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Wyświetlanie 1-4 z 4
Tytuł:
Quantum interactions of optical radiation with the defect centres in the tails of the forbidden band of amorphous materials
Autorzy:
Mazinov, A
Shevchenko, A
Bahov, V
Powiązania:
https://bibliotekanauki.pl/articles/173375.pdf
Data publikacji:
2014
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
resonant absorption centres
quantum interaction
semiconductor film
polycrystalline and amorphous silicon
Opis:
In this paper, the model approach that describes the quantum interaction of optical waves with the polycrystalline and amorphous semiconductor films is proposed. The absorption coefficient for active layers of semiconductor films is represented as the sum of pseudo-crystalline and amorphous components. Based on the proposed theoretical approach, we considered the long-wavelength optical absorption spectra of amorphous silicon in 1500–4000 cm–1 range. The resonant absorption centres were identified and were associated with V-V, I-V, V-V defect centres in a silicon gap with energies of 0.20–0.45 eV.
Źródło:
Optica Applicata; 2014, 44, 2; 327-335
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Laser synthes and optimization of parameters of thin films and epitaxial layers of In4Se3, In4Te3
Autorzy:
Vorobets, G. I.
Strebezhev, V. V.
Tkach, V. M.
Vorobets, O. I.
Strebezhev, V. M.
Powiązania:
https://bibliotekanauki.pl/articles/134893.pdf
Data publikacji:
2015
Wydawca:
Tomasz Mariusz Majka
Tematy:
semiconductor thin film
epitaxial layer
laser treatment
indium selenide
indium telluride
Opis:
The influence of the modes of laser treatment on the structural-phase state and electrical properties of thin films and epitaxial layers In4Se3, In4Te3, as well as on the thin-film structures with Schottky barrier of type Au - In4Te3 (In4Se3) are investigated. Thin films In4Se3, In4Te3 received by pulsed laser deposition of stoichiometric homogeneous crystalline materials on a dielectric substrate. The epitaxial layers of In4Se3, In4Te3 were obtained by liquid phase epitaxy. Metal contacts are created by thermal spraying of the respective metals in a vacuum p 10-6 ÷ 10-7 Torr. For the correction of electrophysical characteristics of the studied structures the pulse laser irradiation (PLI) with 1,06 m, 1 ÷ 4 ms was used. The surface morphology of the films on various stages of formation of the structures was investigated by SEM and electron diffraction, and the phase composition was monitored by method X - ray spectral electron probe microanalysis. Study of IV characteristics of film contacts Me - In4Te3 (In4Se3) allowed further identify the phase transformation and the basic mechanisms of charge transport in barrier structures after PLI. Investigation of the spectral photosensitivity of film structures showed that under optimum conditions the laser correction can be obtained the shift of the spectral characteristics from 1,7÷1,8 microns to longer wavelengths. The investigated barrier structures may be promising for use as a photodetector for fiber optic communication lines.
Źródło:
Journal of Education and Technical Sciences; 2015, 2, 1; 5-8
2300-7419
2392-036X
Pojawia się w:
Journal of Education and Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and electrical properties of (Ti-V)Ox thin film as n-type Transparent Oxide Semiconductor
Autorzy:
Mazur, M.
Domaradzki, J.
Wojcieszak, D.
Powiązania:
https://bibliotekanauki.pl/articles/201406.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Transparent Oxide Semiconductor
Transparent Electronics
(Ti-V)Ox thin film
magnetron sputtering
optical and electrical properties
Opis:
In this paper, the influence of vanadium doping on optical and electrical properties of titanium dioxide thin films has been discussed. The (Ti-V)Ox thin films was deposited on silicon and Corning glass substrates using high energy reactive magnetron sputtering process. Measurements performed with the aid of x-ray diffraction revealed, that deposited thin film was composed of nanocrystalline mixture of TiO2-anatase, V2O3 and β-V2O5 phases. The amount of vanadium in the thin film, estimated on the basis of energy dispersive spectroscopy measurement, was equal to 3 at. %. Optical properties were evaluated based on transmission and reflection measurements. (Ti-V)Ox thin film was well transparent and the absorption edge was shifted by only 11 nm towards longer wavelengths in comparison to undoped TiO2. Electrical measurements revealed, that investigated thin film was transparent oxide semiconductors with n-type electrical conduction and resistivity of about 2.7 · 105 Ωcm at room temperature. Additionally, measured I-V characteristics of TOS-Si heterostructure were nonlinear and asymmetrical.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2014, 62, 3; 583-594
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Metal-Semiconductor Transition on the Surface and in the Bulk of Europium Hydride Thin Film
Autorzy:
Knor, M.
Nowakowski, R.
Duś, R.
Powiązania:
https://bibliotekanauki.pl/articles/1418265.pdf
Data publikacji:
2012-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
67.63.Gh
73.61.-r
78.66.-w
73.20.-r
Opis:
Thin europium films (20-50 nm thick) on a glass substrate were transformed into $EuH_x$ (0 < x < 2) by interaction with H_2 introduced into the reactor in successive calibrated doses. By measuring the pressure, the hydrogen uptake (H/Eu) was determined at every step of the reaction. In situ monitoring of bulk properties (electrical resistance R(H/Eu), relative transparency to light T(H/Eu)/$T_0$ and (H/Eu) dependent light transparency spectrum) confirms metal-semiconductor transition at room temperature. Both the electrical resistance and optical transparency of the film strongly increase with hydrogen concentration as a consequence of the resulting increase of the content of semiconducting dihydride. Moreover, the course of work function changes ΔΦ(H/Eu) indicates inversion of the charge-transfer direction on the surface. The transition at room temperature from positively to negatively polarized hydrogen adsorbate was observed in situ during hydrogen uptake. As a result, the work function at equilibrium state varies with hydrogen content from +18 to -18 mV with respect to pure metal film, reflecting the change of "mirror potential" generated on the surface due to the accumulation of hydrogen adsorbates in the subsurface region.
Źródło:
Acta Physica Polonica A; 2012, 122, 4; 698-703
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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