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Wyświetlanie 1-10 z 10
Tytuł:
The concept of modification and analysis of the strength of steel roadway supports for coal mines in the Soma Basin in Turkey
Autorzy:
Grodzicki, M.
Rotkegel, M.
Powiązania:
https://bibliotekanauki.pl/articles/178709.pdf
Data publikacji:
2018
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
projects
roadway support
strength analysis
Opis:
The article presents a comparison of the roadway supports currently used in mines in the Soma basin in Turkey with new one proposed by Huta Łabędy and Central Mining Institute (GIG) in terms of resistance parameters and work in conditions of specific loads. The strength analysis of the frame was carried out using the finite element method, using the COSMOS/M program, based on the methodology developed and applied in GIG. The frame models were built corresponding to their geometry and cross-sectional parameters of the sections used. Beam elements (BEAM3D) were used for building models, which were given cross-sectional parameters of the V36 section. This resulted in three frame models that were loaded in three ways (three load variants). The first option included roof load, acting on the roof bar in a uniform manner, at a length of about 3.0 m. In the second variant, the same load was adopted but the resistance of the side wall was omitted. However, in the third variant, the same roof load was assumed in addition to a side load, acting on the sliding arch, at a length of about 3.0 m, a value corresponding to half the load of the roof. As a result of the calculations carried out, the distribution of reduced stresses in the analysed frames and the maximum load values were obtained. The proposed roadway supports retain the functionality of the previously used frames in terms of width, height, cross-sectional area of the suport and the number of elements. They are characterised by the same weight and at the same time, they have up to 24% more load capacity because of the replacement of straight sections of curved side sections. This treatment was possible by forming individual elements of the arch with two bending radii. The additional load increase was obtained by using S550W steel.
Źródło:
Studia Geotechnica et Mechanica; 2018, 40, 1; 38-45
0137-6365
2083-831X
Pojawia się w:
Studia Geotechnica et Mechanica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modification of Electronic Structure of n-GaN(0001) Surface by N⁺-Ion Bombardment
Autorzy:
Grodzicki, M.
Mazur, P.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1033786.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.47.Fg
73.30.+y
82.80.Pv
Opis:
The electronic structure of n-type GaN(0001) surface and its modification by N⁺ ion bombardment are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Low-energy N⁺ ion bombardment, which was done using an ion gun at an energy of 200 eV, leads to nitriding of the surface. The process changes the surface stoichiometry and, consequently, provides formation of a disordered altered GaN layer. The calculated electron affinity of the clean n-GaN surface of 3.4 eV and band bending of 0.2 eV became changed after bombardment to 2.9 eV and 0.8 eV, respectively. The obtained difference in valence band maximum between the clean sample and the bombarded one was 0.6 eV.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 351-353
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Cr ohmic contact on graphitized 6H-SiC(0001) surface
Autorzy:
Grodzicki, M
Mazur, P
Wasielewski, R
Ciszewski, A
Powiązania:
https://bibliotekanauki.pl/articles/173424.pdf
Data publikacji:
2013
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
silicon carbide
chromium
electric contacts
graphitization
Opis:
Ohmic electrical contacts were formed at room temperature on n-type, Si-oriented 6H-SiC substrates, with Cr layers vapor-deposited under ultra-high vacuum conditions on the samples being graphitized prior to the deposition. The contacts reveal a very good linearity of the local I–V characteristics. This method of ohmic contact formation does not require the use of samples with high doping concentration and the application of high-temperature annealing during the processing of contacts. Results of characterization of the contacts and of the in situ graphitization process of the SiC substrates, obtained by X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and atomic force microscopy (AFM) with conducting tip, are given in this paper.
Źródło:
Optica Applicata; 2013, 43, 1; 91-98
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)
Autorzy:
Mazur, P.
Zuber, S.
Grodzicki, M.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1195467.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
68.37.Ps
68.37.Ef
68.37.-d
81.10.Bk
81.07.-b
Opis:
Atomic force microscopy and scanning tunneling microscopy have been used for nanometer scale modifications of Sb films deposited on 6H-SiC(0001) surface. The films are grown in situ by vapor deposition under ultrahigh vacuum. The growth follows the Volmer-Weber mode. Ultrathin (up to 3 nm on average) Sb films which consist of no coalesced islands can be modified by moving the island over the substrate surface by the AFM tip. Thicker films, which are firmer due to the coalescence, can be modified by the field and/or current produced by STM tip. Final result of the modifications is adsorbate free 6H-SiC(0001) surface restitution over the modified area.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1131-1133
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching
Autorzy:
Grodzicki, M.
Wasielewski, R.
Surma, S.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1807513.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.65.Cf
81.15.Gh
72.80.Jc
79.60.Dp
68.37.Ps
Opis:
The surface of 6H-SiC(0001) samples was subjected to etching under $H_{2}$/Ar gas mixture in a cold-wall tubular furnace. Its topography and properties were characterized by atomic force microscopy and X-ray photoelectron spectroscopy before and after hydrogen etching. The conditions have been found, under which surface polishing-related damages could be removed. Si droplets were observed under certain etching conditions. The effect of the samples' cooling rate on the obtained surface morphology and chemistry was investigated to unveil the mechanism of Si recrystallization onto the crystal surface upon etching.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-82-S-85
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
TiO2 thin films grown on SiO2–Si(111) by the reactive evaporation method
Autorzy:
Grodzicki, M
Wasielewski, R
Mazur, P
Zuber, S
Ciszewski, A
Powiązania:
https://bibliotekanauki.pl/articles/173459.pdf
Data publikacji:
2013
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
titanium oxide
wettability
X-ray photoelectron spectroscopy
UV radiation
Opis:
TiO2 thin films were grown on silicon substrates using an electron-beam evaporator. Grainy TiO was used as the evaporation material. Temperature substrate during TiO2 growth was relatively low (about 150 °C), what is important for many optoelectronic devices and multilayers mirrors. High vacuum condition allows to maintain clean surfaces substrates before and during oxide growth. The morphology of titanium oxide thin films was ex situ investigated using atomic force microscopy operating in contact mode, X-ray photoelectron spectroscopy, X-ray powder diffractometry, and by means of a contact angle analyzer. The influence of annealing treatment and exposure to UV–VIS radiation on the morphology has been also discussed.
Źródło:
Optica Applicata; 2013, 43, 1; 99-107
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Sb Layers on p-GaN: UPS, XPS and LEED Study
Autorzy:
Grodzicki, M.
Mazur, P.
Pers, J.
Zuber, S.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1376064.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
68.37.Ps
68.37.Ef
68.37.-d
81.10.Bk
81.07.-b
Opis:
The electronic structure of p-type GaN(0001) surfaces and its modification by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report. The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature. Electron affinity of clean p-GaN surface amounted to 3.0 eV. A small amount of Sb on GaN(0001) surface reduced the electron affinity to 1.9 eV. The work function of the Sb layer was equal to 4.4 eV. For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1128-1130
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Properties of Structures Containing Films of Alq₃ and LiBr Deposited on Si(111) Crystal
Autorzy:
Sito, J.
Grodzicki, M.
Lament, K.
Wasielewski, R.
Mazur, P.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1033793.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Pr
73.40.Ty
79.60.-i
Opis:
The electronic structures of Alq₃/Si(111) and Alq₃/LiBr/Si(111) interfaces are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq₃ and LiBr layers were vapour deposited onto a single crystal of n-type Si(111). The energy level diagrams were prepared for the structures. The formation of the LiBr interfacial layer results in a decrease of the energy barrier at the interface.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 357-360
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ru/GaN(0001) Interface Properties
Autorzy:
Wasielewski, R.
Grodzicki, M.
Sito, J.
Lament, K.
Mazur, P.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1033790.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.47.Fg
73.30.+y
82.80.Pv
Opis:
We report the results of our studies of ruthenium layer structures adsorbed on GaN(0001). Ruthenium was evaporated at room temperature under ultrahigh vacuum conditions onto n-type GaN substrates epitaxially grown on sapphire. While X-ray photoelectron spectroscopy confirmed the presence of Ru bonds in the deposited adlayers, the ultraviolet photoelectron spectroscopy show a peak at the Fermi level as well as lines originating from ruthenium. The height of the Schottky barrier was calculated based on the data measured by X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy and amounts to 1.5 eV.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 354-357
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Beer as attractant for Arion vulgaris Moquin-Tandon, 1885 (Gastropoda: Pulmonata: Arionidae)
Autorzy:
Piechowicz, B.
Watrakiewicz, R.
Rebisz, E.
Zareba, L.
Balawejder, M.
Pieniazek, M.
Zwolak, A.
Grodzicki, P.
Sadlo, S.
Powiązania:
https://bibliotekanauki.pl/articles/84615.pdf
Data publikacji:
2016
Wydawca:
Uniwersytet Mikołaja Kopernika. Wydział Biologii i Ochrony Środowiska. Stowarzyszenie Malakologów Polskich
Źródło:
Folia Malacologica; 2016, 24, 3
1506-7629
Pojawia się w:
Folia Malacologica
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-10 z 10

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