- Tytuł:
- MOCVD Growth of InP-Related Materials Using TEA and TBP
- Autorzy:
-
Czub, M.
Strupiński, W. - Powiązania:
- https://bibliotekanauki.pl/articles/1933730.pdf
- Data publikacji:
- 1995-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 68.55.Ce
- Opis:
- High quality epitaxial layers of GaAs, InP, AlAs, InGaAs, InGaP, InGaAlP have been grown by low-pressure metalorganic chemical vapor deposition using TMIn, TMGa, TMAl and the less hazardous group V precursors, ΤΒA, TBP. Excellent morphology was obtained for GaAs and InP in the temperature ranges of 570-650°C and 520-650°C, respectively. The V/III ratio as low as 1.5 was used to grow epilayers of InP. The 77 K mobility of InGaAs lattice matched to InP (grown with ΤΒA) was 72360 cm $\text{}^{2}$/(V s) for n = 1.5 × 10$\text{}^{15}$ /cm$\text{}^{-3}$ and a thickness of 2 μm. Comparable photoluminescence parameters of InGaP between layers grown with TBP and PH$\text{}_{3}$ were achieved, but for InGaAlP (TBP) photoluminescence intensity was significantly lower than for InGaAlP (PH$\text{}_{3}$). The promising results allow one to apply of ΤΒA and TBP for developing of device structures.
- Źródło:
-
Acta Physica Polonica A; 1995, 88, 4; 695-698
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki