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Tytuł:
Radiation Damage Centers in Cholesteryl Heptanoate
Autorzy:
Sayin, U.
Can, C.
Türkkan, E.
Dereli, Ö.
Ozmen, A.
Yüksel, H.
Powiązania:
https://bibliotekanauki.pl/articles/1399506.pdf
Data publikacji:
2013-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
Opis:
Cholesterol takes part significantly in many biological mechanisms and as important component for manufacture of bile acids, steroid hormones, and several fat-soluble vitamins. To determine magnetic properties of cholesteryl heptanoate $(C_{34}H_{58}O_2)$ which is an important cholesteryl ester in human life and new technology, the single crystals of cholesteryl heptanoate were grown by slow evaporation of concentrated ethyl acetate solution and the grown single crystals were irradiated at room temperature with $\text{}^{60}Co \gamma $ ray. The radical produced by gamma irradiation has been investigated in the range of temperatures 123-330 K for different orientations of the crystal in a magnetic field by EPR. Radiation damage center was attributed to radical $ĊH_α CH_{2β}$. The g factor and hyperfine coupling constants have slight dependence on temperature and evident dependence on the orientation of the magnetic field. Determined g factor and hyperfine coupling constants for the radical $ĊH_α CH_{2β}$ were found to be anisotropic with the average values $g_{av}=2.0036$, $(a_{CH_\alpha})_{av}=14.52 G, (a_{CH_{2\beta}})_{av}=25.78 G$.
Źródło:
Acta Physica Polonica A; 2013, 124, 1; 70-73
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of High Energy Ion Implantation on the Structure and Mechanical Properties of Aluminium Alloys
Autorzy:
Anishchik, V.
Poliak, N.
Ponaryadov, V.
Opielak, M.
Boiko, O.
Powiązania:
https://bibliotekanauki.pl/articles/1033770.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.80.-x
Opis:
The effect of implantation of Ne⁺, Kr⁺, and Bi⁺ ions over the energy range 26-710 MeV on the structural-phase state and the mechanical properties of the aluminum-based alloys (Al-Cu, Al-Cu-Mg, Al-Cu-Zn, Al-Mn) was studied. The revealed peculiarities of variations in the structure, phase composition, and mechanical properties of aluminum alloys are attributed to the electron deceleration of ions making the principal contribution to the formation of radiation defects which enhance the diffusion processes in the targets.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 291-294
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New Possibilities of Swift Heavy Ion Implantation in Material Science and Technology
Autorzy:
Słowiński, B.
Powiązania:
https://bibliotekanauki.pl/articles/2011021.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
61.80.Jh
Opis:
We summarise briefly the advantages of swift heavy ions (≈ 1 MeV/u) application to analysis and treating of solids in order to modify their properties. As an illustration some examples of this application are quoted.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 239-244
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Materials Modifications with Cluster Beams: Bulk and Surface Modification
Autorzy:
Dunlop, A.
Powiązania:
https://bibliotekanauki.pl/articles/2011014.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.-d
61.80.-x
Opis:
It is now well accepted that electronic excitation and ionization arising from the slowing down of swift heavy ions can lead to structural modifications in some metallic targets as it has been known for a long time in insulators. A rapid overview of some results obtained after GeV monoatomic heavy ion irradiations will be given. It will then be shown that new specific effects take place during irradiations with cluster ions. The projectiles used are energetic cluster beams: 10 to 40 MeV Au$\text{}_{4}$ or C$\text{}_{60}$ ions. The rates of linear energy deposition in electronic excitation are close for GeV monoatomic and for 10 MeV cluster ions, but the cluster ions have characteristic velocities which are one order of magnitude smaller than those of monoatomic ions. This leads to a strong spatial localization of the deposited energy during the slowing down process. The density of deposited energy can then reach values as high as a few 100 eV/atom. This very high density of energy deposited in the electronic system of the targets can lead to spectacular structural modifications: generation in the vicinity of the ion trajectories of isolated or agglomerated point defects, new crystalline phases, amorphized regions... After an overview of such damage induced in bulk metals, semiconductors, and insulators, we will discuss surface damage, consisting in the formation of bumps, craters, "lava-flows" on the target surface.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 181-195
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Deformation in Al$\text{}_{x}$Ga$\text{}_{1-x}$As Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Turos, A.
Grötzschel, R.
Powiązania:
https://bibliotekanauki.pl/articles/2011027.pdf
Data publikacji:
1999-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
A series of highly perfect Al$\text{}_{0.45}$Ga$\text{}_{0.55}$ As epitaxial layers implanted with 1 MeV Si ions to the doses in a range 7×10$\text{}^{13}$-2×10$\text{}^{15}$ ions/cm$\text{}^{2}$ were studied with various conventional and synchrotron X-ray diffraction methods. The presently used methods allowed both the measurement of lattice parameter changes and strain induced deformation. The evaluation of complete strain profiles was also performed by numerical simulation of diffraction curves. It was found that the implantation induced considerable change of lattice parameter reached the maximum at the dose 3×10$\text{}^{14}$ ions/cm$\text{}^{2}$. The recorded curves proved also that the lattice parameter is almost constant in the near surface region of the implanted layers. The applied doses did not cause lattice amorphisation at room temperature.
Źródło:
Acta Physica Polonica A; 1999, 96, 2; 289-293
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interference Fringes in Synchrotron Section Topography of Implanted Silicon with a Very Large Ion Range
Autorzy:
Wieteska, K.
Wierzchowski, W.
Graeff, W.
Dłużewska, K.
Powiązania:
https://bibliotekanauki.pl/articles/1964180.pdf
Data publikacji:
1997-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
Silicon crystals implanted with 9 MeV protons to the dose of 5×10$\text{}^{17}$ cm$\text{}^{-2}$ were studied with X-ray topographic methods using both conventional and synchrotron radiation sources. After the implantation the crystals were thermally and electron annealed. The implantation produced large 600 μm thick shot-through layer while the total thickness of the samples was 1.6 mm. It was confirmed by means of double crystal topography that the whole crystal was elastically bent. The transmission section patterns revealed both parts of the implanted crystal separated by strong contrasts coming from the most damaged layer and distinct interference fringes which appeared on one side of the topograph only. The location of the fringes changed when the beam entered the other side of the sample. The mechanism of fringe formation was studied with numerical integration of the Takagi-Taupin equations, especially studying the intensity distribution in the diffraction plane. The simulations reproduced the location of the fringes in different geometries and indicate that they can be caused both by variable crystal curvature and variable ion dose.
Źródło:
Acta Physica Polonica A; 1997, 91, 5; 1021-1024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Deformation Studies in Silicon Implanted with High-Energy Protons
Autorzy:
Wieteska, K.
Dłużewska, K.
Wierzchowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945258.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.80.-x
Opis:
The deformation of crystal lattice in silicon implanted with protons of energy 1.6-9 MeV was studied by means of X-ray topography and double-crystal rocking curve measurements. The samples were investigated as-implanted and after thermal and electron annealing. The surface relief of the implanted part of the crystal was also revealed with optical methods. As-implanted wafers exhibited spherical bending being convex at the implanted side. Thermal and electron annealing caused a dramatic increase in bending of the implanted part while the bending of the remaining part of the sample was reduced. A characteristic behaviour of a double-crystal topographic contrast in the annealed crystals was explained due to bending of the shot-through layer along the Gaussian profile.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 395-400
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Spin-Lattice Relaxation in Polymers and Crystals Related to Disorder and Structure Defects
Autorzy:
Hoffmann, S. K.
Hilczer, W.
Radczyk, T.
Polus, I.
Powiązania:
https://bibliotekanauki.pl/articles/2035737.pdf
Data publikacji:
2003-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.41.+e
61.80.-x
76.30.-v
Opis:
Temperature dependences (4-300 K) of the electron spin-lattice relaxation have been determined by electron spin echo technique for free radicals in two polymeric systems: phenol-formaldehyde resin and polyhydrazodisulphide. The dependences are described in terms of dynamics specific for amorphous systems involving two-level tunnelling states at low temperatures, exchange-coupled clusters of paramagnetic centres and local oscillators. Some universal temperature behaviour of the spin-lattice relaxation of amorphous systems is suggested, with a strong increase in relaxation rate with temperature at low temperatures and much weaker increase above 50 K with characteristic linear temperature dependence in a broad temperature range and cosech(Δ/kT) -type behaviour. It is also shown that the amorphous-type behaviour appears in low temperatures relaxation studies of single crystals but it is due to a non-uniform distribution of doped paramagnetic ions. Such behaviour we have found in Tutton salt crystals doped with Cu$\text{}^{2+}$, as well as for free radical centres produced by ionising irradiation in (NH$\text{}_{4}$)$\text{}_{3}$H(SeO$\text{}_{4}$)$\text{}_{2}$ and Li(N$\text{}_{2}$H$\text{}_{5}$)SO$\text{}_{4}$ single crystals, where extended phonons are suppressed around radiation damage centres suggesting a local amorphisation of the crystal structure.zapisz i p
Źródło:
Acta Physica Polonica A; 2003, 103, 4; 373-385
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Doping and Irradiation Dependence of Electrical Conductivity of $Fe^{3+}$ and $Ni^{2+}$ Doped Polyvinyl Alcohol Films
Autorzy:
Vijaya Kumar, G.
Chandramani, R.
Powiązania:
https://bibliotekanauki.pl/articles/1537708.pdf
Data publikacji:
2010-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
72.80.Le
61.80.x
Opis:
PVA and doped PVA films were prepared by solution casting. The Change in electrical conductivity of pure PVA and transition elements $FeCl_3$ and $NiCl_2 \cdot 6H_2O$ doped PVA films with and without γ-irradiation in the temperature range 50-130°C has been investigated using four point probe technique. The dc electrical conductivity increases with increase in dopant concentration, with temperature and γ-irradiation. The results revealed that γ-irradiation enhances the electrical conductivity. The variation of electrical conductivity σ with temperature, before and after irradiation is due to the intermolecular hydrogen bonding between $Fe^{3+}$ with OH group of PVA and $Ni^{2+}$ with OH group of PVA. We found that $Fe^{3+}$ doped PVA films show higher conductivity than $Ni^{2+}$ doped PVA films.
Źródło:
Acta Physica Polonica A; 2010, 117, 6; 917-920
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Time Decay of Stable Absorption of Gamma Irradiated LNO, LNO:Cu and YAP:Ce Crystals
Autorzy:
Potera, P.
Powiązania:
https://bibliotekanauki.pl/articles/1205403.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
78.40.-q
61.72.jn
Opis:
The present work is devoted to investigation of stability of stable color centers that are induced by gamma radiation in pure $LiNbO_{3}$, Cu-doped $LiNbO_{3}$ and Ce-doped $YAlO_{3}$ single crystals
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 774-776
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Radiation Defect Centers in Neutron Irradiated Si Using Inverse Laplace Transformation to Analysis of Photocurrent Relaxation Waveforms
Autorzy:
Kamiński, P.
Kozłowski, R.
Żelazko, J.
Powiązania:
https://bibliotekanauki.pl/articles/1361219.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
71.55.-i
61.80.-x
Opis:
High-resolution photoinduced transient spectroscopy has been applied to investigating the effect of the 1 MeV neutron fluence on the electronic properties of radiation defects in Czochralski grown silicon in magnetic field. A new approach to the analysis of the photocurrent relaxation waveforms as a function of time and temperature has been presented. It is based on using a two-dimensional numerical procedure with implementation of the inverse Laplace transformation for creating images of the sharp spectral fringes depicting the temperature dependences of the thermal emission rate for detected defect centers. In the material irradiated with the fluence of 3×$10^{14} cm^{-2}$, the dominant traps with activation energies of 75 meV and 545 meV are tentatively identified with an aggregate of three Si interstitials and the trivacancy, respectively. In the material irradiated with the fluence by the order of magnitude higher, the activation energies of the main traps are found to be 115, 350, 505, 545, and 590 meV. These traps are tentatively attributed to an aggregate of four Si interstitials, as well as to vacancy related centers such as $V_3$ (2-/-), $V_2O$ (-/0), $V_3$ (-/0) and $V_4$ (-/0), respectively.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 976-981
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed
Autorzy:
Żymierska, D.
Godwod, K.
Adamczewska, J.
Auleytner, J.
Choiński, J.
Regiński, K.
Powiązania:
https://bibliotekanauki.pl/articles/2030690.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.Jh
61.80.-x
61.10.-i
85.40.Ry
Opis:
The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10$\text{}^{14}$ ions· cm$\text{}^{-2}$ dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 743-750
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films
Autorzy:
Myroniuk, D.
Lashkarev, G.
Shtepliuk, I.
Lazorenko, V.
Maslyuk, V.
Timofeeva, I.
Romaniuk, A.
Strelchuk, V.
Kolomys, O.
Khomyak, V.
Powiązania:
https://bibliotekanauki.pl/articles/1399153.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.80.-x
78.55.Et
71.55.Gs
Opis:
Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences $10^{16}$ and $2 \times 10^{16} cm^{-2}$. As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 891-894
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Multilayered $Ti-Hf-Si-N//NbN//Al_2O_3$ Coatings with High Physical and Mechanical Properties
Autorzy:
Pogrebnjak, A.
Prozorova, M.
Kovalyova, M.
Kolisnichenko, O.
Beresnev, V.
Oyoshi, K.
Takeda, Y.
Kaverina, A.
Shypylenko, A.
Partyka, J.
Powiązania:
https://bibliotekanauki.pl/articles/1400428.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
41.75.-i
61.80.-x
81.15.-z
Opis:
This work presents the first results on forming of multi-layered superhard coatings $Ti-Hf-Si-N//NbN//Al_2O_3$ and their properties as well as structure. Microstructure, elemental and phase compositions of multi-layered coatings obtained by different methods were investigated. There were used such methods as: scanning electron microscopy EDS JEM-7000F microscope (with microanalysis) for research of cross-section of coatings, with subsequent Auger-electron spectroscopy, X-ray diffraction analysis, optical inverted microscope Olympus GX51, electron-ion microscopes Quanta 200 3D and Quanta 600 (scanning electron microscopy), equipped by the detector of X-ray radiation of the system PEGASUS 2000. It was stated that hardness of coatings has reached 56 GPa, and at the same time the factor of wearing during friction was the smallest - $2.571 \times 10^{-5}$. It was also noted that nitrogen pressure in the chamber at the deposition of the top layer significantly influences on the properties of samples. For example, the coefficient of friction at P=0.3 Pa from 0.2 at the beginning of track to 0.001 (during the tests), and at the pressure of nitrogen P=0.8 Pa, the coefficient of friction was equal to 0.314 at the beginning of track and 0.384 at the end (during the tests).
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 813-815
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Environmental Gamma Dose Evaluation During Explosive Materials Analysis by PGNAA Technique Using MCNPX Code
Autorzy:
Nasrabadi, M.
Omidi, S.
Powiązania:
https://bibliotekanauki.pl/articles/1401224.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
87.52.-g
61.80.-x
78.70.-g
Opis:
Increased use of radiation in medicine, industry, and laboratories, requires safe conditions to be provided for its optimal use. One of the cases in which people are exposed to radiation, is during the detection of explosive materials by PGNAA method. Therefore, external dosimetry is necessary for workplaces where the method is used. In this study, Monte Carlo simulation program, MCNPX has been used to simulate gamma dose in the environment during the detection of explosive materials by PGNAA method. The simulated results were validated practically. The results indicate a good agreement between the simulated and measured data. The study demonstrated that MCNPX code can be used effectively for simulating gamma dose in various environments.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 961-964
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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