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Wyszukujesz frazę "Żymierska, D." wg kryterium: Autor


Wyświetlanie 1-10 z 10
Tytuł:
Determination of Surface Roughness by Grazing Incidence X-ray Reflectivity
Autorzy:
Żymierska, D.
Powiązania:
https://bibliotekanauki.pl/articles/1945234.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.Dp
68.35.Bs
78.20.Ci
Opis:
The paper presents theoretical calculations of grazing incidence X-ray reflectivity curves for iron and nickel crystals. The computer simulations based on Fresnel theory take into account damping (as the result of surface roughness), which is different from the usual Rayleigh damping. The calculations are performed for a wide range of wavelengths and roughness and also for different distribution of roughness on the surface.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 347-352
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Magnetostriction within Néels Model
Autorzy:
Żuberek, R.
Żymierska, D.
Szymczak, H.
Powiązania:
https://bibliotekanauki.pl/articles/1930607.pdf
Data publikacji:
1994-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Pd
75.70.Cn
Opis:
The aim of the present paper is to determine the surface magnetostriction in the spirit of Néel's model of the surface magnetic anisotropy. Calculations have been performed for bcc and fcc ferromagnetic crystals.
Źródło:
Acta Physica Polonica A; 1994, 85, 2; 439-442
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Studies of Re$\text{}_{3}$Fe$\text{}_{5}$O$\text{}_{12}$ Garnets, ReFeO$\text{}_{3}$ Orthoferrites and ReVO$\text{}_{4}$ Orthovanadates
Autorzy:
Sobczak, E.
Żymierska, D.
Ebel, H.
Powiązania:
https://bibliotekanauki.pl/articles/1945226.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
75.30.Et
71.70.Gm
Opis:
The X-ray photoelectron spectra for Re$\text{}_{3}$Fe$\text{}_{5}$O$\text{}_{12}$ garnets, ReFeO$\text{}_{3}$ orthoferrites and ReVO$\text{}_{4}$ orthovanadates have been measured by using Mg K$\text{}_{α}$ radiation. The O 1s, Re 4d, Fe 2p, and V 2p photoelectron spectra were studied. A very big difference was observed between ReFeO$\text{}_{3}$ orthoferrites and ReVO$\text{}_{4}$ orthovanadates, mainly the Fe 2p $\text{}_{3}\text{}_{/}\text{}_{2}$ lines were double broader than V 2p $\text{}_{3}\text{}_{/}\text{}_{2}$ ones, and the O 1s line is split by about 1.6 eV for orthoferrites, while this line is single for orthovanadates. The O 1s peak at 531.8 eV with intensity about 70% of the main peak is interpreted as originated from a charge fluctuation between oxygen and iron ions due to superexchange interaction.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 329-333
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing
Autorzy:
Klinger, D.
Kret, S.
Auleytner, J.
Żymierska, D.
Powiązania:
https://bibliotekanauki.pl/articles/2035498.pdf
Data publikacji:
2002-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Cc
61.72.Ff
61.72.Ji
61.72.Nn
61.80.Ba
Opis:
An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.
Źródło:
Acta Physica Polonica A; 2002, 102, 2; 259-264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fe Clusters in Fe Intercalated Fullerite
Autorzy:
Sobczak, E.
Żymierska, D.
Byszewski, P.
Traverse, A.
Powiązania:
https://bibliotekanauki.pl/articles/1955842.pdf
Data publikacji:
1997-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.Ht
61.46.+w
71.20.Tx
Opis:
The local structure around Fe ions in the C$\text{}_{60}$Fe$\text{}_{2}$ fullerites before and after heat treatment in temperature of 850 K was investigated by means of Fe K edge X-ray absorption near edge structure and extended X-ray absorption near edge structure methods. The X-ray absorption measurements were performed at liquid nitrogen temperature using synchrotron radiation in transmission mode. The X-ray absorption near edge structure and extended X-ray absorption near edge structure studies showed that the heat treatment of the C$\text{}_{60}$Fe$\text{}_{2}$ fullerite at temperature 850 K causing an irreversible transition from monoclinic to fcc structure is accompanied with changes in the state of Fe ions, part of them forms clusters in bcc structure, while others turn to Fe$\text{}^{3+}$ ions bonded to fullerenes.
Źródło:
Acta Physica Polonica A; 1997, 91, 2; 447-450
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanostructure of Thin Gold Films Investigated by Means of Atomic Force Microscopy and X-Ray Reflectometry Methods
Autorzy:
Żymierska, D.
Auleytner, J.
Domagała, J.
Kobiela, T.
Duś, R.
Powiązania:
https://bibliotekanauki.pl/articles/2035502.pdf
Data publikacji:
2002-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
68.37.Ps
61.10.Kw
Opis:
A study of the thin gold film growth, during the deposition on glass substrate under UHV conditions at low temperatures, is presented. The complementary methods, the atomic force microscopy and grazing incidence X-ray reflectometry, are used for the research. It is shown that due to variation of the time of deposition from 2 to 50 min different kinds of thin Au films nanostructures are obtained: from discontinuous films consisting of isolated islands, via formation of the chains of islands, up to continuous films.
Źródło:
Acta Physica Polonica A; 2002, 102, 2; 289-294
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative Studies of Surface Roughness of Thin Epitaxial Si Films by Computer Simulations and Experimental X-Ray and Optical Methods
Autorzy:
Żymierska, D.
Auleytner, J.
Domagała, J.
Szewczyk, A.
Dmitruk, N.
Powiązania:
https://bibliotekanauki.pl/articles/1964181.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ci
68.35.Bs
61.10.Dp
Opis:
The paper presents investigations of the surface roughness of epitaxial silicon films obtained by chemical vapour deposition with chloric and MOCVD processes. The flat surfaces of films and chemically etched surfaces of substrates were studied by optical methods as well as by X-ray reflectivity at grazing incidence. The computer simulations based on Fresnel theory were compared with the experimental results.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1025-1030
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed
Autorzy:
Żymierska, D.
Godwod, K.
Adamczewska, J.
Auleytner, J.
Choiński, J.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/2030690.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.80.-x
61.10.-i
85.40.Ry
Opis:
The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10$\text{}^{14}$ ions· cm$\text{}^{-2}$ dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 743-750
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
C$\text{}_{60}$FeC$\text{}_{60}$ Complexes in Fe Intercalated Fullerite Studied by X-Ray Absorption
Autorzy:
Sobczak, E.
Traverse, A.
Nietubyć, R.
Swilem, Y.
Byszewski, P.
Żymierska, D.
Powiązania:
https://bibliotekanauki.pl/articles/1963400.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.Ht
61.48.+c
71.20.Tx
Opis:
The aim of Fe K edge XANES and EXAFS studies is to reveal the local structure around Fe ions in C$\text{}_{60}$Fe$\text{}_{x}$ intercalated fullerites. The measurements are performed in transmission mode at LN$\text{}_{2}$ temperature for C$\text{}_{60}$Fe$\text{}_{x}$ powder samples and other materials: ferrocene Fe(C$\text{}_{5}$H$\text{}_{5}$)$\text{}_{2}$, Fe metal foil and α-Fe$\text{}_{2}$O$\text{}_{3}$. The main result is that the XAFS spectra of the C$\text{}_{60}$Fe$\text{}_{2}$ intercalate is almost identical to that of ferrocene and very different from α-Fe and α-Fe$\text{}_{2}$O$\text{}_{3}$. The results support opinion that in the C$\text{}_{60}$Fe$\text{}_{x}$ intercalates the ferrocene-like bonds in complexes C$\text{}_{60}$FeC$\text{}_{60}$ are formed. Additionally, the XAFS spectra showed that neither remarkable amount of Fe metallic clusters nor oxidized iron particles are present in the C$\text{}_{60}$Fe$\text{}_{x}$ sample.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 877-881
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions
Autorzy:
Datsenko, L.
Żymierska, D.
Auleytner, J.
Klinger, D.
Machulin, V.
Klad'ko, V.
Melnik, V.
Prokopenko, I.
Czosnyka, T.
Choiński, J.
Powiązania:
https://bibliotekanauki.pl/articles/2011007.pdf
Data publikacji:
1999-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.10.-i
61.72.-y
Opis:
The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10$\text{}^{14}$ particles/cm$\text{}^{2}$ is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α$\text{}_{1}}$, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
Źródło:
Acta Physica Polonica A; 1999, 96, 1; 137-142
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-10 z 10

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