Wszystkie pola: 61.72.Yx - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry
Autorzy:: Misiuk, A.
Härtwig, J.
Prieur, E.
Ohler, M.
Bąk-Misiuk, J.
Domagała, J.
Surma, B.
Powiązania:: https://bibliotekanauki.pl/articles/1964154.pdf
Data publikacji:: 1997-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Yx
81.40.Vw
61.10.-i
Opis:: The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
Źródło:: Acta Physica Polonica A; 1997, 91, 5; 987-991
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure
Autorzy:: Misiuk, A.
Bąk-Misiuk, J.
Bryja, L.
Kątcki, J.
Ratajczak, J.
Jun, J.
Surma, B.
Powiązania:: https://bibliotekanauki.pl/articles/2030659.pdf
Data publikacji:: 2002-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.10.-i
61.72.Yx
81.40.Vw
Opis:: Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O$\text{}^{+}$ dose, D, within the 6×10$\text{}^{17}$-2×10$\text{}^{18}$ cm$\text{}^{-2}$ range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10$\text{}^{17}$ cm$\text{}^{-2}$). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
Źródło:: Acta Physica Polonica A; 2002, 101, 5; 719-727
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Vacancy-Fluorine Clusters in Silicon
Autorzy:: Chroneos, A.
Vovk, R.
Goulatis, I.
Nazyrov, Z.
Pinto Simoes, V.
Januszczyk, M.
Latosińska, J.
Powiązania:: https://bibliotekanauki.pl/articles/1504564.pdf
Data publikacji:: 2011-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 31.15.es
61.72.jd
61.72.uf
61.72.Yx
Opis:: Fluorine (F) doping and the formation of F-vacancy $(F_{n}V_{m})$ clusters have been extensively studied in silicon (Si) as they can suppress the transient self-interstitial mediated diffusion of boron (B). Recent experimental studies by Bernardi et al. revealed that there is no significant concentration of $F_{n}V_{m}$ clusters (for n ≥ 4, m ≥ 1) in disagreement with a number of density functional theory studies. In the present study we use electronic structure calculations to evaluate the binding energies of $F_{n}V_{m}$ clusters and $V_{n}$ clusters. The significant binding energies of the $V_{n}$ clusters reveals that the concentration of the large $F_{n}V_{m}$ clusters (n ≥4, m ≥1) will be limited compared to the $V_{n}$ clusters or even smaller clusters.
Źródło:: Acta Physica Polonica A; 2011, 119, 6; 774-777
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Correlation between Copper Precipitation and Grown-In Oxygen Precipitates in 300 mm Czochralski Silicon Wafer
Autorzy:: Dong, P.
Ma, X.
Yang, D.
Powiązania:: https://bibliotekanauki.pl/articles/1361181.pdf
Data publikacji:: 2014-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Ff
61.72.Ji
61.72.Qq
61.72.Yx
61.72.Cc
Opis:: The behaviors of copper (Cu) precipitation along the radial direction of the 300 mm Czochralski grown silicon wafer have been investigated. It is found that the density of Cu precipitates decreases from the center to edge of the silicon wafer. Moreover, it is revealed that the density of grown-in oxygen precipitates also decreases along the radial direction as mentioned above. Therefore, it is apparent that the Cu precipitate density is positively correlative to the grown-in oxygen precipitate density. This is due to that the grown-in oxygen precipitates can serve as the heterogeneous nucleation centers for Cu precipitation. It is suggested that the Cu decoration in combination with preferential etching can be used to indirectly evaluate the radial distribution of grown-in oxygen precipitates in the silicon wafers.
Źródło:: Acta Physica Polonica A; 2014, 125, 4; 972-975
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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