Autor: Šimkiene, I. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Formation of Nanostructured Layers for Passivation of High Power Silicon Devices
Autorzy:: Šalucha, D.
Šimkiene, I.
Sabataityte, J.
Powiązania:: https://bibliotekanauki.pl/articles/1813481.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 85.30.Kk
85.40.Ls
81.05.Rm
Opis:: Nanocrystalline porous silicon films, which have been formed by using simple wet electrochemical etching process in HF electrolyte, were applied for passivation of high power silicon diodes. An optimal technology was designed to manufacture a uniform layer of porous silicon over the area of the p-n junction. The 8% increase in the yield was achieved onO100 mm diameter wafers with 69 cells of diodes in each, by using a very simple technology for the formation of porous layer for passivation of high power silicon diodes.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 1079-1083
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Formation of Porous $n-A_3B_5$ Compounds
Autorzy:: Šimkiene, I.
Kindurys, A.
Treideris, M.
Sabataityte, J.
Powiązania:: https://bibliotekanauki.pl/articles/1813482.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.-t
81.05.Rm
81.05.Ea
Opis:: Porous layers of $A_3B_5$ compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area $(1.5×1.5 cm^2)$ porous layers of uniform porosity were produced by anodization process of n-type $A_3B_5$ semiconductors,
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 1085-1090
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Electrochemical Formation and Microstructure of Porous Gallium Phosphide
Autorzy:: Treideris, M.
Simkiene, I.
Selskis, A.
Balevicius, Z.
Babonas, G.
Powiązania:: https://bibliotekanauki.pl/articles/1505468.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 82.45.Yz
81.07.Bc
61.46.-w
78.40.Pg
Opis:: Electrochemical formation and microstructure of porous GaP have been investigated. Nanostructured porous GaP layers of thickness up to ≈ 20 μm were fabricated on n-type (111)-oriented crystalline c-GaP substrates. Studies of microstructure of porous GaP in dependence on electrolyte type and regimes of technological procedure have been carried out by scanning electron microscopy. The samples were characterized by spectroscopic ellipsometry in visible and near UV spectral range. The investigations have shown that the structure and optical response of porous GaP can be efficiently controlled by technological procedure of electrochemical formation. The shape and dimension of pores can be varied from nanometer-scaled cylindrical pores to GaP nanorods.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 131-134
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Spectroscopic Ellipsometry of Porphyrin Adsorbed in Porous Silicon
Autorzy:: Babonas, G.
Snitka, V.
Rodaitė, R.
Šimkienė, I.
Rėza, A.
Treideris, M.
Powiązania:: https://bibliotekanauki.pl/articles/1178739.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.68.+m
61.43.-j
61.43.Gt
Opis:: Aqueous solution of meso-tetra(4-sulfonatophenyl)porphine was deposited on electrochemically etched n-Si wafers. The morphology of the hybrid systems was investigated by scanning electron microscope and atomic force microscope techniques. The optical response of the hybrid systems was studied by spectroscopic ellipsometry in the range of 1-5 eV. Particular features in adsorption process were revealed for meso-tetra(4-sulfonatophenyl)porphine deposited on variously chemically treated Si substrates. It was found that porphyrin J-aggregates can be intercalated into large pores formed in a bulk n-Si as well as into nanopores of luminescent oxide layer.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 319-323
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Formation of Iron-Containing Clusters in Silica of Predetermined Porosity
Autorzy:: Šimkiene, I.
Baran, M.
Babonas, G.-J.
Bendorius, R.-A.
Rėza, A.
Szymczak, R.
Aleshkevych, P.
Šustavičiūtė, R.
Tamaševičius, R.
Powiązania:: https://bibliotekanauki.pl/articles/2041804.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.46.+w
75.75.+a
78.66.-w
Opis:: Iron-containing nanoparticles and clusters were formed in silica with porosity, which was predetermined by different procedures of sol-gel technology and the chemical composition of precursors. Bulk and layer-type samples of different porosity were synthesized and investigated. The morphology, magnetic, and optical properties were studied to characterize the samples and to analyze the formation of Fe-oxides. Experimental results showed that both Fe$\text{}_{2}$O$\text{}_{3}$ and Fe$\text{}_{3}$O$\text{}_{4}$ were formed in the samples and that their relative amount was dependent on preparation technology.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 400-407
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja