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Wyświetlanie 1-15 z 351
Tytuł:
ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering
Autorzy:
Borysiewicz, M. A.
Pasternak, I.
Dynowska, E.
Jakieła, R.
Kolkovski, V.
Dużyńska, A.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/2048109.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Cd
61.05.cp
68.37.Hk
68.37.Ps
68.49.Sf
78.55.Et
Opis:
ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on using this technology in the sputtering regime.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 686-688
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO Nanorods on Nanofibrous ZnO Seed Layers by Hydrothermal Method and Their Annealing Effects
Autorzy:
Yim, K.
Jeon, S.
Kim, M.
Kim, S.
Nam, G.
Lee, D.
Kim, Jin
Kim, Jong
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1491348.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Lm
78.55.Et
Opis:
ZnO nanorods were grown by using the hydrothermal method on p-type Si (100) substrates with nanofibrous ZnO seed layers. Before the ZnO nanorods growth, nanofibrous ZnO seed layers were spin-coated onto the Si substrates. The structural and optical properties of ZnO nanorods were characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. The fibrous ZnO nanorods is possible due to the surface morphology of the nanofibrous ZnO seed layers. To investigate annealing effects of the ZnO nanorods, the post-annealing process was carried out at various temperatures ranging from 300 to 700C under argon conditions. The structural and optical properties of the ZnO nanorods were also affected by the post-annealing treatment.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 214-216
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO Nanopowders by a Microwave Hydrothermal Method - Influence of the Precursor Type on Grain Sizes
Autorzy:
Wolska, E.
Witkowski, B. S.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048108.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.-n
61.43.Gt
81.07.Wx
78.55.Et
Opis:
Two series of ZnO nanopowders obtained by a microwave hydrothermal method are examined. We used two different zinc precursors (zinc chloride (ZnCl$\text{}_{2}$) and zinc nitrate hexahydrate (N$\text{}_{2}$O$\text{}_{6}$Zn·6H$\text{}_{2}$O)). Both types of nanopowders show a bright emission in a visible light, including the band edge emission, which indicates their good crystallographic quality. Results of scanning electron microscopy, photo- and cathodoluminescence investigations are presented.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 683-685
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
(Zn,Cu)O Films by Atomic Layer Deposition - Structural, Optical and Electric Properties
Autorzy:
Łukasiewicz, M.
Witkowski, B.
Wachnicki, Ł.
Kopalko, K.
Gierałtowska, S.
Wittlin, A.
Jaworski, M.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1492571.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
ZnCuO thin films have been deposited on silicon, glass and quartz substrates by atomic layer deposition method, using reactive organic precursors of zinc and copper. As zinc and copper precursors we applied diethylzinc and copper(II) acetyloacetonate. Structural, electrical and optical properties of the obtained ZnCuO layers are discussed based on the results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, the Hall effect and photoluminescence investigations.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-034-A-036
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors
Autorzy:
Łukasiewicz, M.
Wójcik-Głodowska, A.
Guziewicz, E.
Jakieła, R.
Krajewski, T.
Łusakowska, E.
Paszkowicz, W.
Minikayev, R.
Kiecana, M.
Sawicki, M.
Godlewski, M.
Wachnicki, Ł.
Szczepanik, A.
Powiązania:
https://bibliotekanauki.pl/articles/1811957.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature ($T_s$=160°C) with a new zinc precursor (dimethylzinc - DMZn) and with cobalt (II) acetyloacetonate (Co(acac)₂) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1235-1240
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution
Autorzy:
Łukasiewicz, M.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Sawicki, M.
Paszkowicz, W.
Łusakowska, E.
Jakieła, R.
Krajewski, T.
Kowalik, I.
Kowalski, B.
Powiązania:
https://bibliotekanauki.pl/articles/1791350.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by atomic layer deposition method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt(II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300°C and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, Hall effect and SQUID investigations.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 921-923
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-ray Absorption Fine Structure Investigation of the Low Temperature Grown ZnCoO Films
Autorzy:
Wolska, A.
Klepka, M.
Witkowski, B.
Witkowski, M.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1431568.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Dm
75.50.Pp
68.55.-a
Opis:
ZnO based diluted magnetic semiconductors are intensively investigated for possible spintronic applications. In the present work we investigate the ZnCoO layers grown at low temperature by atomic layer deposition. The local atomic structure of a series of layers with different Co concentration is investigated by the X-ray absorption fine structure measurements. Two groups of ZnCoO layers are investigated - the ones with an uniform Co distribution and highly nonuniform films. For uniform samples we observe that a majority of Co atoms is built into the ZnO matrix substituting the Zn atoms. In contrast, for the nonuniform samples, metallic Co inclusions are also observed. These results are in strong correlation with the magnetic properties of the films studied separately. Samples with the uniform Co distribution (Co substitutes Zn in ZnO) are paramagnetic, whereas the nonuniform ones show a ferromagnetic response.
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 883-887
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Weak Ferromagnetism of Fe Intercalated Fullerides
Autorzy:
Byszewski, P.
Diduszko, R.
Baran, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929859.pdf
Data publikacji:
1994-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ls
76.70.Hb
78.55.Kz
Opis:
The magnetic properties of C$\text{}_{60}$Fe$\text{}_{x}$ resemble spin glass with the freezing onset above 200 K. The unusual magnetization behavior at intermediate temperatures is ascribed to bonds reorganization.
Źródło:
Acta Physica Polonica A; 1994, 85, 2; 297-302
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Vibration and Luminescence Spectroscopic Investigations of the Alkali Rare Earth Double Phosphates M$\text{}_{3}$(RE,Eu)(PO$\text{}_{4}$)$\text{}_{2}$ (M=K, Rb; RE=La, Gd)
Autorzy:
Kloss, M.
Schwarz, L.
Hölsä, J. P. K.
Powiązania:
https://bibliotekanauki.pl/articles/1995573.pdf
Data publikacji:
1999-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.50.-f
61.66.Fn
63.20.-e
71.20.Dg
71.20.Eh
71.70.-d
78.30.-j
78.55.-m
Opis:
The room temperature IR- and Raman spectra of the different M$\text{}_{3}$RE(PO$\text{}_{4}$)$\text{}_{2}$ (M = K, Rb; RE = La, Eu, Gd) double phosphates were analysed and used to interpret the vibronic side band structure in the photoluminescence spectra. The intraconfigurational 4f-4f electronic transitions in the photoluminescence spectra of the Eu$\text{}^{3+}$ doped M$\text{}_{3}$RE(PO$\text{}_{4}$)$\text{}_{2}$ were analysed in detail. The crystal field fine structure of the $\text{}^{5}$D$\text{}_{0}$ → $\text{}^{7}$F$\text{}_{J}$ (J=0-4) transitions was analysed accounting for the information on the crystal structure. The effect of the temperature as well as the alkali host cation was evaluated. Finally, a preliminary crystal field energy level scheme for the $\text{}^{7}$F$\text{}_{J}$ (J=0-4) ground term was deduced from the analysis of the photo-luminescence as well as IR- and Raman spectra.
Źródło:
Acta Physica Polonica A; 1999, 95, 3; 343-349
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Vacuum Ultraviolet Reflectivity of Cd$\text{}_{1-x}$Fe$\text{}_{x}$Te
Autorzy:
Dębowska, D.
Zimnal-Starnawska, M.
Kisiel, A.
Piacentini, M.
Zema, N.
Giriat, W.
Powiązania:
https://bibliotekanauki.pl/articles/1920915.pdf
Data publikacji:
1992-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.40.Kc
78.55.Et
Opis:
Reflectivity spectra for mixed crystals Cd$\text{}_{1-x}$Fe$\text{}_{x}$Te with 0.00 ≤ x ≤0.05 were investigated. The measurements were carried out in the energy range 6.0-30.0 eV at 300 K. The influence of Fe$\text{}^{2+}$(3d$\text{}^{6}$) states on the changes in the energy positions of the reflectivity maxima E'$\text{}_{1}$ , E'$\text{}_{1}$ + ∆, c, d, e, f, h and i is analysed. The obtained results confirm the band structure diagrams published previously.
Źródło:
Acta Physica Polonica A; 1992, 82, 2; 341-347
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Vacancy Formation in Fe-Al of B2 and $DO_3$ Alloys
Autorzy:
Kansy, J.
Hanc, A.
Giebel, D.
Jabłońska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1812532.pdf
Data publikacji:
2008-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
71.55.Ak
Opis:
The positron lifetime spectroscopy is employed to study vacancy formation in intermetallic phases of $DO_3$ and B2 structures from Fe-Al system as a function of Al concentration, ternary additive (Cr) and their thermal treatment. Lifetime spectra were fitted en block by a simple trapping model encoded directly to the software (computer program LT-9). In the investigated range of Al concentration (28, 38, 42, and 45 at%) only two types of defects are found. In $DO_3$ region a single type of defects (characterized by positron lifetime $τ_1$=170±2 ps) is detected and indicated as vacancies in the Fe sublattice $(V_{Fe})$. In B2 region a small amount of an additional type of defects (characterized by positron lifetime $τ_2$=214±13 ps) appears. Supposedly, these are vacancies in Al sublattice $(V_{Al})$. For Fe28Al and Fe28Al5Cr samples changes in $V_{Fe}$ concentration are determined as a function of the sample composition, annealing time at 1000°C and quenching the samples to air and oil. The defect concentration increases with increase in Al content. For FeAl with Al above 38 at%, the total concentration of defects is so high that positrons are exclusively trapped by defects. Therefore the concentrations $V_{Al}$ and $V_{Fe}$ cannot be determined separately. However, the ratio of $V_{Al}$ concentration to $V_{Fe}$ concentration is estimated as a function of Al content.
Źródło:
Acta Physica Polonica A; 2008, 113, 5; 1409-1415
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures
Autorzy:
Kalbarczyk, K.
Foltyn, M.
Grzybowski, M.
Stefanowicz, W.
Adhikari, R.
Li, Tian
Kruszka, R.
Kamińska, E.
Piotrowska, A.
Bonanni, A.
Dietl, T.
Sawicki, M.
Powiązania:
https://bibliotekanauki.pl/articles/1398574.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.Dc
73.40.Cg
73.43.Qt
78.55.Cr
Opis:
Results of two-probe magnetoresistance studies in GaN:Si/(Ga,Mn)N/GaN:Si prospective spin filter structures are reported. It is postulated that transport characteristics are strongly influenced by highly conductive threading dislocations and that shrinking of the device size partially mitigates the issue. Simultaneously, maxima at ≈1500 Oe on overall weak, up to 2%, negative magnetoresistance are seen at low temperature, whose origin has been tentatively assigned to effects taking place at the contacts areas.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1196-1198
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two-Electron Transition in Homoepitaxial GaN Layers
Autorzy:
Fiorek, A.
Baranowski, J. M.
Wysmołek, A.
Pakuła, K.
Wojdak, M.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1968067.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.55.Cr
Opis:
It is shown that the luminescence mapping is a powerful method to help identify optical transitions. Two-electron transition was identified in the homoepitaxial GaN layer by this technique. It was found that the donor and acceptor bound exciton emissions are spatially displaced and show intensity maxima at different places of the epitaxial layer. It was also found that the 3.45 eV line, suspected as "two-electron transition", follows exactly the donor bound exciton spatial distribution. Donor bound exciton recombines leaving the neutral donor in the excited 2s state. Thus, 1s-2s excitation being equal to 22 meV corresponds to 29 meV hydrogenic donor binding energy. This is the first identification of the two-electron transition in GaN.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 742-744
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transmission Spectra of Thue-Morse Multilayers Containing Negative Index Metamaterials
Autorzy:
Maksimovic, M.
Jaksic, Z.
Powiązania:
https://bibliotekanauki.pl/articles/2047879.pdf
Data publikacji:
2007-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.70.Qs
71.36.+c
71.55.Jv
78.20.Ci
Opis:
We study the optical transmission spectra in one-dimensional aperiodic Thue-Morse multilayers composed from alternating layers of media with positive and negative refractive index. We examine the influence of phase compensation on the spectral transmission for both on-axis and off-axis wave propagation. The origin of the transmission resonances and their relation with the field localization are analyzed. Nondispersive and lossless, as well as realistic dispersive and weakly lossy materials are considered.
Źródło:
Acta Physica Polonica A; 2007, 112, 5; 1049-1054
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transmission Electron Microscopy and Luminescence Studies of Quantum Well Structures Resulting from Stacking Fault Formation in 4H-SiC Layers
Autorzy:
Borysiuk, J.
Wysmołek, A.
Bożek, R.
Strupiński, W.
Baranowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811916.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Lp
78.55.-m
61.72.Nn
68.65.Fg
61.72.up
Opis:
Transmission electron microscopy and photoluminescence studies of quantum well structures related to stacking faults formation in 4H-SiC homoepitaxial layers are reported. The investigated 4H-SiC layers were deposited on 8° misoriented Si-terminated (0001) surface of high quality 4H-SiC substrate. It is found that the planar defects created by direct continuation from the SiC substrates are cubic 3C-SiC stacking faults. These defects are optically active, giving rise to characteristic luminescence band in the spectral range around 2.9 eV, which consist of several emission lines. The observed energy and intensity pattern of this emission is discussed of in terms of single, double and multiple quantum wells formed from neighboring 3C-SiC SF layers embedded in 4H-SiC material.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1067-1072
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 351

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