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Wyświetlanie 1-15 z 351
Tytuł:
$LaYO_{3}:Sm^{3+}$ Nanocrystalline Phosphor: Preparation and Emission Properties
Autorzy:
Đorđević, V.
Nikolić, M.
Antić, Ž.
Mitrić, M.
Dramićanin, M.
Powiązania:
https://bibliotekanauki.pl/articles/1503538.pdf
Data publikacji:
2011-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Eh
78.55.Hx
81.20.Ka
81.07.Bc
Opis:
Samarium doped $LaYO_{3}$ nanocrystalline phosphor powders are obtained by polymer complex solution method. Stoichiometric quantities of $La_{2}O_{3},$ $Y_{2}O_{3}$ and for dopant ions $Sm_{2}O_{3}$ were dissolved in hot nitric acid. Polyethylene glycol was added in solutions in 1:1 mass ratio to corresponding metal nitrates to form gel. The gel is combusted and annealed at 800°C for two hours to form nanopowder samples. Crystalline structure and phase purity is checked by X-ray diffraction and show that this material is synthesized in cubic bixbyite type structure for the first time. Luminescence properties of $Sm^{3+}$ doped $LaYO_{3}$ exhibited characteristic orange-red emission coming from the intra-4f-shell $\text{}^{4}G_{5/2} \rightarrow \text{}^{6}H_{J}$ electron transitions with emission decay of 1.5 ms. Energy level positions are derived from emission and excitation spectra.
Źródło:
Acta Physica Polonica A; 2011, 120, 2; 303-305
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
$SiO_x$ Nanowires Produced on Molybdenum-Coated Si Substrates
Autorzy:
Kim, H.
Lee, J.
Yang, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813396.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.-b
78.55.-m
Opis:
We synthesized $SiO_x$ nanowires with diameters of 30-140 nm, for the first time by the simple heating of the Mo-coated Si substrates. X-ray diffraction, selected area electron diffraction, and energy-dispersive X-ray spectroscopy indicated that the nanowires were in an amorphous state, comprising Si and O only. Fitting the photoluminescence spectrum with Gaussian functions revealed that the nanowires exhibited significant photoluminescence intensities near blue and green light regions. We extensively discussed the possible growth mechanism of $SiO_x$ nanowires.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1017-1020
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
(120)-Oriented CdTe/CdMnTe Quantum Well Structures Grown by Molecular Beam Epitaxy
Autorzy:
Kutrowski, M.
Karczewski, G.
Cywiński, G.
Surma, M.
Grasza, K.
Łusakowska, E.
Kossut, J.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1952037.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
78.55.Et
Opis:
We report on the MBE growth and magnetooptical studies of (120)-oriented CdTe/CdMnTe quantum well structures. The quality of structures, as evaluated by the photoluminescence line width, was as good as that of the best structures grown in ⟨100⟩ direction. No spin splitting enhancement, expected theoretically, due to the reduction of the antiferromagnetic interaction between Mn ions in CdTe/CdMnTe digital alloy quantum wells grown along ⟨120⟩ direction was observed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 879-882
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations
Autorzy:
Dróżdż, P.
Korona, K.
Sarzyński, M.
Czernecki, R.
Skierbiszewski, C.
Muzioł, G.
Suski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1185815.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.22.-f
78.47.jd
Opis:
The potential fluctuations in III-nitride quantum wells lead to many effects like emission broadening and S-shape energy vs. temperature dependence. The best description of the energy dependence comes from calculations based on Gaussian density of states. However, in most of the published reports, changes of carrier lifetime with energy and temperature are not taken into account. Since experimental evidence shows that lifetime significantly depends on energy and temperature, here we propose a model that describes two basic parameters of luminescence: lifetime of carries and emission energy as a function of temperature in the case of quantum wells and layers that are characterized by potential fluctuations. Comparison of the measured energy and lifetime dependences on temperature in specially grown InGaN/GaN quantum wells and InAlGaN layer shows very good agreement with the proposed theoretical approach.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1209-1212
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Absorption and Emission Properties of Light Emitting Diode Structures Containing GaInN/GaN QWs
Autorzy:
Binder, J.
Korona, K.
Borysiuk, J.
Wysmołek, A.
Baeumler, M.
Köhler, K.
Kirste, L.
Powiązania:
https://bibliotekanauki.pl/articles/1492933.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
72.40.+w
73.61.Ey
Opis:
In this work we present measurements of GaInN/GaN light emitting diodes (LEDs) with an active layer consisting of three quantum wells made of $Ga_{0.9}In_{0.10}N$ that have different widths (1.8 nm, 2.7 nm, 3.7 nm). A comparison of emission and absorption (photocurrent) on the same sample revealed a shift in energy, with the emission energy being significantly lower. The shifts are about 0.02 eV, 0.03 eV, and 0.04 eV for the quantum wells having the widths of 1.8 nm, 2.7 nm, and 3.7 nm, respectively. This can be explained by a shift of the ground state energy caused by the quantum confined Stark effect. Calculations show that due to the spontaneous polarization and the piezoelectric effect a strong electric field of the order of 1 MV/cm was present in the GaInN quantum wells. Simulations of ground-state energies in the model of an infinite square well under the influence of an electric field with a matched effective well width were performed and used to interpret the experimental results.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 918-920
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Absorption Studies of the Sulphur Donor in GaSb
Autorzy:
Kaczor, P.
Gerrits, A. M.
Dobaczewski, L.
Kaliński, Z.
Wittlin, A.
Powiązania:
https://bibliotekanauki.pl/articles/1873018.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
71.70.Ej
78.50.Ge
Opis:
The shallow-deep bistability of the sulphur-related DX centre in GaSb is demonstrated. After photoexcitation of the defect with the near-band gap light the metastable inter-donor transition in the far infrared can be observed. This observation allowed us to evaluate the polaron effective mass and polaron coupling constant for the material.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 399-402
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Acceptor-Like Level of the EL2 Defect in its Metastable Configuration
Autorzy:
Dreszer, P.
Baj, M.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1879457.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
Opis:
This paper presents for the first time the evident experimental confirmation that EL2 defect, while being in its metastable configuration, traps under hydrostatic pressure an additional electron, i.e. the acceptor-like (EL2*)$\text{}^{0}$ $\text{}^{/}$ $\text{}^{-}$ level enters the energy gap under pressure. We propose that in n-GaAs the EL2 thermal recovery takes always place via the (EL2*)$\text{}^{-}$ state.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 129-132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AlGaAs to GaAs Energy Transfer Mechanisms in AlGaAs/GaAs Structures
Autorzy:
Karpińska, K.
Godlewski, M.
Żytkiewicz, Z. R.
Chen, W. M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1921617.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
76.70.Hb
78.55.Cr
Opis:
The results of photoluminescence and optically detected cyclotron resonance experiments are presented for thick AlGaAs epilayers grown by liquid phase electroepitaxy method on GaAs:Cr substrate. These results indicate an efficient energy transfer from excited AlGaAs to GaAs.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 713-716
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency
Autorzy:
Shevchenko, E.
Toropov, A.
Nechaev, D.
Jmerik, V.
Shubina, T.
Ivanov, S.
Yagovkina, M.
Pozina, G.
Bergman, J.
Monemar, B.
Powiązania:
https://bibliotekanauki.pl/articles/1376069.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.De
78.55.Cr
71.35.-y
78.66.-w
Opis:
We report on optical studies of exciton localization and recombination kinetics in two single 2.2 nm thick $Al_{x}Ga_{1-x}N$/$Al_{x+0.1}Ga_{0.9-x}N$ quantum well structures (x=0.55 and 0.6) grown by plasma assisted molecular beam epitaxy on a c-sapphire substrate. Strong localization potential inherent for both the quantum well and barrier regions results in merging of the quantum well and barrier emission spectra into a single broad line centered at 285 nm (x=0.55) and 275 nm (x=0.6). Time-resolved photoluminescence measurements revealed surprising temperature stability of the photoluminescence decay time constant ( ≈ 400 ps) relevant to the recombination of the quantum well localized excitons. This observation implies nearly constant quantum efficiency of the quantum well emission in the whole range from 4.6 to 300 K.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1140-1142
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Amorphous Carbon Thin Films Deposited on Si and PET: Study of Interface States
Autorzy:
Mariazzi, S.
Macchi, C.
Karwasz, G. P.
Brusa, R. S.
Laidani, N.
Bartali, R.
Gottardi, G.
Anderle, M.
Powiązania:
https://bibliotekanauki.pl/articles/2043339.pdf
Data publikacji:
2005-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ac
71.60.+z
73.20.At
78.70.Bj
Opis:
Thin carbon films with various thicknesses, deposited on different substrates (Si and poly-ethylene-terephthalate) at the same operating conditions in a radio frequency plasma enhanced chemical vapour deposition system were characterized by Doppler broadening spectroscopy. The films and the substrates were depth profiled by a slow positron beam. The aim of these measurements was to study the open volume structure and the interface of the films. It was found that, independently from the substrate, the films were homogeneous and exhibited the same open volume distribution. On the contrary, the effective positron diffusion length in the Si substrate was found to change with the thickness of the carbon films. This behaviour was interpreted as a change in the electric field at the carbon/silicon interface.
Źródło:
Acta Physica Polonica A; 2005, 107, 5; 842-847
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Thermoluminescence Glow Peaks in β-Irradiated TlGaSeS Crystals
Autorzy:
Isik, M.
Yildirim, T.
Gasanly, N.
Powiązania:
https://bibliotekanauki.pl/articles/1398929.pdf
Data publikacji:
2016-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Kn
71.55.Ak
61.82.Fk
Opis:
Thermoluminescence properties of TlGaSeS layered single crystals were investigated in the temperature range of 280-720 K. Thermoluminescence glow curve exhibited three peaks with maximum temperatures of ≈370, 437, and 490 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers. All applied methods resulted with energies around 0.82, 0.91, and 0.99 eV. Dose dependence of the thermoluminescence intensity was also examined for the doses in the range of 0.7-457.6 Gy. Peak maximum intensity of the observed peak around 370 K showed an increase up to a certain dose and then a decrease at higher doses. This non-monotonic dose dependence was discussed under the light of a reported model in which different kinds of competition between radiative and nonradiative recombination centers during excitation or heating stages of the thermoluminescence process are explained.
Źródło:
Acta Physica Polonica A; 2016, 129, 6; 1165-1168
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Angular and Temperature Tuning of Emission from Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)
Autorzy:
Wójcik-Jedlińska, A.
Muszalski, J.
Bugajski, M.
Łukowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1812025.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
85.35.Be
78.67.De
42.55.Sa
42.55.Xi
Opis:
In this paper we demonstrate how the tuning of the VECSEL heterostructure can be precisely determined. Since the VECSEL active region is embodied in a microcavity, the photoluminescence signal collected from the chip surface is modified by the resonance of this cavity. The angle resolved photoluminescence measurements combined with the temperature tuning of the structure allowed us to precisely determine VECSEL emission features. The investigated structure consists of GaAs cavity with six InGaAs quantum wells and is designed for lasing at 980 nm.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1437-1443
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anisotropic Exchange Interaction between p-Shell Electron and s-Shell Hole in CdTe/ZnTe Quantum Dots
Autorzy:
Kazimierczuk, T.
Golnik, A.
Goryca, M.
Wojnar, P.
Gaj, J.
Kossacki, P.
Powiązania:
https://bibliotekanauki.pl/articles/1791334.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Et
Opis:
We study electron-hole exchange interaction in a single CdTe/ZnTe quantum dot by polarization-resolved photoluminescence measurements. We focus on recombination of excitonic states involving p-shell electrons: $X^{2-}$ and $XX^-$. Recombination lines of $X^{2-}$ and $XX^-$ states exhibit fine structure, which can be consistently explained within a model with four parameters $δ_{i}^{αβ}$ representing strength of iso- and anisotropic parts of interaction between s-hole and s- or p-electron.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 882-884
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Antisites Defects in GaP
Autorzy:
Jasiński, J.
Kamińska, M.
Palczewska, M.
Jurkiewicz-Wagner, P.
Powiązania:
https://bibliotekanauki.pl/articles/1929675.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
76.30.Mi
Opis:
ESR, optical, and transport measurements were done on neutron-irradiated GaP crystals subjected to thermal annealing. The behavior of two dominant paramagnetic defects: phosphorus antisite PP4 and WA1 [1] was followed. ESR signal similar to WA1 was earlier attributed to the defect related with gallium antisite [2]. Our thermal annealing experiments supported such attribution. Apart from that, the obtained results indicated that two dominant absorption bands in neutron-irradiated GaP with maxima at 0.79 and 1.13 eV [1] were not connected with PP$\text{}_{4}$ or WA1 defects. However, one of these paramagnetic defects (or two of them) were responsible for hopping transport in n-irradiated GaP crystals.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 579-582
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of Synchrotron Radiation to the Atomic and Electronic Structure of Semiconductors
Autorzy:
Altarelli, M.
Powiązania:
https://bibliotekanauki.pl/articles/1931851.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Bs
68.55.-a
78.70.Ck
Opis:
A brief review of the main experimental techniques exploiting synchrotron radiation in semiconductor physics is attempted. Topics emphasized include the study of surface and interface phenomena, such as surface structural properties (e.g. surface reconstruction) by X-ray diffraction, surface dynamical properties (e.g. adsorbate vibrational amplitudes) by the X-ray standing waves technique, etc. This review emphasizes brilliance (the phase-space density of photons) as the main figure of merit for many experimental techniques applicable to research in semiconductor physics. Examples of experiments made possible by the so-called "third generation", high-brilliance synchrotron sources are presented.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 17-24
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 351

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