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    Wyświetlanie 1-3 z 3
    Tytuł:
    Debye-Waller Factor in an Isotopically Disordered Semiconductor Crystal
    Autorzy:
    Gairola, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398919.pdf
    Data publikacji:
    2016-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    63.70.+h
    87.64.Bx
    63.20.-e
    63.20.Pw
    64.70.kg
    Opis:
    The diagonal and non-diagonal parts for the Debye-Waller factor have been established using equation of motion technique of quantum dynamics and the Dyson equation approach. The double time temperature dependent phonon Green function has been taken to find the phonon linewidth and phonon shift. Renormalized mode frequency has been investigated in terms of electron-phonon coupling constant and temperature. The effect of electron-phonon interaction on the Debye-Waller factor has been studied in low temperature limit in low impurity concentration in semiconductor crystals.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 6; 1141-1146
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A comparative study on the performance of radiation detectors from the HgI2 crystals grown by different techniques
    Autorzy:
    Martins, J. F. T.
    Costa, F. E.
    dos Santos, R. A.
    de Mesquita, C. H.
    Hamada, M. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/146916.pdf
    Data publikacji:
    2012
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    crystal growth
    iodide mercury crystal
    physical vapor transport (PVT)
    radiation detector
    semiconductor crystal
    Opis:
    In this work, the establishment of a technology for HgI2 purification and crystal growth is described, aiming at a future application of this crystal as a room temperature radiation semiconductor detector. Two methods of crystal growth were studied in the development of this work: (1) physical vapor transport (PVT) and (2) saturated solution from dimethylsulphoxide (DMSO) complexes. In order to evaluate the crystals obtained using each of these methods, systematic measurements were carried out for determining the stoichiometry, structure, orientation, surface morphology and impurity of the crystal. The influence of these physicochemical properties of the crystals developed was evaluated in terms of their performance as a radiation detector. The best response to radiation was found for the crystals grown by the PVT technique. Significant improvement in the performance of HgI2 radiation detector was found, purifying the crystal by means of two successive growths by the PVT technique.
    Źródło:
    Nukleonika; 2012, 57, 4; 555-562
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A diode-pumped high-repetition-frequency passively Q-switched Nd:LaMgAl11O19 laser
    Autorzy:
    Xu, Yan
    Gao, Ziye
    Xia, Guangqiong
    Wu, Zhengmao
    Powiązania:
    https://bibliotekanauki.pl/articles/1835801.pdf
    Data publikacji:
    2020
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    Nd:LaMgAl11O19 disordered crystal
    Q-switched laser
    high pulse repetition frequency
    PRF
    semiconductor saturable absorber mirror
    SESAM
    laser diode
    LD
    Opis:
    High-repetition-frequency Q-switched laser is realized through adopting a Nd:LaMgAl11O19 (Nd:LMA) disordered crystal as the gain material, a laser diode lasing at 796 nm as the pumped source, and a semiconductor saturable absorber mirror (SESAM) as the Q-switched device. The out-put characteristics are analyzed under using different transmittance T plane mirrors as an output coupler. Without adopting SESAM, the laser is operating at a CW state, and a relatively high transmittance is helpful for achieving high output power, slope efficiency and light-to-light efficiency. ForT = 7.5% and an absorbed power of 6.17 W, the output power arrives at its maximum of 1160 mW,and the corresponding slope efficiency and light-to-light efficiency are 20.71% and 18.78%, respectively. After introducing SESAM into the cavity, the laser operates at a passively Q-switched state, and the largest slope efficiency is 13.14% under T = 5.0%. Adopting five different output couplers, with the increase of the absorbed power, the pulse repetition frequencies, the pulse energies and the peak powers will ascend while the pulse widths will decline. The observed narrowest pulse width, the maximum pulse repetition frequency, the highest pulse energy and peak power are 1.745 μs, 175.88 kHz, 3.21 μJ and 1.84 W, respectively.
    Źródło:
    Optica Applicata; 2020, 50, 3; 415-423
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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