Wszystkie pola: Kozlov, D. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Charge Carrier Transport Properties in Single-Walled Carbon Nanotube Fibers
Autorzy:: Ksenevich, V.
Seliuta, D.
Martūnas, Z.
Kašalynas, I.
Valušis, G.
Galibert, J.
Kozlov, M.
Samuilov, V.
Powiązania:: https://bibliotekanauki.pl/articles/1813401.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.63.Fg
Opis:: Transport properties via temperature dependences of sample resistance R(T) and influence of microwave field of 10 GHz on the conductivity of the single-walled carbon nanotubes fibers are investigated. The R(T) dependences studied within 4.2-300 K can be well approximated by the Mott law for 3D variable range hopping below T=80 K and by typical law for fluctuation-induced tunnelling model within the temperature range 80-300 K. We associate the observed increase in the conductivity with microwave power by increase in hopping probability of the charge carriers between single-walled carbon nanotubes.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 1039-1042
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Quadratures of Pontryagin extremals for optimal control problems
Autorzy:: Rocha, E. A.
Torres, D. F.
Powiązania:: https://bibliotekanauki.pl/articles/969990.pdf
Data publikacji:: 2006
Wydawca:: Polska Akademia Nauk. Instytut Badań Systemowych PAN
Tematy:: Noether's theorem
Kozlov-Kolesnikov integrability
integrability by quadratures
optimal control
Opis:: We obtain a method to compute effective first integrals by combining Noether's principle with the Kozlov-Kolesnikov integrability theorem. A sufficient condition for the integrability by quadratures of optimal control problems with controls taking values on open sets is obtained. We illustrate our approach on some problems taken from the literature. An alternative proof of the integrability of the sub-Riemannian nilpotent Lie group of type (2,3,5) is also given.
Źródło:: Control and Cybernetics; 2006, 35, 4; 948-963
0324-8569
Pojawia się w:: Control and Cybernetics
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Terahertz Luminescence and Absorption under Impurity Breakdown in Quantum Wells and Strained Semiconductor Layers
Autorzy:: Vorobjev, L.
Firsov, D.
Shalygin, V.
Panevin, V.
Sofronov, A.
Ustinov, V.
Zhukov, A.
Egorov, A.
Andrianov, A.
Zakhar'in, A.
Ganichev, S.
Danilov, S.
Kozlov, D.
Powiązania:: https://bibliotekanauki.pl/articles/1813218.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.65.Fg
71.55.-i
71.55.Eq
73.21.Fg
73.61.Ey
78.55.Cr
78.66.-w
78.67.De
Opis:: We present the results of THz luminescence investigations in structures with Si-doped quantum wells and Be-doped GaAsN layers under strong lateral electric field. The peculiar property of these structures is the presence of resonant impurity states which arise due to dimensional quantization in quantum wells and due to built-in strain in GaAsN epilayers. The experimentally obtained THz emission spectra consist of the lines attributed to intra-center electron transitions between resonant and localized impurity states and to the electron transitions involving the subband states. Absorption of THz radiation and its temperature dependence was also studied in structure with tunnel-coupled quantum wells at equilibrium conditions and under electric field.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 925-928
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: THz Spectroscopy of Extremely Shallow Acceptors States in Ge/GeSi Multiple-Quantum-Well Heterostructures
Autorzy:: Aleshkin, V. Ya.
Erofeeva, Y. V.
Gavrilenko, V. I.
Ikonnikov, A. V.
Kozlov, D. V.
Kuznetsov, O. A.
Veksler, D. B.
Powiązania:: https://bibliotekanauki.pl/articles/2041651.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Cn
76.90.+d
78.67.De
Opis:: New shallow acceptor magnetoabsorption lines in THz range have been discovered under bandgap photoexcitation in strained Ge/GeSi multiple-quantum-well heterostructures. It is shown, both theoretically and experimentally, that the resonant absorption results from the photoionization of A$\text{}^{+}$-centers and from 1s → 2p$\text{}_{+}$-type transitions from the ground state of the barrier-situated A$\text{}^{0}$-centers into excited states in the 1st and 2nd electronic subbands. The shallowest discovered ground acceptor states (E$\text{}_{B}$≤0.5 meV) are attributed to the "barrier-spaced" acceptors (a hole bound with an acceptor ion in the neighboring Ge quantum well).
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 137-141
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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