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    Wyświetlanie 1-15 z 15
    Tytuł:
    Deep Traps Distribution in $TlInS_2$ Layered Crystals
    Autorzy:
    Isik, M.
    Gasanly, N.
    Ozkan, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808125.pdf
    Data publikacji:
    2009-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Jv
    72.80.Jc
    Opis:
    The trap centers and distributions in $TlInS_2$ were studied in the temperature range of 100-300 K by using thermally stimulated currents technique. Experimental evidence was found for the presence of three trapping centers with activation energies 400, 570, and 650 meV. Their capture cross-sections were determined as 6.3 × $10^{-16}$, 2.7× $10^{-12}$, and 1.8× $10^{-11} cm^{2}$, respectively. It was concluded that in these centers retrapping is negligible as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. An exponential distribution of hole traps was revealed from the analysis of the thermally stimulated current data obtained at different light excitation temperatures. This experimental technique provided a value of 800 meV/decade for the trap distribution.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 3; 732-737
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Trapping Center Parameters in TlInS$\text{}_{2}$ Layered Crystals by Thermally Stimulated Current Measurements
    Autorzy:
    Yuksek, N. S.
    Gasanly, N. M.
    Ozkan, H.
    Karci, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038188.pdf
    Data publikacji:
    2004-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.80.Jc
    Opis:
    Thermally stimulated current measure ments are carried out on TlInS$\text{}_{2}$ layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS$\text{}_{2}$ crystal in the low-temperature region.
    Źródło:
    Acta Physica Polonica A; 2004, 106, 1; 95-103
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Excitation and Temperature Tuned Photoluminescence in Tl$\text{}_{2}$In$\text{}_{2}$S$\text{}_{3}$Se Layered Crystals
    Autorzy:
    Guler, I.
    Goksen, K.
    Gasanly, N. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047173.pdf
    Data publikacji:
    2006-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.-b
    71.20.Nr
    78.20.-e
    78.55.-m
    Opis:
    Photoluminescence spectra of Tl$\text{}_{2}$In$\text{}_{2}$S$\text{}_{3}$Se layered single crystals have been studied in the wavelength region of 535-725 nm and in the temperature range of 22-58 K. Two photoluminescence bands centered at 564 (2.20 eV, A-band) and 642 nm (1.93 eV, B-band) were observed at T = 22 K. Variations of both bands have been investigated as a function of excitation laser intensity in the range from 16 to 516 mW cm$\text{}^{-2}$. These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located 0.02 and 0.01 eV below the bottom of conduction band to acceptor levels located 0.05 and 0.44 eV above the top of the valence band are suggested to be responsible for the observed A- and B-bands in the photoluminescence spectra, respectively.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 6; 823-831
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Temperature Dependence of the First-Order Raman Phonon Lines in GaS$\text{}_{0.25}$Se$\text{}_{0.75}$ Layered Crystals
    Autorzy:
    Gasanly, N. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035649.pdf
    Data publikacji:
    2002-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.-e
    78.30.-j
    78.30.Hv
    Opis:
    Systematic measurements by Raman scattering of the frequency and line width of the zone-center optical modes in GaS$\text{}_{0.25}$Se$\text{}_{0.75}$ layered crystal over the temperature range of 10-300 K are carried out. The analysis of temperature dependence of intralayer modes shows that frequency shift and line broadening are successfully modeled by including the contributions from thermal expansion and lattice anharmonicity. The purely anharmonic contribution (phonon-phonon coupling) is found to be due to three-phonon processes.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 6; 801-810
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Low-Temperature Thermoluminescence Studies on $TlInS_{2}$ Layered Single Crystals
    Autorzy:
    Isik, M.
    Delice, S.
    Gasanly, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1377812.pdf
    Data publikacji:
    2014-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.40.Fy
    71.55.-i
    78.60.Kn
    Opis:
    Thermoluminescence characteristics of $TlInS_{2}$ layered single crystals grown by the Bridgman method were investigated in the low temperature range of 10-300 K. The illuminated sample with blue light ( ≈ 470 nm) at 10 K was heated at constant heating rate. Curve fitting, initial rise and various heating rate methods were used to determine the activation energy of the trap levels. All applied methods showed good consistency about the presence of five trapping centers located at 14, 19, 350, 420, and 520 meV. Behavior of the TL curve for various heating rates was investigated. Traps distribution has also been studied. The activation energies of the distributed trapping centers were found to be increasing from 14 to 46 meV.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 6; 1299-1303
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Raman Scattering Characterization of $Mo_xW_{1-x}S_2$ Layered Mixed Crystals
    Autorzy:
    Sigiro, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398311.pdf
    Data publikacji:
    2017-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    Raman-active mode
    layered mixed crystal
    atomic displacement
    chemical-vapor transport method
    Opis:
    A series of $Mo_xW_{1-x}S_2$ (0 ≤ x ≤1) layered mixed crystals was grown by the chemical vapor transport method. A systematic study of these crystals was then conducted using the Raman scattering measurements. The peaks of the two dominant first-order Raman-active modes, $A_{1g}$ and $E_{2g}^1$, and of several second-order bands are observed from 150 cm¯¹ to 500 cm¯¹. The peaks corresponding to $A_{1g}$ mode show one-mode type behavior, whereas the peaks of $E_{2g}^1$ mode demonstrate two-mode type behavior for the entire series. These results can be explained by the atomic displacements of each mode. For $A_{1g}$ mode, only S atoms vibrate, thereby resulting in a one-mode type behavior for the mixed crystals. For $E_{2g}^1$ mode, metal and S atoms vibrate. The mass difference in the vibrating Mo and W cations causes the two-mode type behavior of $E_{2g}^1$ mode. In addition, the largest asymmetry and broadening of $A_{1g}$ mode for $Mo_{0.5}W_{0.5}S_2$ is attributed to random alloy scattering.
    Źródło:
    Acta Physica Polonica A; 2017, 131, 2; 259-262
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Isomorphic Atom Substitution on Lattice Anisotropy of Thallium Dichalcogenide Layered Mixed Crystals
    Autorzy:
    Gasanly, N. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047086.pdf
    Data publikacji:
    2006-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.Nz
    61.66.Dk
    61.50.Ks
    Opis:
    Compositional variation of the lattice parameters of TlBX$\text{}_{2}$-type (B = Ga or In and X = S or Se) mixed crystals with monoclinic structure were studied by X-ray diffraction technique. The lattice anisotropy (c/b) of these mixed crystals changes linearly with substitution of the atoms located both at the centers and the vertices of the corresponding BX$\text{}_{4}$ tetrahedra. A brief survey of the important features of the effect of isomorphic atom substitution on the lattice anisotropy and the unit cell volume of TlBX$\text{}_{2}$-type mixed crystals with layered structure was presented.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 4; 471-477
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Radiative Donor-Acceptor Pair Recombination in $Tl_2Ga_2Se_3S$ Layered Single Crystals
    Autorzy:
    Gasanly, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400493.pdf
    Data publikacji:
    2013-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    78.20.-e
    71.55.-i
    Opis:
    The emission band spectra of $Tl_2Ga_2Se_3S$ layered crystals have been studied in the temperature range of 10-50 K and in the wavelength region of 540-700 nm. A broad photoluminescence band centered at 626 nm (1.98 eV) was observed at T=10 K. Variation of emission band has been studied as a function of excitation laser intensity in the 0.4-51.5 mW $cm^{-2}$ range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission band is in agreement with the idea of separation inhomogeneity of donor-acceptor pairs. Radiative transitions from the moderately deep donor level $E_{d}$=270 meV to the shallow acceptor level $E_{a}$=10 meV were suggested to be responsible for the observed photoluminescence band.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 1; 128-132
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Absorption and Reflection Studies of Tl$\text{}_{4}$InGa$\text{}_{3}$S$\text{}_{8}$ Layered Single Crystals
    Autorzy:
    Goksen, K.
    Gasanly, N. M.
    Ozkan, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047363.pdf
    Data publikacji:
    2007-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.Ci
    78.40.-q
    78.40.Fy
    Opis:
    The optical properties of Tl$\text{}_{4}$InGa$\text{}_{3}$S$\text{}_{8}$ layered single crystals have been studied by means of transmission and reflection measurements in the wavelength region between 400 and 1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.40 and 2.61 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed the rate of change of the indirect band gap with temperature asγ=-6.0×10$\text{}^{-4}$ eV/K. The absolute zero value of the band gap energy was obtained as E$\text{}_{gi}$(0)= 2.52 eV. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength, and zero-frequency refractive index were found to be 5.07 eV, 26.67 eV, 8.82×10$\text{}^{13}$ m$\text{}^{-2}$, and 2.50, respectively.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 1; 93-100
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Compositional Dependence of Optical Modes Frequencies in $TlGa_xIn_{1-x}S_2$ Layered Mixed Crystals (0 ≤ x ≤1)
    Autorzy:
    Isik, M.
    Gasanly, N.
    Korkmaz, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1204878.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.82.Fk
    77.84.Bw
    78.20.-e
    78.30.-j
    Opis:
    The infrared transmittance and Raman scattering spectra in $TlGa_xIn_{1-x}S_2$ (0 ≤ x ≤1) layered mixed crystals grown by the Bridgman method were studied in the frequency ranges of 400-2000 and 250-$400 cm^{-1}$, respectively. The bands observed at room temperature in IR transmittance spectra of $TlGa_xIn_{1-x}S_2$ were interpreted in terms of multiphonon absorption processes. The dependences of the frequencies of IR- and Raman-active modes on the composition of $TlGa_xIn_{1-x}S_2$ mixed crystals were also established. The structural characterization of the mixed crystals was investigated by means of X-ray diffraction measurements and compositional dependence of lattice parameters was revealed.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 3; 747-750
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    UV-Induced Anisotropy in CdBr2-CdBr2: Cu Nanostructures
    Anizotropia wywołana promieniowaniem UV w nanostrukturach CdBr2-CdBr2: Cu
    Autorzy:
    El-Naggar, A. M.
    Albassam, A. A.
    Oźga, K.
    Szota, M.
    Kityk, I. V.
    Powiązania:
    https://bibliotekanauki.pl/articles/356453.pdf
    Data publikacji:
    2015
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    CdBr2-CdBr2: Cu nanocrystalline film
    UV-induced anisotropy
    optical properties
    birefringence
    layered crystals
    warstwy nanokystaliczne CdBr2-CdBr2: Cu
    anizotropia wywołana UV
    właściwości optyczne
    dwoistość
    kryształy warstwowe
    Opis:
    We have found an occurrence of anisotropy in the nanostructure CdBr2-CdBr2: Cu nanocrystalline films. The film thickness was varied from 4 nm up to 80 nm. The films were prepared by successive deposition of the novel layers onto the basic nanocrystals. The detection of anisotropy was performed by occurrence of anisotropy in the polarized light at 633 nm He-Ne laser wavelength. The occurrence of anisotropy was substantially dependent on the film thickness and the photoinduced power density. Possible mechanisms of the observed phenomena are discussed.
    Wykryto pojawienie się anizotropii w nanostrukturalnych warstwach nanokrystalicznych CdBr2-CdBr2: Cu. Grubość warstwy zmieniano w zakresie od 4 nm do 80 nm. Nanostrukturalne warstwy otrzymano poprzez kolejne osadzanie na nowych warstwach na podstawie nanokrystalitów. Detekcję anizotropii wykonano w spolaryzowanym świetle lasera gazowego He-Ne o długości fali 633 nm. Anizotropia optyczna występująca w warstwach w znacznym stopniu zależy od grubości warstwy i gęstości mocy indukowanej światłem. Omówiono możliwe mechanizmy obserwowanego zjawiska.
    Źródło:
    Archives of Metallurgy and Materials; 2015, 60, 3A; 2029-2032
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Tuning Optical Absorption Edge by Composition and Temperature in $TlGaS_{2x}Se_{2(1-x)}$ Layered Mixed Crystals (0 ≤ x ≤ 1)
    Autorzy:
    Gasanly, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1418284.pdf
    Data publikacji:
    2012-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.Ci
    78.40.-q
    78.40.Fy
    Opis:
    Optical properties of $TlGaS_{2x}Se_{2(1-x)}$ mixed crystals (0 ≤ x ≤1) have been studied using the transmission and reflection measurements in the wavelength range of 400-1100 nm. The optical indirect band gap energies were determined through the analysis of the absorption data. It was found that the energy band gaps increase with increase of sulfur atoms content in $TlGaS_{2x}Se_{2(1-x)}$ mixed crystals. From the transmission measurements carried out in the temperature range of 10-300 K, the rates of change of the indirect band gaps with temperature were established for the different compositions of mixed crystals studied.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 4; 728-731
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ferroelastic Phase Transition in a Layered Bismuth Oxychloride Single Crystals
    Autorzy:
    Bunda, V.
    Bunda, S.
    Vashchuk, F.
    Feher, A.
    Kajňaková, M.
    Kováč, J.
    Syrkin, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1535538.pdf
    Data publikacji:
    2010-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    64.70.K-
    81.30.-t
    65.40.-b
    Opis:
    We report the results of low-temperature specific-heat, magnetization, and X-ray diffraction measurements on a bismuth oxyhalide (BiOCl) single crystal. We conclude that BiOCl in temperature region 150-230 K shows "antiferroelastic-paraelectric" phase transitions at critical temperatures $T_{c1}$ = 167.5 K and $T_{c2}$ = 214.6 K, respectively.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 5; 1069-1070
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Admittance and Permittivity in Doped Layered $TlGaSe_2$ Single Crystals
    Autorzy:
    Dawood, S.
    Fedotov, A.
    Mammadov, T.
    Zukowski, P.
    Koltunowicz, T.
    Saad, A.
    Drozdov, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1365735.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    84.37.+q
    64.70.Nd
    Opis:
    In doped $TlGaSe_2$ crystals the phase transitions at low temperatures (100-170 K) were observed using admittance and dielectric spectroscopy in a temperature range of 80-320 K. The admittance and permittivity measurements in the studied samples indicated that after Fe or Tb doping by impurities with concentrations $N_\text{imp}$ < 0.5 at.% nonequilibrium electronic phase transition is observed. Doping with $N_\text{imp}$ > 0.5 at.% resulted in full suppression of this phase transition presence.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1267-1270
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Low-Temperature Raman Scattering in TlGa$\text{}_{x}$In$\text{}_{1-x}$S$\text{}_{2}$ Layered Mixed Crystals: Compositional Dependence of the Mode Frequencies and Line Shapes
    Autorzy:
    Gasanly, N. M.
    Yuksek, N. S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044573.pdf
    Data publikacji:
    2005-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.-e
    78.30.Hv
    78.30.-j
    Opis:
    The Raman spectra of TlGa$\text{}_{x}$In$\text{}_{1-x}$S$\text{}_{2}$ layered mixed crystals were studied for a wide range of composition (0≤x≤1) at T=50 K. The effect of crystal disorder on the line width broadening of the Raman-active modes are discussed. The asymmetry in the Raman line shape is analyzed for two interlayer and intralayer modes exhibiting one-mode behavior.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 6; 997-1003
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-15 z 15

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