Wszystkie pola: 78.60.Fi - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Anisotropic Transport of Electrons in ZnS
Autorzy:: Xu, Zheng
Powiązania:: https://bibliotekanauki.pl/articles/2037277.pdf
Data publikacji:: 2004-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.60.Fi
Opis:: We study the anisotropic electronic transport property of ZnS-type thin-film electroluminescence displays by Monte Carlo simulation. The simulation contains an accurate and efficient description of the anisotropic band structure and various scattering mechanisms like phonon scattering and impurity scattering. The electronic transport processes in three devices with different ZnS-layer orientations are simulated. From the obtained energy population and average energy of electrons, we conclude that the 〈100〉 direction is the best for electron acceleration under high electric field. We propose that new attempts in using this direction for ZnS-layer deposition will result in an improvement of the performance of thin-film electroluminescence displays.
Źródło:: Acta Physica Polonica A; 2004, 105, 4; 383-388
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Method of Determination of Mn Concentration in ZnS Based on Kinetic Measurements of Luminescence
Autorzy:: Chimczak, E.
Bertrandt-Żytkowiak, M.
Powiązania:: https://bibliotekanauki.pl/articles/1886622.pdf
Data publikacji:: 1991-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.60.Fi
Opis:: A method of determination of Mn concentration in ZnS:Mn based on existence of two manganese kinetic components is proposed. In the method the manganese concentration is determined by lifetime and initial intensity of electroluminescence measurements. The results of the measurements are compared with statistical distributions of single Mn$\text{}^{2+}$ ions and Mn$\text{}^{2+}$ -Mn$\text{}^{2+}$ pairs in hexagonal ZnS.
Źródło:: Acta Physica Polonica A; 1991, 79, 2-3; 307-310
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Preparation and Luminescent Properties of ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ Heterojunction
Autorzy:: Le Van, Khoi
Dobrowolski, W.
Witkowska, B.
Mycielski, A.
Galązka, R. R.
Nguyen, Khoi
Powiązania:: https://bibliotekanauki.pl/articles/1872527.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.60.Fi
Opis:: ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ heterojunctions were prepared by vapor-transport epitaxy of ZnTe on In-doped Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ (x = 0.05, y = 0.03) single crystalline substrate in vacuum. At temperatures lower than 120 K the infrared and red electroluminescence were observed from the ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ diode with forward current density in the range 0.003-4.0 A/cm$\text{}^{2}$.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 325-328
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Mechanism of Carrier Heating in High Electric Field Electroluminescence Devices
Autorzy:: Dedulewicz, S.
Godlewski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1924197.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.10.-d
78.60.Fi
Opis:: The mechanism of carrier heating in ZnS-based electroluminescence devices is discussed. We show that carrier acceleration by an applied electric field is at 300 K not a loss-free (ballistic carriers) process. Even for large carrier energies (about 2.5 eV) inelastic scattering on polar optical phonons dominates over elastic scattering on acoustic phonons and ionized impurities.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 865-867
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Nanocrystal- and Dislocation-Related Luminescence in~Si Matrix with InAs Nanocrystals
Autorzy:: Komarov, F.
Vlasukova, L.
Milchanin, O.
Mudryi, A.
Zuk, J.
Pyszniak, K.
Kulik, M.
Powiązania:: https://bibliotekanauki.pl/articles/1504152.pdf
Data publikacji:: 2011-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.-w
78.60.Fi
Opis:: We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500°C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050°C. A part of the samples implanted at 25°C was additionally exposed to $H_2^{+}$ ions (100 keV, 1.2 × $10^{16} cm^{-2}$ in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2-80 nm and create various concentration and distribution of different types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.
Źródło:: Acta Physica Polonica A; 2011, 120, 1; 204-207
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: Some New Aspects of Porous Silicon
Autorzy:: Fishman, G.
Romestain, R.
Powiązania:: https://bibliotekanauki.pl/articles/1872323.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.50.Ge
78.55.Hx
78.60.Fi
Opis:: We recall the geometry of porous silicon and the order of magnitude of some characteristic parameters. We give a brief review of optical experiments and their different interpretations. We focus on quantitative interpretations and show that an essential concept is confinement in a quantum wire or box. In particular, the exchange energy of electron-hole pairs correlated by Coulomb interaction inside a quantum box explains results obtained between 4 I{ and room temperature. Nevertheless, the large shift of the main luminescence line for similar porous silicon but different electrolytes cannot be explained by quantum confinement alone and has to be accounted for by the difference between the dielectric constants inside and outside the porous silicon. A brief account of electroluminescence experiments is also given.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 285-293
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Linear Polarized Terahertz Emission under Electrical Breakdown of a Shallow Acceptor in Uniaxially Deformed Germanium
Autorzy:: Andrianov, A.
Zakhar'in, A.
Yassievich, I.
Zinov'ev, N.
Powiązania:: https://bibliotekanauki.pl/articles/1813201.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.57.Hm
78.60.Fi
78.67.De
Opis:: We report on polarization spectra of spontaneous terahertz electroluminescence from uniaxially deformed Ge(Ga). At compressive pressure of about 3±0.3 kbar in the [111] direction, near the impurity breakdown threshold, the linear polarization degree attains ≈80-90% for the main lines of the terahertz emission.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 863-867
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Scanning Tunneling Spectroscopy and Luminescent Properties of ZnS:Mn,Cu,Cl Thin Films
Autorzy:: Neunert, G.
Kamiński, M.
Susła, B.
Dunaj, T.
Chimczak, E.
Bertrandt-Żytkowiak, M.
Powiązania:: https://bibliotekanauki.pl/articles/2036945.pdf
Data publikacji:: 2003
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.60.Fi
78.66.Hf
68.37.Ef
Opis:: Electrical and luminescent properties of ZnS:Mn,Cu,Cl thin films were investigated. Combined both studies: scanning tunneling microscopy and scanning tunneling spectroscopy were made. The current and differential conductance versus applied voltage were measured for the ZnS:Mn,Cu,Cl thin films. Additionally, the spectral and kinetic properties of the electroluminescent cells based on the ZnS:Mn,Cu,Cl thin films were measured. The maximum of the electroluminescence lies at 586 nm. The electroluminescence was excited by rectangular wave voltage pulses with pulse length from 1μs to 1 ms. It was shown that time dependence of the electroluminescence is well explained assuming energy transfer between monomolecular centres.
Źródło:: Acta Physica Polonica A; 2003, 104, 3-4; 357-363
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: Terahertz Radiation Emission by Hot Electrons from AlGaN/GaN Heterostructure
Autorzy:: Shalygin, V.
Vorobjev, L.
Firsov, D.
Sofronov, A.
Melentyev, G.
Lundin, W.
Nikolaev, A.
Sakharov, A.
Tsatsulnikov, A.
Powiązania:: https://bibliotekanauki.pl/articles/1506221.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.50.Dn
73.50.Fq
78.60.Fi
Opis:: In the present paper we report on the observation and study of intense spontaneous THz emission from modulation-doped AlGaN/GaN heterostructure under conditions of heating of two-dimensional electron gas in lateral electric field. The experimental results are compared with the model of blackbody-like thermal emission of hot 2D electrons. Complementary transport measurements and theoretical simulation were carried out to determine the dependence of effective electron temperature on electric field. The role of non-equilibrium optical phonon accumulation is discussed.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 241-243
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 10.

Tytuł:: Spontaneous Terahertz Emission under Electrical Breakdown of a Shallow Acceptor in Ge
Autorzy:: Andrianov, A. V.
Zaharin, A. O.
Yassievich, I. N.
Zinovev, N. N.
Powiązania:: https://bibliotekanauki.pl/articles/2041653.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.67.De
78.60.Fi
07.57.Hm
Opis:: The spectra of spontaneous terahertz (THz) electroluminescence at the breakdown of shallow Ga acceptor in Ge were observed for the first time and investigated. We found and characterized the emission lines corresponding to the hole transitions between the excited states and the ground state of the impurity center as well as the transitions of the hot holes from the valence band to the impurity and within the valence band. A high quantum yield of the radiative transitions will become an important factor in designing electrically pumped THz emitters for the≈2 THz spectral range.
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 142-146
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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