Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "61.85.+p" wg kryterium: Wszystkie pola

  Lista filtrów
Wyrównaj
Wyświetlanie 1-25 z 33
Tytuł:
Electronic Energy Loss of the Partially Stripped Boron-Like and Carbon-Like Fast Ions
Autorzy:
Gümüş, H.
Özalp, C.
Köroğlu, A.
Powiązania:
https://bibliotekanauki.pl/articles/2035735.pdf
Data publikacji:
2003-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
34.50.Bw
61.85.+p
Opis:
An analytical formula of the electronic stopping power expression in this study was derived for swift boron-like and carbon-like ions by using first-order perturbation theory and frozen-charge-state model. The Hartree- Fock-Slater determinant was used for the description of the bound electrons attached to ions in the ground state and orbital-screening parameter was determined by variational method. The calculated ground state energies in this study were compared with the results of Clementi-Roetti and they are in good agreement with 5%. It has been observed that the difference of energy loss for boron-like and carbon-like projectiles in a frozen-charge state increases as an atomic number increases. Furthermore, the analytical expression of the effective charge of boron-like and carbon-like projectiles was derived.zapisz i p
Źródło:
Acta Physica Polonica A; 2003, 103, 4; 349-363
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Change of α-Particle Stopping Power in Ni at the Curie Temperature
Autorzy:
Pawłowski, Bogdan
Moneta, Marek
Powiązania:
https://bibliotekanauki.pl/articles/2035743.pdf
Data publikacji:
2003-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
34.50.Bw
61.85.+p
Opis:
Experiments showing that the ion-solid state interaction characteristics change at T$\text{}_{C}$, the Curie temperature, were recapitulated. It was shown that the experimental results for the increase in theα-particles stopping power in Fe and Gd foils can be approximately described by the Bethe theory of stopping power with Stoner model for band ferromagnetism. The experimental result for increase in 5.486 MeVα-particles stopping power in 0.89 mg/cm$\text{}^{2}$ Ni foil after transition from ferro- to paramagnetic phase at T$\text{}_{C}$ was presented and it was shown to be in a good correlation with the previous data and with the theoretical evaluation.
Źródło:
Acta Physica Polonica A; 2003, 103, 5; 433-440
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Channelling of H$\text{}^{0}$ and H$\text{}^{+}$ in Si Single Crystal
Autorzy:
Moneta, M.
Gront, K.
Gwizdałła, T.
Czerbniak, J.
Powiązania:
https://bibliotekanauki.pl/articles/2035636.pdf
Data publikacji:
2002-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.85.+p
68.49.Sf
61.80.Lj
Opis:
The differences in the Rutherford backscattering angular spectra measured for 100 keV hydrogen atoms H$\text{}^{0}$ and protons H$\text{}^{+}$ backscattered from Si crystal are reported and analysed. It was shown that the H$\text{}^{0}$ atom beam is better channelled in the pure crystal and is much more sensitive to the crystal surface coverage, particularly Au layer than the H$\text{}^{+}$ ion beam. The deep crystal regions seem to strengthen this differences.
Źródło:
Acta Physica Polonica A; 2002, 102, 6; 759-766
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application
Autorzy:
Miyamura, Y.
Sekiguchi, T.
Chen, J.
Li, J.
Watanabe, K.
Kumagai, K.
Ogura, A.
Powiązania:
https://bibliotekanauki.pl/articles/1198415.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.-a
61.85.+p
61.72.Ff
Opis:
We demonstrate the imaging of the extended defects in Si materials using a focused ion beam instrument. Since Ga-ion beam has small penetration depth and high channeling character compared with electron beam, the secondary electron signal of focused ion beam is more sensitive to the surface morphology and crystallinity. We have tried to use this secondary electron imaging of focused ion beam for observation of various extended defects in Si materials for photovoltaic and semiconductor devices. As for the texture of multicrystalline Si, some grains are imaged darker than the others. It suggests that the crystal orientation gives different channeling effect on the primary Ga-ion beam, resulting in the different secondary electron yield. The grain boundaries and lineage in multicrystalline Si are shown as bright lines and patterns in the image. Although it may reflect the surface morphologies, these contrasts may be attributed to the channeling contrast due to lattice displacement or distortion. The contrast mechanism of FIB imaging is discussed.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 991-993
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Response of ZnO/GaN Heterostructure to Ion Irradiation
Autorzy:
Barcz, A.
Pągowska, K.
Kozubal, M.
Guziewicz, E.
Borysiewicz, M.
Dyczewski, J.
Jakieła, R.
Ratajczak, J.
Snigurenko, D.
Dynowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1402192.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Fk
61.85.+p
68.35.Dv
Opis:
In this paper we report on the analysis of Al⁺-implanted ZnO/GaN bilayers in search for the damage production mechanism and possible ion mixing. 100 nm or 200 nm thick ZnO epitaxial layers were grown on GaN substrates by either sputter deposition or atomic layer deposition technique followed by adequate annealing. Ion irradiations of ZnO/GaN were carried out at room temperature using 200 keV Al⁺ ions with fluences of 2×10¹⁵ and 10¹⁶ at./cm². Unprocessed and irradiated samples were characterized by the Rutherford backscattering spectrometry in channeling geometry (RBS\c), X-ray diffraction and transmission electron microscopy. Additionally, secondary ion mass spectrometry was employed for the aforementioned samples as well as for the implanted samples subjected to further annealing. It was found that the damage distributions in ZnO/GaN differ considerably from the corresponding defect profiles in the bulk ZnO and GaN crystals, most probably due to an additional strain originating from the lattice mismatch. Amount of intermixing appears to be relatively small; apparently, efficient recombination prevents foreign atoms to relocate to large distances.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 832-835
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
RBS/Channeling and TEM Study of Damage Buildup in Ion Bombarded GaN
Autorzy:
Pągowska, K.
Ratajczak, R.
Stonert, A.
Turos, A.
Nowicki, L.
Sathish, N.
Jóźwik, P.
Muecklich, A.
Powiązania:
https://bibliotekanauki.pl/articles/1504096.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Fk
61.85.+p
68.55.Ln
68.35.Dv
Opis:
A systematic study on structural defect buildup in 320 keV Ar-ion bombarded GaN epitaxial layers has been reported, by varying ion fluences ranged from 5 × $10^{12}$ to 1 × $10^{17}$ at./$cm^2$. 1 μm thick GaN epitaxial layers were grown on sapphire substrates using the metal-organic vapor phase epitaxy technique. Rutherford backscattering/channeling with 1.7 $MeV^4He$ beam was applied for analysis. As a complementary method high resolution transmission electron microscopy has been used. The later has revealed the presence of extended defects like dislocations, faulted loops and stacking faults. New version of the Monte Carlo simulation code McChasy has been developed that makes it possible to analyze such defects on the basis of the bent channel model. Damage accumulation curves for two distinct types of defects, i.e. randomly displaced atoms and extended defects (i.e. bent channel) have been determined. They were evaluated in the frame of the multistep damage accumulation model, allowing numerical parameterization of defect transformations occurring upon ion bombardment. Displaced atoms buildup is a three-step process for GaN, whereas extended defect buildup is always a two-step process.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 153-155
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stopping Power and Energy Straggling of Channeled He-Ions in GaN
Autorzy:
Turos, A.
Ratajczak, R.
Pągowska, K.
Nowicki, L.
Stonert, A.
Caban, P.
Powiązania:
https://bibliotekanauki.pl/articles/1504098.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Fk
61.85.+p
68.55.Ln
68.35.Dv
Opis:
GaN epitaxial layers are usually grown on sapphire substrates. To avoid disastrous effect of the large lattice mismatch a thin polycrystalline nucleation layer is grown at 500°C followed by the deposition of thick GaN template at much higher temperature. Remnants of the nucleation layer were visualized by transmission electron microscopy as defect agglomeration at the GaN/sapphire interface and provide a very useful depth marker for the measurement of channeled ions stopping power. Random and aligned spectra of He ions incident at energies ranging from 1.7 to 3.7 MeV have been measured and evaluated using the Monte Carlo simulation code McChasy. Impact parameter dependent stopping power has been calculated for channeling direction and its parameters have been adjusted according to experimental data. For virgin, i.e. as grown, samples, the ratio of channeled to random stopping power is constant and amounts to 0.7 in the energy range studied. Defects produced by ion implantation largely influence the stopping power. For channeled ions the variety of possible trajectories leads to different energy loss at a given depth, thus resulting in much larger energy straggling than that for the random path. Beam energy distributions at different depths have been calculated using the McChasy code. They are significantly broader than those predicted by the Bohr formula for random direction.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 163-166
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Crystal Lattice Deformation by Ion Channeling
Autorzy:
Jóźwik, P.
Sathish, N.
Nowicki, L.
Jagielski, J.
Turos, A.
Kovarik, L.
Arey, B.
Shutthanandan, S.
Jiang, W.
Dyczewski, J.
Barcz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400434.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.85.+p
68.55.Ln
02.70.Uu
68.37.Og
Opis:
A model of dislocations has been developed for the use in Monte Carlo simulations of ion channeling spectra obtained for defected crystals. High resolution transmission electron microscopy micrographs show that the dominant type of defects in the majority of ion irradiated crystals are dislocations. The RBS/channeling spectrum is then composed of two components: one is due to direct scattering on randomly displaced atoms and the second one is related to beam defocussing on dislocations, which produce predominantly crystal lattice distortions, i.e. bent channels. In order to provide a correct analysis of backscattering spectra for the crystals containing dislocations we have modified the existing Monte Carlo simulation code "McChasy". A new version of the code has been developed by implementing dislocations on the basis of the Peierls-Nabarro model. Parameters of the model have been determined from the high resolution transmission electron microscopy data. The newly developed method has been used to study the Ar-ion bombarded $SrTiO_3$ samples. The best fit to the Rutherford backscattering/channeling spectra has been obtained by optimizing the linear combination of two kinds of defects: displaced atoms and bent channels. The great virtue of the Monte Carlo simulation is that unlike a traditional dechanneling analysis it allows quantitative analysis of crystals containing a mixture of different types of defects.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 828-830
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Damage Accumulation in Nuclear Ceramics
Autorzy:
Thomé, L.
Moll, S.
Jagielski, J.
Debelle, A.
Garrido, F.
Sattonnay, G.
Powiązania:
https://bibliotekanauki.pl/articles/1503742.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.80.Jh
61.82.Ms
61.43.-j
61.85.+p
68.37.Lp
Opis:
Ceramics are key engineering materials in many industrial domains. The evaluation of radiation damage in ceramics placed in a radiative environment is a challenging problem for electronic, space and nuclear industries. Ion beams delivered by various types of accelerators are very efficient tools to simulate the interactions involved during the slowing-down of energetic particles. This article presents a review of the radiation effects occurring in nuclear ceramics, with an emphasis on new results concerning the damage build-up. Ions with energies in the keV-GeV range are considered for this study in order to explore both regimes of nuclear collisions (at low energy) and electronic excitations (at high energy). The recovery, by electronic excitation, of the damage created by ballistic collisions (swift heavy ion beam induced epitaxial recrystallization process) is also reported.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 7-12
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition
Autorzy:
Ratajczak, R.
Stonert, A.
Guziewicz, E.
Gierałtowska, S.
Krajewski, T.
Luka, G.
Wachnicki, L.
Witkowski, B.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1400467.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.hf
81.05.Dz
81.15.Hi
68.55.ag
82.80.Yc
61.85.+p
Opis:
The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 899-903
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Laboratory Dispersive EXAFS Spectrometer
Autorzy:
Mosset, A.
Lecante, P.
Baules, P.
Jaud, J.
Galy, J.
Burian, A.
Powiązania:
https://bibliotekanauki.pl/articles/1963392.pdf
Data publikacji:
1997-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.85.Nc
61.10.Ht
61.43.-j
Opis:
We report on a laboratory EXAFS spectrometer optimized for transmission dispersive mode. Absorption edges ranging from 6 to 20keV can be studied. Factors determining energy range and resolution are detailed. A new asymmetric geometry which allows to use all the lattice planes of the dispersing crystal is described and the choice of the best plane analysed. EXAFS spectra of Cu metal and Cu acetate, obtained on this laboratory facility, are compared to the corresponding spectra recorded on the French synchrotron facility (LURE).
Źródło:
Acta Physica Polonica A; 1997, 91, 4; 825-828
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Origin of the Surface Sensitivity in Surface X-Ray Diffraction
Autorzy:
Robinson, I.
Eng, P.
Schuster, R.
Powiązania:
https://bibliotekanauki.pl/articles/1931649.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.85.+n
61.10.Lx
Opis:
The first half of this paper explains how X-ray diffraction can be sensitive to surface structure and morphology, even though X-rays interact only weakly with matter and hence penetrate deeply into the bulk medium. The basis of the crystal truncation rod construction is given, which demonstrates this sensitivity in a formal way. This is then illustrated with details of two problems of current interest which have been studied with synchrotron radiation at the National Synchrotron Light Source in New York. The structure of the Si(111)7×7 reconstructed surface, as determined in the vertical direction by X-ray reflectivity, is presented as a straightforward application of crystal truncation rods. Then we discuss alkali adsorption on Ag(110) surfaces which induces a "missing row" reconstruction. We measured the trends in the induced structural parameters as a function of Cs coverage on Ag(110), but found the greatest changes were associated with the location of the Cs instead. At high coverage this is ordered only in a one-dimensional sense, but as the coverage is reduced it becomes partially registered in the second direction, and, surprisingly, occupies a site higher above the surface.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 513-520
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Standing Waves: a Powerful Tool for Interface Studies
Autorzy:
Lagomarsino, S.
Scarinci, F.
Castrucci, P.
Giannini, C.
Powiązania:
https://bibliotekanauki.pl/articles/1931655.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.85.+n
61.10.Lx
68.35.-p
Opis:
The X-ray standing wave technique has demonstrated in these last years to be a powerful method in the study of interfaces. In this paper the fundamentals of the technique will be given, together with examples of applications in the field of metal-semiconductor, of buried semiconductor-semiconductor interfaces and in structural studies of Langmuir-Blodgett films.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 553-566
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Layer and Interface Structure of CoFe/Ru Multilayers
Autorzy:
Pym, A.
Lamperti, A.
Cardoso, S.
Freitas, P.
Tanner, B.
Powiązania:
https://bibliotekanauki.pl/articles/1814028.pdf
Data publikacji:
2007-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.Kw
68.65.Ac
68.35.Ct
75.50.Kj
85.75.Dd
85.70.Ay
Opis:
Grazing incidence X-ray scattering measurements have been performed to probe the structure of CoFe/Ru layers and their interfaces. It was found that the interface width increased approximately linearly with the layer number from the substrate in a multilayer and that a substantial asymmetry existed between the width of CoFe/Ru and Ru/CoFe interfaces. By co-minimizing both the specular and diffuse scatter with that simulated from a model structure, the topological roughness amplitude was determined to be comparable to the intermixing interface width.
Źródło:
Acta Physica Polonica A; 2007, 112, 6; 1243-1248
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Calculations of Dark Current in Interband Cascade Type-II Infrared InAs/GaSb Superlattice Detector
Autorzy:
Hackiewicz, K.
Martyniuk, P.
Rutkowski, J.
Kowalewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1032582.pdf
Data publikacji:
2017-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Mn
73.61.Ey
78.30.Fs
85.60.Bt
85.60.Gz
Opis:
In this paper we investigate interband cascade type-II mid-wavelength infrared InAs/GaSb superlattice detector in temperature range from 200 K to 300 K. The paper is based on the theoretical calculation of dark current treated as a sum of two components: average bulk current and average leakage current, flowing through the device. The average leakage current results from a comparison of theoretically calculated bulk current and measured one. We show that it is possible to fit theoretical model to experimental data, assuming that transport in absorber is determined by the dynamics of the intrinsic carriers. Based on the fit we estimated carrier lifetime greater than 100 ns in temperature range 200-300 K.
Źródło:
Acta Physica Polonica A; 2017, 132, 4; 1415-1419
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Diffraction, Mössbauer Spectroscopy, and Magnetoelectric Effect Studies of Multiferroic Bi₅Ti₃FeO₁₅ Ceramics
Autorzy:
Pikula, T.
Guzdek, P.
Dzik, J.
Lisinska-Czekaj, A.
Jartych, E.
Powiązania:
https://bibliotekanauki.pl/articles/1385375.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.85.+t
85.80.Jm
61.05.cp
76.80.+y
Opis:
Bi₅Ti₃FeO₁₅ ceramics belongs to multiferroic class of materials. In this work it was prepared by solid-state sintering method and investigated by X-ray diffraction, Mössbauer spectroscopy, and magnetoelectric effect measurements. As it was proved by X-ray diffraction studies the single-phase Bi₅Ti₃FeO₁₅ compound was obtained. The Mössbauer investigations revealed paramagnetic character of the compound at room temperature as well as at 80 K. Magnetoelectric measurements were carried out at room temperature using lock-in dynamic method and they proved presence of magnetoelectric coupling in this material. Additional magnetoelectric studies were carried out after subsequent electric poling of the sample. It was found that the maximum value of the coupling coefficient was almost twice bigger than in the case without the initial poling and reached a value of $α_{ME}$ ≈ 20.7 mV cm⁻¹ Oe⁻¹.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 296-299
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Properties of p-ZnTe/n-CdTe Photodiodes
Autorzy:
Chusnutdinow, S.
Makhniy, V.
Wojtowicz, T.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1409588.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
73.61.Ga
85.60.Dw
88.40.jm
Opis:
Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of photovoltaic, thinfilm p-ZnTe/n-CdTe heterojunctions have been studied in the temperature range of 280-400 K. The p-n junctions were grown by MBE on (100) semi-insulating GaAs substrates. From the analysis of I-V and C-V curves the potential barrier height of the junctions and its temperature dependence are determined. The relatively large value of the temperature coefficient of the potential barrier height (2.5-3.0 × $10^{-3}$ eV/K) indicates a high density of defects at the p-ZnTe/n-CdTe interface. The presence of interface defects limits the efficiency of the solar energy conversion of these devices.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1077-1079
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Glass Transition and Crystallization Behavior in $Ga_{15}Se_{85 - x}Pb_x$ (0 ≤ x ≤ 6) Chalcogenide Glasses
Autorzy:
Khan, Z.
Khan, S.
Alvi, M.
Powiązania:
https://bibliotekanauki.pl/articles/1400308.pdf
Data publikacji:
2013-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.Dq
61.05.cp
64.70.p
64.70.dg
65.60.+a
Opis:
There has been a growing interest in the synthesis and characterization of amorphous chalcogenide glasses due to their importance in preparing electronic memories, grating, switching devices and their optical applications as good IR transmitting materials. The study of the glass transformations and crystallization processes in the amorphous systems is interesting not only from the fundamental aspect of establishing the reaction mechanism of crystal nucleation and growth, but also from a technological point of view. The present research work is concentrated on the study of glass transition and crystallization behavior in $Ga_{15}Se_{85 - x}Pb_x$ with x=0, 3, and 6 chalcogenide glasses by differential scanning calorimetry. Their amorphous nature has been verified by X-ray diffraction. The differential scanning calorimetry experiments were performed at different continuous heating rates (5 to 25 K/min). The glass transition temperature (T_{g}) and crystallization temperature $(T_{c})$ of these glasses has been determined from differential scanning calorimetry thermograms. The dependence of $T_{g}$ and $T_{c}$ on the heating rate (β) has been used for the determination of different crystallization parameters such as the activation energy of crystallization (Δ $E_{c}$), the activation energy for structural relaxation (Δ $E_{t}$) and the order parameter (n). The results of crystallization were discussed on the basis of different models such as Kissinger's approach and modification for non-isothermal crystallization in addition to Johnson, Mehl, Ozawa and Avrami.
Źródło:
Acta Physica Polonica A; 2013, 123, 1; 80-86
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers Technology
Autorzy:
Szerling, A.
Karbownik, P.
Kosiel, K.
Kubacka-Traczyk, J.
Pruszyńska-Karbownik, E.
Płuska, M.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807678.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
85.60.-q
85.35.Be
72.80.Ey
73.61.Ey
78.66.Fd
Opis:
The fabrication technology of AlGaAs/GaAs based quantum cascade lasers is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W for the GaAs/$Al_{0.45}Ga_{0.55}As$ laser without anti-reflection/high-reflection coatings.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-45-S-47
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic and Structural Study of $Mn_{1.15}Fe_{0.85}P_{1-x}Ge_{x}$ (0.25 < x < 0.32) Magnetocaloric Compounds Prepared by Arc Melting
Autorzy:
Hawelek, L.
Wlodarczyk, P.
Zackiewicz, P.
Polak, M.
Kaminska, M.
Puźniak, R.
Radelytskyi, I.
Kolano-Burian, A.
Powiązania:
https://bibliotekanauki.pl/articles/1402326.pdf
Data publikacji:
2015-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Sg
75.30.Kz
61.05.C-
61.66.Fn
Opis:
Recently, room temperature magnetocaloric materials increasingly attracted attention in the development of magnetic refrigerators. In this paper, an effect of P/Ge substitution on the magnetic phase transition in the series of $Mn_{1.15}Fe_{0.85}P_{1-x}Ge_{x}$ (0.25 < x < 0.32) magnetocaloric compounds prepared by the arc melting technique and subsequent homogenization process has been studied. Calorimetric and magnetization results show that the temperature of structural phase transition coincide with the Curie temperature and fall within the temperature range 270-355 K. The magnetic entropy change reaches the maximum value for the compound with x=0.28 and equals to 32 J/(kg K) for the magnetic field change of 5 T. The adiabatic temperature change for the same sample, measured using magnetocalorimeter, is equal to 1.2 K for the magnetic field change of 1.7 T. It was found that the increase of Ge content in the sample causes weakening of first order magnetic transition, which is manifested by the lowering difference in transition temperature measured in two zero-field-cooling and field-cooled-cooling regimes.
Źródło:
Acta Physica Polonica A; 2015, 128, 1; 76-80
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications
Autorzy:
Baeumler, M.
Polyakov, V.
Gütle, F.
Dammann, M.
Benkhelifa, F.
Waltereit, P.
Reiner, R.
Müller, S.
Wespel, M.
Quay, R.
Mikulla, M.
Wagner, J.
Ambacher, O.
Powiązania:
https://bibliotekanauki.pl/articles/1197910.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Fi
85.30.De
85.30.Tv
85.40.Bh
85.40.Qx
73.40.-c
73.90.+f
73.61.Ey
73.50.Mx
Opis:
The lifetime and stability of AlGaN/GaN heterostructure field effect transistors at high power levels can be enhanced by introducing field plates to reduce electric field peaks in the gate-drain region. Simulations of the electric field distribution along the channel using the 2D ATLAS software from Silvaco indicate that above a characteristic drain source voltage three spatially separated electric field peaks appear, one located at the drain-side edge of the gate foot, one at the end of the drain-sided gate field plate, and one at the end of the source shield field plate. The close correlation between lateral electric field and the electroluminescence due to hot electron related intra-band transitions can be very helpful when optimizing the electric field distribution in high power devices. Electroluminescence microscopy images of devices with gate and source shield field plate reveal the peaks located at the locations of enhanced electric field. By studying the voltage dependence of the electroluminescence peaks the influence of the field plates on the electric field distribution in source drain direction can be visualized.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 982-985
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy-Dispersive X-Ray Reflectometry and X-Ray Grazing Incidence Diffraction from Organic Multilayers
Autorzy:
Neißendorfer, F.
Bolm, A.
Pietsch, U.
Powiązania:
https://bibliotekanauki.pl/articles/1963393.pdf
Data publikacji:
1997-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.18.+p
61.10.Kw
68.55.Jk
07.85.Qe
Opis:
The installation of the wavelength shifter at the BESSY I storage ring in Berlin makes it possible to apply the synchrotron radiation for white beam investigations of organic multilayers. Considering the energy characteristic of the synchroton radiation source and the absorbance of the beryllium window the synchrotron radiation can be used outside the UHV system for X-ray reflectometry and X-ray diffuse scattering between about 3 keV and 25 keV. Between 3 and 10 keV the synchrotron radiation intensity is high enough to realize the grazing incidence diffraction mode in order to get in-plane information. The capability of the methods is demonstrated at the example of a Pb-stearate multilayer covered by a thin polyelectrolytic polymer layer.
Źródło:
Acta Physica Polonica A; 1997, 91, 4; 829-833
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Differentiation of Native and Reconstructed Ferritin using the MRI Gradient Echo Pulse Sequence
Autorzy:
Balejcikova, L.
Strbak, O.
Baciak, L.
Kovac, J.
Masarova, M.
Krafcik, A.
Kopcansky, P.
Dobrota, D.
Frollo, I.
Powiązania:
https://bibliotekanauki.pl/articles/1032829.pdf
Data publikacji:
2017-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.60.Ej
83.85.Fg
87.61.-c
87.64.Cc
87.85.jf
Opis:
Ferritin is a biological iron storage biomacromolecule, consisting of a spherical protein shell (apoferritin) and mineral iron core. It plays a crucial role in the pathological processes of disrupted iron homeostasis followed by iron accumulation, linked with various disorders (e.g. neuroinflammation, neurodegeneration, cirrhosis, cancer, etc.) In vitro reconstructed ferritin, with the assistance of a non-invasive magnetic resonance imaging technique, has the potential to become a suitable biomarker of these pathological processes. Through gradient echo pulse sequencing, we were able to clearly distinguish between native (physiological) and reconstructed/iron-overloaded (pathological) ferritin, which can serve as a starting point for the development of a method for their differentiation. Such method is necessary for the early diagnosis of iron-based diseases.
Źródło:
Acta Physica Polonica A; 2017, 131, 4; 1093-1095
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mott-Schottky Analysis of the $P3HT:ZnS_\text{cubic}$ and $P3HT:ZnS_\text{hexa}$ Bulk Heterojunction Solar Cells
Autorzy:
Abdul Kareem, T.
Powiązania:
https://bibliotekanauki.pl/articles/1398356.pdf
Data publikacji:
2016-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
87.85.Rs
73.40.Lq
73.40.Sx
73.50.Pz
73.61.Ga
73.61.Ph
73.63.Bd
81.05.Dz
88.40.jp
88.40.jr
Opis:
Bulk heterojunction solar cells of sphalerite and wurtzite ZnS incorporated P3HT were fabricated and their Mott-Schottky analysis was performed to find the conduction mechanism of the devices. The analysis shows the formation of a Schottky junction and band unpinning at the P3HT:ZnS-Al contact and it confirms the hole conductivity in the active material.
Źródło:
Acta Physica Polonica A; 2016, 129, 3; 409-413
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications
Autorzy:
Wachnicki, L.
Gieraltowska, S.
Witkowski, B.
Figge, S.
Hommel, D.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1399138.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Kk
61.05.cp
81.05.Dz
Opis:
An important feature of zinc oxide and gallium nitride materials are their similar physical properties. This allows to use them as a p-n junction materials for applications in optoelectronics. In earlier work we presented use of ZnO as a transparent contact to GaN, which may improve external efficiency of LED devices. In this work we discuss properties of a n-ZnO/p-GaN heterostructure and discuss its optimization. The heterostructure is investigated by us for possible applications, e.g. in a new generation of UV LEDs or UV light detectors.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 869-872
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-25 z 33

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies