- Tytuł:
- Recombination nearby N-n GaSb/GaInAsSb Staggered Lineup Heterojunction
- Autorzy:
-
Popov, A. A.
Imenkov, A. N.
Kolchanova, N. M.
Yakovlev, Yu. P.
Piotrowski, T. T. - Powiązania:
- https://bibliotekanauki.pl/articles/1877143.pdf
- Data publikacji:
- 1995-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 72.20.Nz
- Opis:
- The recombination nearby large band-offset staggered lineup N-GaSb/n-GaInAsSb heterojunction was investigated by means of the electroluminescence and carrier lifetime measurements. It was demonstrated that the nature of recombination, tuning rate as well as relation between radiative and non-radiative recombination strongly depend on the N-n band-offset and that its increase improves the carrier localization on the N-n interface.
- Źródło:
-
Acta Physica Polonica A; 1995, 87, 2; 559-562
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł