Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Łusakowska, E." wg kryterium: Autor

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 29
Tytuł:
Influence of Substrate on Crystallographic Quality of AlGaN/GaN HEMT Structures Grown by Plasma-Assisted MBE
Autorzy:
Wierzbicka, A.
Żytkiewicz, Z.
Sobańska, M.
Kłosek, K.
Łusakowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1431598.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
61.05.cm
81.15.Hi
68.55.-a
Opis:
Results of characterization of AlGaN/GaN high electron mobility transistor (HEMT) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) are reported. High resolution X-ray diffraction (HRXRD) and X-ray reflectivity (XRR) were applied to show that structural properties of the AlGaN/GaN layers strongly depend on the substrate used for growth. It has been found that an additional 10 μm thick HVPE GaN layer grown on a commercial GaN/sapphire substrate significantly improves structural quality of AlGaN layer. However, the best structural parameters have been obtained for the HEMT sample grown on free-standing HVPE bulk GaN substrate.
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 899-902
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Substrates Grown from the Vapor for ZnO Homoepitaxy
Autorzy:
Skupiński, P.
Kopalko, K.
Łusakowska, E.
Domukhovski, V.
Jakieła, R.
Mycielski, A.
Grasza, K.
Powiązania:
https://bibliotekanauki.pl/articles/1811990.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
68.47.Fg
68.55.J-
68.37.Ps
81.10.Bk
81.15.-z
Opis:
The novel method of preparation of epi-ready ZnO substrates is demonstrated. The substrates were made of unique ZnO crystals grown by chemical vapor transport method using hydrogen as the transport agent. The effect of low-level doping (Mn, Co, Cu, and V) on the structural quality of the crystals was investigated. Atomic layer deposition was used to verify usability of the substrates for homoepitaxy. The thermal annealing prior to the atomic layer deposition process and effect of thermal annealing of the epitaxial layers was studied. The X-ray diffraction and atomic force microscopy methods were applied to study the structural quality of the ZnO layers. Detection of the dopants in the substrates by secondary ion mass spectroscopy made possible the measurement of the thickness of the layers. The obtained root mean square roughness for both the substrates and layers ranged between 0.2 nm and 5 nm, and was dependent on the sample crystallographic orientation and sequence of polishing and annealing procedures. The optimal recipe for the epi-ready substrate preparation was formulated.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1361-1368
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magneto-Transport Characterization of Four-Arm Nanostructure Based on Ferromagnetic (Ga,Mn)As
Autorzy:
Andrearczyk, T.
Wosiński, T.
Figielski, T.
Mąkosa, A.
Tkaczyk, Z.
Łusakowska, E.
Wróbel, J.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811912.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
75.50.Pp
75.30.Gw
75.60.Ch
Opis:
We report on results of magneto-transport measurements performed on four-arm nanostructure fabricated from p-type ferromagnetic $Ga_{0.92}Mn_{0.08}As$ layer. The results reveal hysteresis-like behaviors of low field magnetoresistance. We interpret the magnetoresistance in terms of domain walls, which are expected to be trapped inside the nanostructure at some particular positions and which contribute to the total resistance.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1049-1054
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
(120)-Oriented CdTe/CdMnTe Quantum Well Structures Grown by Molecular Beam Epitaxy
Autorzy:
Kutrowski, M.
Karczewski, G.
Cywiński, G.
Surma, M.
Grasza, K.
Łusakowska, E.
Kossut, J.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1952037.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
78.55.Et
Opis:
We report on the MBE growth and magnetooptical studies of (120)-oriented CdTe/CdMnTe quantum well structures. The quality of structures, as evaluated by the photoluminescence line width, was as good as that of the best structures grown in ⟨100⟩ direction. No spin splitting enhancement, expected theoretically, due to the reduction of the antiferromagnetic interaction between Mn ions in CdTe/CdMnTe digital alloy quantum wells grown along ⟨120⟩ direction was observed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 879-882
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Young modulus and microhardness anisotropy in (Pb,Cd)Te solid solution crystallizing in the rock salt structure and containing 5% of Cd
Autorzy:
Łusakowska, E.
Adamiak, S.
Adamski, P.
Kuna, R.
Minikayev, R.
Skupiński, P.
Szczerbakow, A.
Szuszkiewicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/1055144.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.-x
Opis:
A single crystal of (Pb,Cd)Te solid solution with Cd content equal to 5% was grown by self-selecting vapour growth technique and characterized by powder X-ray diffraction using the X'Pert PANalytical diffractometer and Cu K_{α₁} radiation. The X-ray diffraction pattern refinement demonstrated the fcc structure of the rock-salt type of investigated sample, no precipitates or other crystal phases were detected. The sample chemical composition was determined on the basis of measured lattice parameter value. Next, the Young modulus and microhardness were determined by the nanoindentation for carefully prepared, (001), (011) and (111)-oriented single crystal plates. The slight anisotropy of two parameters mentioned above has been found and compared with available literature data.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 343-346
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Studies of Non-Magnetic Spacer in Thin Fe/Si Multilayers
Autorzy:
Szuszkiewicz, W.
Jouanne, M.
Morhange, J.
Chernyshova, M.
Kowalczyk, L.
Łusakowska, E.
Wandziuk, P.
Luciński, T.
Powiązania:
https://bibliotekanauki.pl/articles/2044545.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
75.70.-i
78.30.-j
Opis:
Structures containing magnetic metallic layers attract a lot of attention because of their possible applications in the area of spintronics. The hybrid structures compatible with the Si crystal lattice parameter are of special interest. In this work the short-period Fe/Si multilayers were grown by the sputtering onto (001)-oriented Si substrate and investigated by various techniques. After the deposition, all multilayers were characterized by atomic force microscopy. The goal of the present paper was to determine the chemical composition of thin layer created at the interface in Fe/Si multilayers due to the Fe diffusion into Si, as well as to analyze the phenomena, which take place in this area. The results of the optical characterization by the Raman scattering were correlated with the magnetic properties of investigated structures (determined by means of the Kerr rotation).
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 891-896
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Solid Phase Epitaxy of Ferromagnetic MnAs Layer and Quantum Dots on Annealed GaMnAs
Autorzy:
Sadowski, J.
Kanski, J.
Adell, M.
Domagała, J. Z.
Janik, E.
Łusakowska, E.
Brucas, R.
Hanson, M.
Powiązania:
https://bibliotekanauki.pl/articles/2044534.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Jt
81.15.Hi
68.65.Hb
68.37.Ps
Opis:
We show that post growth annealing of GaMnAs under As capping at temperatures in the range of 180-210ºC leads to significant surface modifications. Depending on GaMnAs layer thickness and composition, we obtain either a smooth continuous reacted (MnAs) surface layer or 3D islands (quantum dots). The surface modifications are due to a solid phase epitaxial process, in which Mn interstitials diffusing to the GaMnAs surface are bound with the As.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 851-858
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
PVT-Grown Single Crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe as Substrates for Epitaxy
Autorzy:
Mycielski, A.
Szadkowski, A.
Łusakowska, E.
Kowalczyk, L.
Domagała, J.
Bąk-Misiuk, J.
Wilamowski, Z.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1991957.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.10.Bk
Opis:
The process of growth of single crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe by physical vapour transport has been optimized and the twin-free single crystals with a very good crystal structure and low density of dislocations are grown as substrates for MBE and other techniques of epitaxy. Characterization of the crystals is described.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 441-445
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Planar Optical Waveguides Based on Thin ZnO Layers
Autorzy:
Struk, P.
Pustelny, T.
Gut, K.
Gołaszewska, K.
Kamińska, E.
Ekielski, M.
Pasternak, I.
Łusakowska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1807757.pdf
Data publikacji:
2009-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.25.Hz
42.25.-p
42.70.-a
42.82.-m
42.82.Et
68.35.Ct
Opis:
The paper quotes the results of investigations concerning planar optical waveguides with a high value of the refractive index, achieved basing on a broad-band gap semiconductor ZnO, deposited on glass or quartz substrates. The investigations were focused on the properties of the waveguides, determining the modal characteristics, the attenuation coefficient and the structure of the surface.
Źródło:
Acta Physica Polonica A; 2009, 116, 3; 414-418
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Monocrystalline and Polycrystalline ZnO and ZnMnO Films Grown by Atomic Layer Epitaxy - Growth and Characterization
Autorzy:
Wójcik, A.
Kopalko, K.
Godlewski, M.
Łusakowska, E.
Paszkowicz, W.
Dybko, K.
Domagała, J.
Szczerbakow, A.
Kamińska, E.
Powiązania:
https://bibliotekanauki.pl/articles/2038164.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Jk
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
Recently we demonstrated growth of monocrystalline ZnO films by atomic layer epitaxy in the gas flow variant using inorganic precursors. In this study, we discuss properties of ZnO films grown with organic precursors. Successful Mn doping of the ZnO films during the growth was achieved using the Mn-thd complex. Secondary ion mass spectroscopy and X-ray investigations reveal the contents of Mn up to about 20% of the cationic component.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 667-673
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Study of Photoluminescence from Deep CdTe/Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Quantum Wells
Autorzy:
Kutrowski, M.
Wojtowicz, T.
Karczewski, G.
Kopalko, K.
Zakrzewski, A. K.
Janik, E.
Grasza, K.
Łusakowska, E.
Kossut, J.
Powiązania:
https://bibliotekanauki.pl/articles/1876361.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
78.55.Et
Opis:
The photoluminescence studies in CdTe/CdMnTe quantum wells are reported in the temperature range 10-300 K. The MnTe concentration in the barriers is x = 0.3, 0.5, 0.63 and 0.68. Thus the potential wells in our samples are very deep, of the order of ≈ 800 meV in the conduction band and ≈ 200 meV in the valence band in the case of the x = 0.68 sample. In spite of the large lattice mismatch (related to high x value) between the wells and the barriers the observed line widths are as narrow as 2 meV in the case of 100 Å. Clear manifestations of internal strain are observed. In particular, the temperature coefficient of the luminescence energies shows strong dependence on the width of wells.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 500-504
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MnAs Overlayer on GaN(000$\text{}_{1}$)-(1 x 1) - Its Growth, Morphology and Electronic Structure
Autorzy:
Kowalski, B. J.
Kowalik, I. A.
Iwanowski, R. J.
Łusakowska, E.
Sawicki, M.
Sadowski, J.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2038151.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
73.20.At
Opis:
MnAs layer has been grown by means of MBE on the GaN(000$\text{}_{1}$)-(1 x 1) surface. Spontaneous formation of MnAs grains with a diameter of 30-60 nm (as observed by atomic force microscopy) occurred for the layer thickness bigger than 7 ML. Ferromagnetic properties of the layer with Curie temperature higher than 330 K were detected by SQUID measurements. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy for MnAs layer thickness of 1, 2, and 8 ML. Density of the valence band states of MnAs and its changes due to the increase in the layer thickness were revealed.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 645-650
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO by ALD - Advantages of the Material Grown at Low Temperature
Autorzy:
Guziewicz, E.
Godlewski, M.
Krajewski, T.
Wachnicki, Ł.
Łuka, G.
Paszkowicz, W.
Domagała, J.
Przeździecka, E.
Łusakowska, E.
Witkowski, B.
Powiązania:
https://bibliotekanauki.pl/articles/1791286.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
78.66.Hf
72.80.Ey
Opis:
The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as $10^{16} cm^{-3}$ and high mobility ($10-50 cm^{2}$/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 814-817
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hybrid Organic/ZnO p-n Junctions, with n-Type ZnO, Grown by Atomic Layer Deposition
Autorzy:
Łuka, G.
Krajewski, T.
Szczerbakow, A.
Łusakowska, E.
Kopalko, K.
Guziewicz, E.
Wachnicki, Ł.
Szczepanik, A.
Godlewski, M.
Fidelus, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811956.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.J-
73.40.Lq
81.05.Lg
Opis:
We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1229-1234
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of ZnO Films Grown at Low Temperature
Autorzy:
Przeździecka, E.
Krajewski, T.
Wójcik-Głodowska, A.
Yatsunenko, S.
Łusakowska, E.
Paszkowicz, W.
Guziewicz, E.
Wachnicki, Ł.
Szczepanik, A.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1811975.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
81.10.-h
85.30.Fg
Opis:
ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1303-1310
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 29

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies