Quantum interactions of optical radiation with the defect centres in the tails of the forbidden band of amorphous materials

In this paper, the model approach that describes the quantum interaction of optical waves with the polycrystalline and amorphous semiconductor films is proposed. The absorption coefficient for active layers of semiconductor films is represented as the sum of pseudo-crystalline and amorphous components. Based on the proposed theoretical approach, we considered the long-wavelength optical absorption spectra of amorphous silicon in 1500–4000 cm–1 range. The resonant absorption centres were identified and were associated with V-V, I-V, V-V defect centres in a silicon gap with energies of 0.20–0.45 eV.