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    Wyświetlanie 1-8 z 8
    Tytuł:
    Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments
    Autorzy:
    Andreev, V.
    Bondarenko, G.
    Maslovsky, V.
    Stolyarov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1381776.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    73.40.Gk
    Opis:
    The influence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) film in the structures with the two-layer gate dielectric $SiO_2$-PSG under high-field Fowler-Nordheim electron injection can be used for the characteristics modification of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are offered to use for improving the reliability and finding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric films of MOS-structures due to structural changes in the $SiO_2$ film and $Si-SiO_2$ interface.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1371-1373
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment
    Autorzy:
    Andreev, V.
    Bondarenko, G.
    Maslovsky, V.
    Stolyarov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402221.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    73.40.Gk
    Opis:
    Methods of modification of gate dielectrics of the MOS structures by high-field electron injection and arc plasma jet treatment were studied. It is possible to use them for correction of parameters, decreasing defects number and increasing reliability of MOS devices. It was found that the negative charge accumulated in the film of the phosphorus-silicate glass of the MOS structures with the two-layer gate dielectric SiO₂-phosphorus-silicate glass under the high-field electron injection can be used for modification of devices with the same structures. It is shown that the injection-thermal treatment allows to find and exclude MOS structures with defects of isolation and charge defects. Arc plasma jet treatment was found to improve characteristics of the MOS devices. These treatments increase injection and radiation resistance of the gate dielectric by creating the needed density of electron traps in the bulk of SiO₂ film.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 887-890
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments
    Autorzy:
    Andreev, D.
    Bondarenko, G.
    Andreev, V.
    Maslovsky, V.
    Stolyarov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030209.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Ht
    72.20.Jv
    73.20.At
    73.40.Qv
    73.40.Ty
    77.22.Jp
    77.55.-g
    Opis:
    Methods to modify gate dielectrics of MIS structures by irradiation treatments and high-field electron injection into dielectric are considered. In addition, distinctive features of these methods used to correct parameters of MIS devices are studied. It was found out that negative charge, accumulating in the thin film of phosphosilicate glass (PSG) of the MIS structure having a two-layer gate dielectric SiO_2-PSG under the high-field injection or during the irradiation treatment can be used to correct the threshold voltage to improve the charge stability and raise the voltage of breakdown for the MIS devices. It is proved that the density of electron traps rises with the increasing thickness of the PSG film. In this paper a method to modify electrophysical characteristics of MIS structures by the high-field tunnel injection of electrons into the gate dielectric under the mode of controlled current stress is proposed. The method allows to monitor changing of MIS structure parameters directly during the modification process.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 245-248
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Geomechanics of interference between the operation modes of mine working support elements at their loading
    Autorzy:
    Bondarenko, V.
    Kovalevska, I.
    Symanovych, G.
    Sotskov, V.
    Barabash, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/89160.pdf
    Data publikacji:
    2018
    Wydawca:
    Politechnika Wrocławska. Wydział Geoinżynierii, Górnictwa i Geologii. Instytut Górnictwa
    Tematy:
    geomechanics
    mine workings
    stress-strain state
    computer simulation
    finite elements
    frame support
    roof-bolting systems
    Opis:
    The problem has been studied of reducing the materials consumption of a combined support in extraction mine workings and increasing their stability in a zone of stope works influence when reused mining of flat-lying coal seams at adjacent mining site. The mechanism has been developed of rock pressure manifestation in the vicinity of mine working and the loading of its support elements on the basis of the following key positions: the formation of zones of unloading and increased rock pressure around the mine working; the formation of areas of weakened and broken rocks, their interaction with support and holistic rock massif; development of stratification along the planes of weakening by thickness of a lithological variety and along the planes of bedding the adjacent lithotypes; partitioning of rock layer into blocks by fractures, by perpendicular planes of weakening and bedding planes, and other factors. The specific tasks have been solved by the finite element method according to the four-parameter spatial optimization scheme of the support interaction with a rock massif. The patterns have been determined of connection between the rational operation modes of mine working support elements and basic geomechanical factors, affecting significantly on the loading of these elements, as well as their interaction with different deformation and force characteristics.
    Źródło:
    Mining Science; 2018, 25; 219-235
    2300-9586
    2353-5423
    Pojawia się w:
    Mining Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    KEr(MoO$\text{}_{4}$)$\text{}_{2}$ and CsDy(MoO$\text{}_{4}$)$\text{}_{2}$ - Low-Dimensional Ising Magnets
    Autorzy:
    Kačmár, M.
    Orendáčová, A.
    Čizmár, E.
    Horváth, D.
    Orendáč, M.
    Bondarenko, V.
    Anders, A. G.
    Feher, A.
    Jaščur, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2013657.pdf
    Data publikacji:
    2000-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.40.Cx
    75.10.Hk
    75.40.Mg
    Opis:
    In the present work the behaviour of cluster excitations in magnetic field, B, parallel to the easy axis was experimentally studied by the measurements of KEr(MoO$\text{}_{4}$)$\text{}_{2}$ and CsDy(MoO$\text{}_{4}$)$\text{}_{2}$ specific heat, C, vs. B dependence studied at a constant temperature. Corresponding Monte Carlo simulations of C revealed that despite of the fact that the Ising exchange-coupling models proved useful for a sufficient description of the specific heat of these dipolar systems in B=0, the analysis of current experimental data requires a partial renormalization of exchange-coupling constants previously obtained from B=0 analysis. The influence of crystal field effects and long-range character of spin correlations is discussed.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 5; 807-810
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Developing measures to eliminate of hydrate formation in underground gas storages
    Autorzy:
    Volovetskyi, V. B.
    Doroshenko, Ya. V.
    Bugai, A. O.
    Kogut, G. M.
    Raiter, P. M.
    Femiak, Y. M.
    Bondarenko, R. V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2172156.pdf
    Data publikacji:
    2022
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    well
    flowline
    hydrate formation
    local constraint
    regulating choke
    studnia
    powstawanie hydratów
    współczynnik ograniczenia
    dławik
    Opis:
    Purpose The objective of this article is the analysys of methods for preventing and eliminating hydrates formations, classifying them and choosing the best ones for use in underground gas storage facilities. Comprehensive measures for the stable operation of gas storage facilities in the presence of conditions for the occurrence of hydrates formations were developed. Zones, being potentially prone to the hydrates formation during the gas storage facilities operation were identified. Design/methodology/approach The operational parameters of gas storage wells during gas withdrawal are analyzed. The identified wells were operated under difficult conditions due to the deposition of hydrates on the wellheads, in flowlines and process equipment of gas storage facilities. The places of the highest hydrates accumulation on underground gas storages were determined: from the bottomhole of wells to the gas purification unit of the gas gathering station. Hydrate-prone zones were identified by computational fluid dynamic (CFD) modeling at the location of regulating choke installations in underground gas storage facilities. Findings The zones of the greatest hydrates accumulation on underground gas storages were determined: from the bottomhole of wells to the gas purification unit of the gas gathering station. The analysis of the methods used in gas storage facilities of Ukraine to prevent and eliminate hydrates formation was out. A set of measures was proposed to prevent the hydrates formation in storage facilities to ensure their stable operation. Based on the Euler approach (Mixture model) by CFD modeling, zones prone to hydrates formation were determined at the installation site of regulating chokes in underground gas storages. The influence of the degree of fittings opening on the location of potential zones prone to hydrates formation was estimated. The gas-dynamic processes in the internal cavity of the gas pipeline at the installation site of the control fittings were studied and their influence on the distribution of bulk particles of the gaseous and liquid phases was established. Based on the studies performed, it was recommended to change periodically the mode of well operation for a certain time by opening or closing the regulating choke under favorable conditions for the formation of hydrates, especially at low ambient temperatures. Research limitations/implications The obtained results of experimental studies and calculations showed that in order to solve the problem of hydrates formation at gas storage facilities, it is advisable to use diverse measures through the introduction of modern intelligent systems for monitoring and controlling the technological process. Further refinement of the algorithm of the proposed monitoring and control system with its approbation in production was provided. Practical implications The results of the experimental studies and CFD modeling carried out allowed providing a more reasonable approach to the application of various available methods and measures to prevent hydrates formation in underground gas storage facilities. This approach made it possible to develop new effective ways and measures to prevent such complication. Originality/value Based on the conducted experimental studies and modeling, the major zones prone to hydrates formation in underground gas storages were determined. The developed measures will allow timely detection and prevention of hydrates formation at gas storage facilities are original.
    Źródło:
    Journal of Achievements in Materials and Manufacturing Engineering; 2022, 111, 2; 64--77
    1734-8412
    Pojawia się w:
    Journal of Achievements in Materials and Manufacturing Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modeling of the behavior of in - vessel mirrors for ITER with ECR plasma discharges
    Autorzy:
    Voitsenya, V. S.
    Bardamid, A. F.
    Belyaeva, A. I.
    Bondarenko, V. N.
    Davis, J. W.
    Konovalov, V. G.
    Mukhin, E. E.
    Razdobarin, A. G
    Ryzhkov, I. V.
    Shapoval, A. N.
    Shtan, A. F.
    Skoryk, O. A.
    Solodovchenko, S. I.
    Powiązania:
    https://bibliotekanauki.pl/articles/147820.pdf
    Data publikacji:
    2012
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    ECR plasma
    mirrors for plasma diagnostics in ITER
    structure
    sputtering
    chemical erosion
    Opis:
    The main experimental results related to the problems associated with in-vessel mirrors in ITER obtained with the DSM-2 facility at the Kharkov Institute of Plasma Physics over the past few years are described and discussed. Mirrors made from various polycrystalline (Be, Al, SS, Cu, Mo, Ta, W) and single crystal (Ni, SS, Mo, W) metals, metal films (Be, Cu, Mo, Rh) on different metal substrates (V, SS, Cu, Mo), and an amorphous alloy (ZrTiCuNiBe) have been studied. In addition, the behavior of protective oxide coatings under plasma bombardment has also been analyzed.
    Źródło:
    Nukleonika; 2012, 57, 2; 157-162
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Functional model for the synthesis of nanostructures of the given quality level
    Autorzy:
    Suchikova, Y.O.
    Kovachov, S.S.
    Shishkin, G.O.
    Pimenov, D.O.
    Lazarenko, A.S.
    Bondarenko, V.V.
    Bogdanov, I.T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2175807.pdf
    Data publikacji:
    2021
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    functional model
    electrochemical etching
    quality level
    semiconductors
    nanostructures
    IDEF0 methodology
    model funkcjonalny
    trawienie elektrochemiczne
    poziom jakości
    półprzewodniki
    nanostruktury
    metodologia IDEF0
    Opis:
    Purpose: The aim of this paper is to develop a functional model for the synthesis of nanostructures of the given quality level, which will allow to effectively control the process of nanopatterning on the surface of semiconductors with tunable properties. Design/methodology/approach: The paper uses the IDEF0 methodology, which focuses on the functional design of the system under study and describes all the necessary processes with an accuracy sufficient for an unambiguous modelling of the system's activity. Based on this methodology, we have developed a functional model for the synthesis of nanostructures of the given quality level and tested its effectiveness through practice. Findings: The paper introduces a functional model for the synthesis of nanostructures on the surface of the given quality level semiconductors and identifies the main factors affecting the quality of nanostructures as well as the mechanisms for controlling the formation of porous layers with tunable properties. Using the example of etching single-crystal indium phosphide electrochemically in a hydrochloric acid solution, we demonstrate that the application of the suggested model provides a means of forming nanostructures with tunable properties, assessing the quality level of the nanostructures obtained and bringing the parameters in line with the reference indicators at a qualitatively new level. Research limitations/implications: Functional modelling using the IDEF0 methodology is widely used when process control is required. In this study it has been applied to control the synthesis of nanostructures of the given quality level on the surface of semiconductors. However, these studies require continuation, namely, the establishment of correlations between the technological and resource factors of synthesis and the acquired properties of nanostructures. Practical implications: This study has a significant practical effect. Firstly, it shows that functional modelling can reduce the time required to form large batches of the given quality level nanostructures. This has made it possible to substantiate the choice of the initial semiconductor parameters and nanostructure synthesis modes in industrial production from the theoretical and empirical perspective. Secondly, the presented methodology can be applied to control the synthesis of other nanostructures with desired properties and to reduce the expenses required when resources are depleted and the cost of raw materials is high. Originality/value: This paper is the first to apply the IDEF0 methodology to control the given quality nanostructure synthesis. This paper will be of value to engineers who are engaged in the synthesis of nanostructures, to researchers and scientists as well as to students studying nanotechnology.
    Źródło:
    Archives of Materials Science and Engineering; 2021, 107, 2; 72--84
    1897-2764
    Pojawia się w:
    Archives of Materials Science and Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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