Wszystkie pola: 81.65.Rv - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Characterisation of (100) GaSb Passivated Surface Using Next Generation 3D Digital Microscopy
Autorzy:: Papis-Polakowska, E.
Leonhardt, E.
Kaniewski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1198429.pdf
Data publikacji:: 2014-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.60.Pb
64.75.Yz
81.65.Rv
Opis:: (100) GaSb surface was modified by self-assembled superficial layer of organic molecules by wet chemical process. Hexadecanethiol (HDT) was the choice as modifier. The treated GaSb surface, whose quality affects the morphology of the resulting modified GaSb, was investigated by 3D digital microscopy. The structural study were carried out quickly, non-destructively and comprehensively with using the next generation 3D HIROX KH-8700 Digital Microscope.
Źródło:: Acta Physica Polonica A; 2014, 125, 4; 1052-1055
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: PeakForce Tapping Technique for Characterization of Thin Organic Passivating Layers
Autorzy:: Papis-Polakowska, E.
Radkowski, B.
Lesko, S.
Kaniewski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1198431.pdf
Data publikacji:: 2014-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.79.Lh
64.75.Yz
81.65.Rv
Opis:: The PeakForce Tapping technique was used for study of GaAs and GaSb surfaces treated by hexadecanethiol (HDT) - the sensitive self-assemble compound. The results of both surface morphology control and electrical properties characterization have been presented.
Źródło:: Acta Physica Polonica A; 2014, 125, 4; 1056-1060
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Simulations of Si and $SiO_{2}$ Etching in $SF_{6}+O_{2}$ Plasma
Autorzy:: Knizikevičius, R.
Powiązania:: https://bibliotekanauki.pl/articles/1538692.pdf
Data publikacji:: 2010-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 52.77.Bn
81.65.Rv
Opis:: The plasma chemical etching of Si and $SiO_{2}$ in $SF_{6}+O_{2}$ plasma is considered. The concentrations of plasma components are calculated by fitting the experimental data. The derived concentrations of plasma components are used for the calculation of Si and $SiO_{2}$ etching rates. It is found that the reaction probabilities of F atoms with Si atoms and $SiO_{2}$ molecules are equal to ε = (8.75 ± 0.41) × $10^{-3}$ and ε = (7.18 ± 0.45) × $10^{-5}$, respectively. The influence of $O_{2}$ addition to $SF_{6}$ plasma on the etching rate of Si is determined.
Źródło:: Acta Physica Polonica A; 2010, 117, 3; 478-483
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: LT-InGaAs Layer Grown for Near Surface SESAM Application
Autorzy:: Jasik, A.
Muszalski, J.
Kosmala, M.
Pierściński, K.
Powiązania:: https://bibliotekanauki.pl/articles/1807666.pdf
Data publikacji:: 2009-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.jj
68.55.ag
68.65.Ac
81.15.Hi
81.65.Rv
Opis:: We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs using semiconductor saturable absorber mirror (SESAM). With the nonsaturable losses of 1.94% and the modulation depth of 1.48% the self-starting and stable mode-locking was observed. The nonsaturable losses are mainly related to As_{Ga}^{0}-CB transitions in InGaAs QW absorbing layer and low temperature defects. Low temperature defects are eliminated by using higher growth temperature and lower ratio of group V to group III beam equivalent pressure than typically used. The InGaAs layer was grown by molecular beam epitaxy at the temperature as high as 420°C, under the V/III ratio as low as 10. No annealing was performed.
Źródło:: Acta Physica Polonica A; 2009, 116, S; S-56-S-59
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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