{}_{-}\text{}_{/}\text{}_{0}$ are found to be equal to -17 meV/GPa and -41 meV/GPa.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 137-140
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Passivation of a Bulk Defect E$\text{}_{c}$-0.22 eV in GaAs by Contact with Phosphoric Acid
Autorzy:
Babiński, A.
Gołdys, E.
Powiązania:
https://bibliotekanauki.pl/articles/1886500.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.70.At
81.60.Cp
71.55.Eq
Opis:
The E$\text{}_{c}$-0.22 eV trap in Horizontal Bridgman undoped n-type GaAs may be passivated by contact with phosphoric acid for 8 hours at room temperature. Isochronal annealing, at around 250°C for 1 hour resulted in the partial recovery of this defect. The possible mechanisms of E$\text{}_{c}$-0.22 eV trap passivation are proposed.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 277-280
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Pressure Dependence of Transition Metal-Related Levels in GaAs
Autorzy:
Babiński, A.
Baj, M.
Hennel, A.
Powiązania:
https://bibliotekanauki.pl/articles/1886748.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
62.50.+p
Opis:
The hydrostatic pressure coefficients of V$\text{}^{3+}$ $\text{}^{/}$ $\text{}^{2+}$ acceptor level in bulk GaAs and of the 0.48 eV trap (related to Ni$\text{}^{2+}$ $\text{}^{/}$ $\text{}^{1+}$ double acceptor level) in VPE GaAs were measured by means of the DLTS technique. The obtained values are 94 meV/GPa and 196 meV/GPa relative to the bottom of the conduction band. For Ni$\text{}^{2+}$ $\text{}^{/}$ $\text{}^{1+}$ level the strong pressure dependence of the capture cross-section activation energy (60 meV/GPa) was also observed.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 323-327
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition
Autorzy:
Bożek, R.
Babiński, A.
Baranowski, J. M.
Stępniewski, R.
Klusek, Z.
Olejniczak, W.
Starowieyski, K.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934054.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
68.55.-a
Opis:
We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 974-976
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Acceptor-Like Level of the EL2 Defect in its Metastable Configuration
Autorzy:
Dreszer, P.
Baj, M.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1879457.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
Opis:
This paper presents for the first time the evident experimental confirmation that EL2 defect, while being in its metastable configuration, traps under hydrostatic pressure an additional electron, i.e. the acceptor-like (EL2*)$\text{}^{0}$ $\text{}^{/}$ $\text{}^{-}$ level enters the energy gap under pressure. We propose that in n-GaAs the EL2 thermal recovery takes always place via the (EL2*)$\text{}^{-}$ state.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 129-132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Molybdenum Disulfide $(MoS_2)$
Autorzy:
Gołasa, K.
Grzeszczyk, M.
Korona, K.
Bożek, R.
Binder, J.
Szczytko, J.
Wysmołek, A.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399110.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.22.-m
71.35.-y
78.20.-e
78.30.-j
Opis:
Research of a monolayer and a bulk $MoS_2$ is reported. The room temperature Raman spectra of the natural $MoS_2$ crystals for the both resonant (632.8 nm) and the non-resonant (532 nm) excitation are presented. The apparent differences observed in the spectra from the bulk and the one monolayer $MoS_2$ are discussed. In particular, the feature due to a first order scattering involving the LA(M) phonon in the resonance Raman spectrum of the one monolayer $MoS_2$ was observed and explained in terms of the disorder in the natural crystal. The disorder is also documented by the line-shape of the room-temperature photoluminescence spectra observed from both the bulk and the one monolayer $MoS_2$.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 849-851
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of Excitons in Quantum Dots with a Weak Confinement
Autorzy:
Gołasa, K.
Molas, M.
Goryca, M.
Kazimierczuk, T.
Smoleński, T.
Koperski, M.
Golnik, A.
Kossacki, P.
Potemski, M.
Wasilewski, Z.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399080.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Statistical properties of neutral excitons, biexcitons and trions confined to natural quantum dots formed in the InAs/GaAs wetting layer are reported. The correlation of the trion binding energy and the biexciton binding energy was found. Magnetospectroscopic measurements of the excitons revealed also the correlation of excitonic effective $g^\ast $ factor of an exciton with the biexciton binding energy. The qualitative picture of the effect of quantum confinement on the observed correlations is presented.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 781-784
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman spectroscopy of shear modes in a few-layer MoS₂
Autorzy:
Gołasa, K.
Grzeszczyk, M.
Zinkiewicz, M.
Nogajewski, K.
Potemski, M.
Wysmołek, A.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1160654.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.-e
87.64.Je
63.20.Kr
Opis:
We study low frequency vibrational modes in atomically thin molybdenum disulfide (MoS₂) by means of the Raman scattering spectroscopy. A shear mode related to rigid interlayer vibrations is identified. Its energy evolution with the increasing number of layers is well described using a linear chain model with only nearest neighbor interactions. The resulting force constant (Kₓ = 2.7 × 10¹⁹ N/m³) corresponds well to the previously published data.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-132-A-134
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Effect of Substrate on Vibrational Properties of Single-Layer MoS₂
Autorzy:
Gołasa, K.
Molas, M.
Nogajewski, K.
Grzeszczyk, M.
Zinkiewicz, M.
Potemski, M.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1398570.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.22.-m
71.35.-y
78.20.-e
78.30.-j
Opis:
We report on the Raman scattering from single-layer molybdenum disulfide (MoS₂) deposited on various substrates: Si/SiO₂, hexagonal boron nitride (h-BN), sapphire, as well as suspended. Room temperature Raman scattering spectra are investigated under both resonant (632.8 nm) and non-resonant (514.5 nm) excitations. A rather weak influence of the substrate on the Raman scattering signal is observed. The most pronounced, although still small, is the effect of h-BN, which manifests itself in the change of energy positions of the E' and A'₁ Raman modes of single-layer MoS₂. We interpret this modification as originating from van der Waals interaction between the MoS₂ and h-BN layers.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1172-1175
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 30

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies