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Wyświetlanie 1-15 z 142
Tytuł:
Changes of GaP: N Defect Structure under Hydrostatic Pressure
Autorzy:
Bąk-Misiuk, J.
Domagała, J.
Kozankiewicz, B.
Misiuk, A.
Adamczewska, J.
Skibska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1924323.pdf
Data publikacji:
1993-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
65.70.+y
Opis:
The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c$\text{}_{N}$, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c$\text{}_{N}$ > 10$\text{}^{20}$ at. cm$\text{}^{-3}$. The model explaining the hydrostatic pressure induced defect structure changes is proposed.
Źródło:
Acta Physica Polonica A; 1993, 83, 1; 87-93
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
First-Principles Calculation of He-H Interaction in c-Si
Autorzy:
Gnidenko, A. A.
Zavodinsky, V. G.
Misiuk, A.
Bak-Misiuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/2044684.pdf
Data publikacji:
2006-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.15.Mb
71.55.Cn
Opis:
We used the density functional theory and ab initio pseudopotentials to investigate He-H interaction in crystalline silicon. It was shown that both hydrogen and helium stimulate the formation of vacancy complexes. The presence of hydrogen decreases the vacancy and divacancy formation energies by about 2 eV. The presence of one or two helium atoms reduces the divacancy formation energy by 0.3 and 0.4 eV, respectively. The influence of helium presence on hydrogen diffusion from silicon vacancies under high pressure depends on a helium concentration. Thus, according to our calculation, low concentrations of He increase the hydrogen out-diffusion.
Źródło:
Acta Physica Polonica A; 2006, 109, 3; 353-357
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure
Autorzy:
Bąk-Misiuk, J.
Domagała, J.
Trela, J.
Leszczyński, M.
Misiuk, A.
Härtwig, J.
Prieur, E.
Powiązania:
https://bibliotekanauki.pl/articles/1945264.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.-z
65.70.+y
Opis:
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 405-409
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal
Autorzy:
Misiuk, A.
Adamczewska, J.
Bąk-Misiuk, J.
Härtwig, J.
Morawski, A.
Witczak, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1890764.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.70.At
61.70.-r
81.40.-z
Opis:
The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 317-320
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
O tożsamości nauk o bezpieczeństwie
Autorzy:
Misiuk, Andrzej
Powiązania:
https://bibliotekanauki.pl/articles/519997.pdf
Data publikacji:
2018
Wydawca:
Uniwersytet Mikołaja Kopernika w Toruniu. Wydawnictwo UMK
Tematy:
nauka
dyscyplina naukowa
tożsamość
bezpieczeństwo
zagrożenie
Opis:
The article presents the legal aspects of the positioning of a new scientific discipline – the science of safety in the systematics of Polish science. The determinants of the genesis of this discipline derive from the growing threat to global security. Subsequently, interest in security issues in other scientific disciplines was analyzed, and the resulting difficulty in identifying the identity of the safety sciences was clearly outlined. The author proposed a functional approach to the relationship between safety and risk in the context of risk analysis.
Źródło:
Historia i Polityka; 2018, 23(30); 9-19
1899-5160
2391-7652
Pojawia się w:
Historia i Polityka
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs
Autorzy:
Bak-Misiuk, J.
Dynowska, E.
Romanowski, P.
Misiuk, A.
Sadowski, J.
Caliebe, W.
Powiązania:
https://bibliotekanauki.pl/articles/1431599.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
75.50.Pp
81.40.Vw
Opis:
Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of $Ga_{1-x}Mn_xAs//GaAs$ layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 903-905
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure
Autorzy:
Misiuk, A.
Bąk-Misiuk, J.
Bryja, L.
Kątcki, J.
Ratajczak, J.
Jun, J.
Surma, B.
Powiązania:
https://bibliotekanauki.pl/articles/2030659.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.72.Yx
81.40.Vw
Opis:
Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O$\text{}^{+}$ dose, D, within the 6×10$\text{}^{17}$-2×10$\text{}^{18}$ cm$\text{}^{-2}$ range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10$\text{}^{17}$ cm$\text{}^{-2}$). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 719-727
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terroryzm północnokaukaski. Źródła, przejawy i przeciwdziałanie zjawisku
Autorzy:
Grabowski, Tomasz W.
Misiuk, Andrzej
Łakomy, Miron
Powiązania:
https://bibliotekanauki.pl/books/2029404.pdf
Data publikacji:
2017
Wydawca:
Akademia Ignatianum w Krakowie
Opis:
The basic aim of the work is a scientific description of the terrorism phenomena undertaken by groups with origins in the region of the North Caucasus in the Russian Federation. A more detailed aim is the determination of the sources of the terrorism in this area, presenting its organizational forms, the tactics of the terrorists, and describing Russian antiterrorist actions. The sources of North-Caucasian terrorism mainly come from the social-economic sphere. The demographic conditioning, high level of poverty, unemployment, lack of possibility for social advancement and injustice means that young people often look for drastic solutions to their problems. What is more, the area of the North Caucasus shows many supporting factors that make the choice easier (easy access to weapons, criminalization in social life, presence of radical Islamic ideology, etc.). In general, the reasons for North-Caucasian terrorism are not subject to neutralization, and the main factor that has conditioned the fall in terrorist activity in Russia within the last 2–3 years has been an escalation of the conflict in the Middle East – extremists and terrorists have left this area to join the fighting there. The organizational forms of North-Caucasian terrorism have been subject to continuous evolution. At first, (between 2000–2004), large groups of fighters were operating and mainly consisted of Chechens. Their potential was sufficient for partisan and diversionary actions, and preparing large-scale terrorist attacks, also in the area of Central Russia. Subsequently, the number of active groups fell but they were able to compensate for this drop in potential by constructing an efficient structure called the Caucasian Emirate. They established a mechanism for compensating for their drop in numbers, skillfully managing the geographical location of the main battlefront, and also undertaking efficient actions in terms of raising funds and waging information warfare. The Caucasian Emirate was significantly weakened and finally broken by the determined anti-terrorist actions of the federal and regional authorities combined with the progressive loss of support from the broader society. A decisive factor was the development of the religious conflict in Syria and Iraq, which deprived the Caucasian Emirate of volunteer inflow. Together with its presence outside Russia, North-Caucasian terrorism became an international problem. Armed groups, consisting of representatives of North-Caucasian nations, started to organize in the Middle East, and these organizational units appeared in Europe. Attacks made by people from the Caucasus were made in Boston and Istanbul. The organizational forms of North-Caucasian terrorism evolved in scope to encompass an international range. It became more connected with the movement of global jihad, and has gradually lost an identity that was previously based on fighting the Russians and their local allies in the Caucasus. The form and methods of fighting the terrorists from North Caucasus also evolved. The first method, from the Chechen war, were attacks taking a large number of hostages. Because of these actions, Chechen terrorists became more well known but also more condemned. At the same time, the fighters used different diversionary methods (fire, explosive charges), and partisan activity (rallies). Since 2000, the hallmark of Caucasian terrorism has been the use of the women-terrorist in suicide bomb attacks with both military and civilian targets attacked. In the period of the Caucasian Emirate (2007–2015), the targets of the terrorists were chiefly police officers, however, there were few attacks on civilians in Central Russia and Caucasus. Russian antiterrorist politics is mainly concentrated on forced solutions and eliminating the active terrorists and thus only has brought limited effects. For the terrorists, the risk of being killed in Russia is so large that many have decided to leave for the Middle East. From the other side, the actions of the security forces have brought more violence and new sources of conflict. A lack of programs for fighting terrorism and a systematic approach to the problem means that only the symptoms are neutralized while the underlying reasons remain. Forcing extremist youths to leave is only a partial success since, if the situation in Syria stabilizes, they may try to return to Russia. The prognosis for the further evolution of North-Caucasian terrorism is mainly dependent on the situation in the Middle East. Within recent years (i.e. from the start of the civil war in Syria), the emigration of North-Caucasian radicals has been a continuous phenomenon as they seek to join Islamist groups (Islamic State or Al-Qaeda). While the process continues, the frequency of terrorist attacks in Russia will fall but the risk of attacks in Western Europe is growing – this area is inhabited by a large group of Chechens who are committed to helping Islamic State. If the situation in Syria and Iraq stabilizes, which now seems somewhat distant, the terrorists will look for new places to fight, and it is likely that they will return to Russia or their countries of origin.
Dostawca treści:
Biblioteka Nauki
Książka
Tytuł:
Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry
Autorzy:
Misiuk, A.
Härtwig, J.
Prieur, E.
Ohler, M.
Bąk-Misiuk, J.
Domagała, J.
Surma, B.
Powiązania:
https://bibliotekanauki.pl/articles/1964154.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Yx
81.40.Vw
61.10.-i
Opis:
The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 987-991
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Służby specjalne II Rzeczypospolitej : próba syntezy
Autorzy:
Misiuk, Andrzej (1958- ).
Powiązania:
Korpus Ochrony Pogranicza : w 70 rocznicę powołania [1924-1994] : materiały z konferencji popularnonaukowej, Centrum Szkolenia Straży Granicznej, Kętrzyn 15-16.11.1994 r. / pod red. Lecha Grochowskiego Kętrzyn, 1995 S. 111-117
Współwytwórcy:
Grochowski, Lech. Redakcja
Tematy:
Korpus Ochrony Pogranicza
Dostawca treści:
Bibliografia CBW
Artykuł
Tytuł:
Properties of Si:V Annealed under Enhanced Hydrostatic Pressure
Autorzy:
Misiuk, A.
Wierzchowski, W.
Wieteska, K.
Barcz, A.
Bak-Misiuk, J.
Chow, L.
Vanfleet, R.
Prujszczyk, M.
Powiązania:
https://bibliotekanauki.pl/articles/1504150.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Dd
61.72.uf
64.75.Qr
66.30.Xj
81.40.Xj
Opis:
It is known that processing of silicon implanted with vanadium, Si:V, at high temperature-pressure, HT-HP, can lead to magnetic ordering within the V-enriched area. New data concerning structure of Si:V (prepared using $V^{+}$ doses, D = (1-5) × $10^{15} cm^{-2}$, and energy, E = 200 keV), as implanted and processed for up to 10 h at HT ≤ 1400 K under enhanced hydrostatic pressure, HP ≤ 1.1 GPa, are presented. In effect of implantation, amorphous (a-Si) area is produced near range of implanted species. Transmission electron microscopy, secondary ion mass spectrometry, X-ray, and synchrotron methods were used for sample characterisation. At HT-HP the a-Si layer is subjected to solid phase epitaxial re-growth. Depending on HP, distinct solid phase epitaxial re-growth and formation of $VSi_2$ are observed at HT ≥ 720 K. HP applied at processing results in the improved solid phase epitaxial re-growth in Si:V. This can be related, among others, to the effect of HP on diffusivity of $V^{+}$ and of implantation-induced point defects. Our results can be useful for development of the new family of diluted magnetic semiconductors.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 196-199
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 142

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