Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "GaSb" wg kryterium: Wszystkie pola

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 43
Tytuł:
Modyfikacja technologii polerowania płytek GaSb stosowanych jako podłoża w procesie epitaksji
Modification of mechanical-chemical treatment technology of epi-ready GaSb substrates
Autorzy:
Smoczyński, D.
Powiązania:
https://bibliotekanauki.pl/articles/192242.pdf
Data publikacji:
2014
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
GaSb
obróbka mechaniczno-chemiczna
chropowatość
utlenianie
epitaksja
mechanical - chemical treatment
roughness
oxidation
epitaxy
Opis:
Celem pracy była modyfikacja technologii obróbki mechaniczno – chemicznej powierzchni płytek antymonku galu (GaSb), oferowanych przez Instytut Technologii Materiałów Elektronicznych w celu uzyskania powierzchni o jakości epi-ready, spełniającej wymagania stawiane płytkom podłożowym stosowanym w procesie epitaksji. Zbadano wpływ sposobu trawienia płytek na stopień zanieczyszczenia powierzchni. Stwierdzono, że trawienie w kwasie nieorganicznym ma wpływ na czystość powierzchni. Wymieniono wosk polerski rozpuszczalny w trójchloroetylenie na wosk rozpuszczalny w alkoholu. Wyeliminowano etap mycia płytek w parach wrzącego alkoholu mogących pozostawiać smugi. Wprowadzenie powyższych modyfikacji zmniejszyło gęstość zanieczyszczeń oraz grubość powłoki tlenkowej. Znacząco zmniejszono też chropowatość powierzchni, która dyskwalifikowała podłoża jako epi-ready.
The purpose of this study was to modify the mechanical-chemical treatment technology of epi-ready GaSb substrates produced at the Institute of Electronic Materials Technology. Another aim was to minimize and eliminate the sources of oxidation and contamination generated on the surface of wafers at the washing stage. The effect of substrate etching on the amount of residual contaminants remaining on the surface was investigated. It was found that etching in an inorganic acid has an influence on the purity of the surface. Polishing wax soluble in trichloroethylene was replaced by wax soluble in alcohol. The stage of substrate washing in boiling alcohol was skipped, because it was likely to leave streaks on the surface. As a result of these modifications the thickness of oxide films, which substantially increased the surface roughness and disqualified the use of wafers as epi-ready substrates, was succesfully reduced.
Źródło:
Materiały Elektroniczne; 2014, T. 42, nr 2, 2; 5-12
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface treatment of GaSb and related materials for the processing of mid-infrared semiconductor devices
Autorzy:
Papis-Polakowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/378417.pdf
Data publikacji:
2006
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Tematy:
semiconductor devices
mid-infrared wavelenth range
GaSb
Opis:
Various chemical treatments of GaSb and related compounds has been studied with the aim to develop procedures of polishing of GaSb substrates, preparation of their surfaces for deposition of metal and dielectric films, for liquid phase epitaxial growth, and finally fabrication of passivating coatings on surfaces of GaSb and its alloys. A broad spectrum of surface characterisation techniques has been used to analyse morphology of the surface and its chemical composition after each of the treatments applied. This allowed us to elaborate a complete set of technological procedures necessary for the fabrication of the efficient GaSb- based photo- and light emitting diodes operating in the midi-infrared wavelength range.
Źródło:
Electron Technology : Internet Journal; 2005-2006, 37/38, 4; 1-34
1897-2381
Pojawia się w:
Electron Technology : Internet Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The growth and characterisation of type I GaSb/AlSb superlattice with a thin GaSb layer
Autorzy:
Fokt, Maciej
Jasik, Agata
Sankowska, Iwona
Mączko, Herbert S.
Paradowska, Karolina M.
Czuba, Krzysztof
Powiązania:
https://bibliotekanauki.pl/articles/27315692.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
type I AlSb/GaSb superlattice
8-band k·p perturbation theory
nextnano simulations
AlSb layer degradation
Opis:
This paper presents results of the characterisation of type I GaSb/AlSb superlattices (SLs) with a thin GaSb layer and varying thicknesses of an AlSb layer. Nextnano software was utilized to obtain spectral dependence of absorption and energy band structure. A superlattice (SL) with an energy bandgap of ~ 1.0 eV and reduced mismatch value was selected for experimental investigation. SLs with single (sample A) and double (sample B) AlSb barriers and a single AlSb layer (sample C) were fabricated using molecular beam epitaxy (MBE). Optical microscopy, high-resolution X-ray diffractometry, and photoluminescence were utilized for structural and optical characterisation. The presence of satellite and interference peaks in diffraction curves confirms the high crystal quality of superlattices. Photoluminescence signal associated with the superlattice was observed only for sample B and contained three low-intensity peaks: 1.03, 1.18, and 1.25 eV. The first peak was identified as the value of the energy bandgap of the SL. Other two peaks are related to optical transitions between defect states located at the interface between the SL and the top AlSb barrier. The time-dependent changes observed in the spectral characteristics are due to a modification of the SL/AlSb interface caused by the oxidation and hydroxylation of the AlSb layer.
Źródło:
Opto-Electronics Review; 2023, 31, 4; art. no. e147912
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Four-point probe resistivity noise measurements of GaSb layers
Autorzy:
Ciura, L.
Kolek, A.
Smoczyński, D.
Jasik, A.
Powiązania:
https://bibliotekanauki.pl/articles/201503.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
low frequency noise
GaSb noise
noise measurements
resistance noise calculation
Opis:
This paper concerns measurements and calculations of low frequency noise for semiconductor layers with four-probe electrodes. The measurements setup for the voltage noise cross-correlation method is described. The gain calculations for local resistance noise are performed to evaluate the contribution to total noise from different areas of the layer. It was shown, through numerical calculations and noise measurements, that in four-point probe specimens, with separated current and voltage terminals, the non-resistance noise of the contact and the resistance noise of the layer can be identified. The four-point probe method is used to find the low frequency resistance noise of the GaSb layer with a different doping type. For n-type and p-type GaSb layers with low carrier concentrations, the measured noise is dominated by the non-resistance noise contributions from contacts. Low frequency resistance noise was identified in high-doped GaSb layers (both types). At room temperature, such resistance noise in an n-type GaSb layer is significantly larger than for p-type GaSb with comparable doping concentration.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 1; 135-140
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design
Autorzy:
Gomółka, E.
Markowska, O.
Kopytko, M.
Kowalewski, A.
Martyniuk, P.
Rogalski, A.
Rutkowski, J.
Motyka, M.
Krishna, S.
Powiązania:
https://bibliotekanauki.pl/articles/201992.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
InAs/GaSb type-II superlattices
infrared detectors
barrier detectors
nBn detector
p-i-n detector
InAs
GaSb
detektory podczerwieni
detektor bariery
detektor nBn
detektory p-i-n
Opis:
We present an investigation of optical and electrical properties of mid-wavelength infrared (MWIR) detectors based on InAs/GaSb strained layer superlattices (SLs) with nBnN and pBnN design. The temperature-dependent behavior of the bandgap was investigated on the basis of absorption measurements. A 50% cut-off wavelength of around 4.5 μm at 80 K and increase of up to 5.6 μm at 290 K was found. Values of Varshni parameters, zero temperature bandgap E0 and empirical coefficients α and β were extracted. Arrhenius plots of dark currents of nBnN and pBnN detectors were compared with the p-i-n design. Dark current density reduction in nBnN and pBnN detectors is observed in comparison to the p-i-n device. This shows a suppression of Shockley-Read-Hall (SRH) processes by means of introducing barrier architecture.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2018, 66, 3; 317-323
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Performance analysis of an InAs/GaSb superlattice barrier photodetector covering the full LWIR spectral domain
Autorzy:
Alchaar, Rodolphe
Rodriguez, Jean-Baptiste
Höglund, L.
Naureen, Shagufta
Costard, Eric
Christol, Philippe
Powiązania:
https://bibliotekanauki.pl/articles/1818240.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
barrier photodetector
InAs/GaSb type-2 superlattice
long wavelength infrared
performance analysis
Opis:
In this paper, we present the electrical and electro-optical characterizations of an InAs/GaSb type-2 superlattice barrier photodetector operating in the full longwave infrared spectral domain. The fabricated detectors exhibited a 50% cut-off wavelength around 14 μm at 80 K and a quantum efficiency slightly above 20%. The dark current density was of 4.6×10⁻² A/cm² at 80 K and a minority carrier lateral diffusion was evaluated through dark current measurements on different detector sizes. In addition, detector spectral response, its dark current-voltage characteristics and capacitance-voltage curve accompanied by electric field simulations were analyzed in order to determine the operating bias and the dark current regimes at different biases. Finally, dark current simulations were also performed to estimate a minority carrier lifetime by comparing experimental curves with simulated ones.
Źródło:
Opto-Electronics Review; 2020, 28, 3; 164--170
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Performance analysis of an InAs/GaSb superlattice barrier photodetector covering the full LWIR spectral domain
Autorzy:
Alchaar, R.
Rodriguez, J.-B.
Höglund, L.
Naureen, S.
Costard, E.
Christol, P.
Powiązania:
https://bibliotekanauki.pl/articles/1818247.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
barrier photodetector
InAs/GaSb type-2 superlattice
long wavelength infrared
performance analysis
Opis:
In this paper, we present the electrical and electro-optical characterizations of an InAs/GaSb type-2 superlattice barrier photodetector operating in the full longwave infrared spectral domain. The fabricated detectors exhibited a 50% cut-off wavelength around 14 μm at 80 K and a quantum efficiency slightly above 20%. The dark current density was of 4.6×10⁻² A/cm² at 80 K and a minority carrier lateral diffusion was evaluated through dark current measurements on different detector sizes. In addition, detector spectral response, its dark current-voltage characteristics and capacitance-voltage curve accompanied by electric field simulations were analyzed in order to determine the operating bias and the dark current regimes at different biases. Finally, dark current simulations were also performed to estimate a minority carrier lifetime by comparing experimental curves with simulated ones.
Źródło:
Opto-Electronics Review; 2020, 28, 3; 164--170
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative study of the molecular beam epitaxial growth of InAs/GaSb superlattices on GaAs and GaSb substrates
Autorzy:
Benyahia, D.
Kubiszyn, Ł.
Michalczewski, K.
Kębłowski, A.
Martyniuk, P.
Piotrowski, J.
Rogalski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1055151.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
68.65.Cd
81.05.Ea
61.05.cp
Opis:
Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 322-324
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared Spectroscopy of Light Impurities in GaSb
Autorzy:
Kaczor, P.
Kaliński, Z.
Jakieła, R.
Powiązania:
https://bibliotekanauki.pl/articles/2043723.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
63.20.Pw
Opis:
In our work we study the doping behaviour of sulphur in Czochralski grown GaSb by means of the high resolution Fourier transform infrared spectroscopy and the secondary ion mass spectroscopy. We have revealed that the sulphur impurity forms an effective mass like donor state bound to the L-minimum of the conduction band. From the far infrared spectrum of this donor we derive the effective band masses of the L band minimum. We also observe local vibrational modes related to the arsenic and phosphorus isoelectronic impurities. From the nearest neighbour isotope splittings of these modes we conclude that the arsenic impurity occupies a tetrahedral substitutional site and the phosphorus impurity - a low symmetry lattice site.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 711-715
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High performance type-II InAs/GaSb superlattice infrared photodetectors with a short cut-off wavelength
Autorzy:
Delmas, Marie
Ramos, David
Ivanov, Ruslan
Žurauskaitė, Laura
Evans, Dean
Rihtnesberg, David
Almqvist, Susanne
Becanovic, Smilja
Costard, Eric
Höglund, Linda
Powiązania:
https://bibliotekanauki.pl/articles/2204225.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detectors
short-wavelength infrared
InAs/GaSb superlattice
type-II superlattice
Opis:
This work investigates the potential of InAs/GaSb superlattice detectors for the shortwavelength infrared spectral band. A barrier detector structure was grown by molecular beam epitaxy and devices were fabricated using standard photolithography techniques. Optical and electrical characterisations were carried out and the current limitations were identified. The authors found that the short diffusion length of ~1.8 µm is currently limiting the quantum efficiency (double-pass, no anti-reflection coating) to 43% at 2.8 µm and 200 K. The dark current density is limited by the surface leakage current which shows generation-recombination and diffusion characters below and above 195 K, respectively. By fitting the size dependence of the dark current, the bulk values have been estimated to be 6.57·10ˉ⁶ A/cm² at 200 K and 2.31·10ˉ⁶ A/cm² at 250 K, which is only a factor of 4 and 2, respectively, above the Rule07.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144555
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electroepitaxial Growth of GaSb and AlGaSb Thick Epitaxial Layers
Autorzy:
Zytkiewicz, Z. R.
Dobosz, D.
Powiązania:
https://bibliotekanauki.pl/articles/1934052.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Df
81.10.Dn
Opis:
Semi-bulk epitaxial layers of GaSb and AlGaSb up to 3 and 1 mm thick, respectively, were successfully grown by the liquid phase electroepitaxy on GaSb substrates. The growth procedure allowed us to achieve high crystallographic perfection as well as compositional uniformity of ternary layers.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 965-968
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hole Scattering in GaSb: Scattering on Space Charge Regions Versus Dipole Scattering
Autorzy:
Pődör, B.
Powiązania:
https://bibliotekanauki.pl/articles/2044528.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Fr
72.20.Dp
72.80.Ey
Opis:
Hole concentration and mobility were investigated by Hall measurements in nominally undoped p-type GaSb in the temperature range from 77 to 300 K. The dependence of the thermal ionization energy of native acceptors on the acceptor centre concentration and on the compensation degree was determined. The temperature dependence of the hole mobility was analyzed using a heuristic semi-empirical model as well as using a phenomenological two-hole band model. Space charge scattering and/or dipole scattering described with a mobility contribution with a~ T$\text{}^{-1}\text{}^{/}\text{}^{2}$ like temperature dependence dominated the hole mobility in the investigated temperature range.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 837-844
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two Charge States of Sulphur in GaSb
Autorzy:
Dobaczewski, L.
Kaczor, P.
Karczewski, G.
Poole, I.
Powiązania:
https://bibliotekanauki.pl/articles/1879480.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.70.+q
78.50.Ge
71.55.Eq
Opis:
Results of the isothermal DLTS, photoconductivity, and photo-Hall measurements, showed that the sulphur-related center in GaSb, being a DX-type defect, has two charge states.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 133-136
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Electrical Properties of Bulk GaSb and AlGaSb
Autorzy:
Kaczor, P.
Żytkiewicz, Z.
Dobosz, D.
Kaliński, Ż.
Powiązania:
https://bibliotekanauki.pl/articles/1858188.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.Pw
61.72.Vv
71.55.Eq
Opis:
Optical measurements of bulk GaSb:S reveal the structure of the lattice two phonon absorption and acceptor-valence band transitions. A sulphur related local vibrational modes and several bands related to the optical transitions from the ground state of the acceptor level are observed. A comparison of transport and optical measurements for GaSb:Te and AlGaSb:Te shows that in the alloy it is easier to obtain high concentrations of the electrically active Te impurity.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 763-766
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Recombination nearby N-n GaSb/GaInAsSb Staggered Lineup Heterojunction
Autorzy:
Popov, A. A.
Imenkov, A. N.
Kolchanova, N. M.
Yakovlev, Yu. P.
Piotrowski, T. T.
Powiązania:
https://bibliotekanauki.pl/articles/1877143.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Nz
Opis:
The recombination nearby large band-offset staggered lineup N-GaSb/n-GaInAsSb heterojunction was investigated by means of the electroluminescence and carrier lifetime measurements. It was demonstrated that the nature of recombination, tuning rate as well as relation between radiative and non-radiative recombination strongly depend on the N-n band-offset and that its increase improves the carrier localization on the N-n interface.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 559-562
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 43

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies