Autor: Šliužienė, K. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Fabrication and Study of the Organic-Inorganic Semiconductor Diodes Formed on n-Si
Autorzy:: Vengalis, B.
Šliužienė, K.
Lisauskas, V.
Grigaliūnaitė-Vonsevičienė, G.
Butkutė, R.
Lygaitis, R.
Gražulevičius, J.
Powiązania:: https://bibliotekanauki.pl/articles/1506270.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.61.Ph
73.40.Lq
73.40.Ei
73.40.Ns
Opis:: We report fabrication and electrical characterization of the organic-inorganic semiconductor diode structures formed by evaporating thin films of three novel low molecular mass organic compounds on n-type Si substrates. The organic compounds containing carbazole and triphenylamine structural units, namely: 9,9'-bis(4-butylphenyl)-3,3'-bicarbazolyl (BPBC), 4-(1H-perimidin-2-yl)-N,N-diphenylbenzenamine (PER) and 9,9'-diethyl-3,3'-bicarbazolyl (EBC) have been synthesized. The current-voltage characteristics of the Au/(BPBC, EBC, PER)/n-Si diode structures measured at T = 295 K revealed rectifying behavior with a potential barrier height values of 0.71 eV, 0.73 eV, 0.76 eV, respectively.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 262-264
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Study of p-Fe₃O₄/n-(GaAs,Si) Heterostructures: Fabrication and Physical Properties
Autorzy:: Lisauskas, V.
Butkutė, R.
Vengalis, B.
Šliužienė, K.
Tamulevicius, S.
Andrulevicius, M.
Powiązania:: https://bibliotekanauki.pl/articles/1813406.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.-c
73.40.Gk
81.15.Cd
Opis:: We report preparation and investigation of p -n heterostructures based on Fe₃O₄ thin films grown on semiconductor Si and GaAs substrates. Fe₃O₄ films with thickness ranging from 60 to 300 nm were grown at 350÷450°C using dc magnetron sputtering technique. The measurement of X-ray diffraction and reflection high energy electron diffraction revealed polycrystalline microstructure of thin Fe₃O₄ films deposited on both Si and GaAs substrate. Investigation of surface composition by X-ray photoelectron spectroscopy showed that Fe 2p peak consists of three main peaks, namely, metallic iron Fe(0), Fe(II), and Fe(III). Transport measurements of Fe₃O₄/n-(Si, GaAs) heterostructures demonstrated nonlinear current-voltage (I -V) dependences in the temperature range from 300 K to 78 K.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 1055-1058
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: The Surface Hydro-Oxidation of LaNiO$\text{}_{3-x}$ Thin Films
Autorzy:: Mickevičius, S.
Grebinskij, S.
Bondarenka, V.
Lisauskas, V.
Šliužienė, K.
Tvardauskas, H.
Vengalis, B.
Orłowski, B. A.
Osinniy, V.
Drube, W.
Powiązania:: https://bibliotekanauki.pl/articles/2047365.pdf
Data publikacji:: 2007-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
71.20.Nr
29.20.Lq
Opis:: The high-energy X-ray photoelectron spectroscopy was used to determine the composition and chemical structure of epitaxial LaNiO$\text{}_{3-x}$ films obtained by a reactive dc magnetron sputtering. It was found that the oxide and hydroxide species of La and Ni are on the films surface. The thickness of hydroxide enriched layer, estimated from the oxide and hydroxide peak intensities, is about 2 nm.
Źródło:: Acta Physica Polonica A; 2007, 112, 1; 113-120
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites
Autorzy:: Vengalis, B.
Rosa, A. M.
Devenson, J.
Šliužienė, K.
Lisauskas, V.
Oginskis, A.
Anisimovas, F.
Pyragas, V.
Powiązania:: https://bibliotekanauki.pl/articles/2041760.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Cg
73.40.Lg
75.50.Dd
Opis:: High crystalline quality films of n-La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ce$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$, p-La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ca$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO$\text{}_{3}$(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ce$\text{}_{1}\text{}_{/}\text{}_{3}$ Mn O$\text{}_{3}$/La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ca$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 290-293
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Growth and Investigation of Oxide Heterostructures Based on Half-Metallic Fe$\text{}_{3}$O$\text{}_{4}$
Autorzy:: Vengalis, B.
Šliužienė, K.
Lisauskas, V.
Powiązania:: https://bibliotekanauki.pl/articles/2038160.pdf
Data publikacji:: 2004-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.47.Gk
75.47.Lx
07.57.Kp
Opis:: We report thin films of ferromagnetic Fe$\text{}_{3}$O$\text{}_{4}$ (magnetite) grown by a reactive magnetron sputtering at T=300÷450°C on lattice-matched MgO, and bilayer structures composed of Fe$\text{}_{3}$O$\text{}_{4}$ and underlying epitaxial films of highly conductive electron-doped In$\text{}_{2}$O$\text{}_{3}$〈Sn〉, LaNiO$\text{}_{3}$, and antiferromagnetic CoO. The prepared Fe3O4/MgO films and the bilayer structures demonstrated clearly defined resistance anomaly at Verwey transition point (T$\text{}_{V}$≈100-120 K). Formation of high resistance interlayer was indicated between the adjacent conducting Fe3O4 and LaNiO3 layers. However, relatively low interface resistivity of about 0.1 Ω cm$\text{}^{2}$ (at T=300 K) was estimated for the patterned Fe3O4/In2O3〈Sn〉 bilayer structures. Vertical electrical transport measurements revealed strong nonlinearity in the I-U dependences of the Fe3O4/In2O3 〈Sn〉 interface at T
Źródło:: Acta Physica Polonica A; 2004, 105, 6; 659-665
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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