Wszystkie pola: Krivaitė, G. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Energy Spectrum of InAs Quantum Dots in GaAs/AlAs Superlattices
Autorzy:: Nedzinskas, R.
Čechavičius, B.
Kavaliauskas, J.
Karpus, V.
Krivaitė, G.
Tamošiūnas, V.
Valušis, G.
Schrey, F.
Unterrainer, K.
Strasser, G.
Powiązania:: https://bibliotekanauki.pl/articles/1813385.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.67.Hc
Opis:: Photo- and contactless electroreflectance spectroscopies were applied to study optical properties and electronic structure of GaAs/AlAs superlattice systems with embedded InAs quantum dots. The observed interband transitions related to the quantum dot ground and excited states, as well as optical transitions in the combined system formed by the InAs wetting layer and GaAs/AlAs superlattice are discussed.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 975-978
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells
Autorzy:: Seliuta, D.
Čechavičius, B.
Kavaliauskas, J.
Krivaitė, G.
Grigelionis, I.
Balakauskas, S.
Valušis, G.
Sherliker, B.
Halsall, M.
Lachab, M.
Khanna, S.
Harrison, P.
Linfield, E.
Powiązania:: https://bibliotekanauki.pl/articles/1813214.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.-w
85.30.De
Opis:: The authors demonstrate selective detection of terahertz radiation employing berylliumδ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 909-912
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells
Autorzy:: Čechavičius, B.
Kavaliauskas, J.
Krivaitė, G.
Seliuta, D.
Širmulis, E.
Devenson, J.
Valušis, G.
Sherliker, B.
Halsall, M.
Steer, M.
Harrison, P.
Powiązania:: https://bibliotekanauki.pl/articles/2041764.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.-w
85.30.De
Opis:: We report on optical, photoreflectance and surface photovoltage, as well as terahertz photocurrent investigation of Be-doped GaAs/AlAs multiple quantum wells at room and liquid helium temperatures, respectively. From the Franz-Keldysh oscillations observed in photoreflectance spectra we determine built-in electric fields within the structure. Interband transition energies calculated by the transfer matrix method are in qualitative agreement with experimentally determined values for the samples having various, from 2×10$\text{}^{10}$ up to 2.5×10$\text{}^{12}$ cm$\text{}^{-2}$, Be doping densities. The photocurrent observed in the range of 5.4-7.3 THz we associate with photoionization of Be-acceptor states.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 328-332
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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