- Tytuł:
- Damage distributions in GaAs single crystal irradiated with 84Kr (394 MeV), 209Bi (710 MeV) and 238U (1300 MeV) swift ions
- Autorzy:
-
Didyk, A. Y.
Komarov, F. F.
Vlasukova, L. A.
Gracheva, E. A.
Hofman, A.
Yuvchenko, V. N.
Wiśniewski, R.
Wilczyńska, T. - Powiązania:
- https://bibliotekanauki.pl/articles/146738.pdf
- Data publikacji:
- 2008
- Wydawca:
- Instytut Chemii i Techniki Jądrowej
- Tematy:
-
semiconductors
gallium arsenide
swift heavy ions
inelastic energy loss
atomic force microscopy (AFM) - Opis:
- We are presenting a study of damage distribution in GaAs irradiated with 84Kr ions of energy EKr = 394 MeV up to the fluence of 5 × 1012 ion/cm-2. The distribution of damage along the projected range of 84Kr ions in GaAs was investigated using selective chemical etching of a single crystal cleaved perpendicularly to the irradiated surface. The damage zone located under the Bragg peak of 84Kr ions was observed. Explanation of the observed effects based on possible processes of channeling of knocked target atoms (Ga and As) is proposed.
- Źródło:
-
Nukleonika; 2008, 53, 2; 77-82
0029-5922
1508-5791 - Pojawia się w:
- Nukleonika
- Dostawca treści:
- Biblioteka Nauki
Artykuł