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Wyszukujesz frazę "type P" wg kryterium: Wszystkie pola


Tytuł:
Existence of p-Adic Quasi Gibbs Measures for Mixed Type p-Adic Ising λ-Model
Autorzy:
Dogan, M.
Akin, H.
Mukhamedov, F.
Powiązania:
https://bibliotekanauki.pl/articles/1398800.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.50.+q
02.20.Qs
Opis:
We consider nearest-neighbors and next nearest-neighbors p-adic Ising λ-model with spin values {∓ 1} on a Cayley tree of order two. First we prove that the model satisfies the Kolmogorov consistency condition and then we prove that the nonlinear equation corresponding to the model has at least two solutions in $Q_{p}$, where p is a prime number p ≥ 3. One of the roots is in $ε_{p}$ and the others are in $Q_{p}$\$ε_{p}$. If the nonlinear equation has more than one non-trivial solutions for the model then we conclude that p-adic quasi Gibbs measure exists for the model.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 861-864
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A new source of male sterility in rye (Secale cereale L.).
Autorzy:
Warzecha, Roman
Salak-Warzecha, Krystyna
Powiązania:
https://bibliotekanauki.pl/articles/2198914.pdf
Data publikacji:
2003-12-21
Wydawca:
Instytut Hodowli i Aklimatyzacji Roślin
Tematy:
male strility
new sources
rye
type P
type V
Opis:
Pampa cytoplasm has served as the main source of male sterility in hybrid rye breeding programs in Europe for 30 years and there is a need of introducing new CMS sources to prevent cytoplasm uniformity. Several CMS sources were discovered and studied in the former Soviet Union. The CMS sources in rye can be classified into two major groups, the P (Pampa) type and the V (Vavilov) type. The main goal of this study was to widen the “sterile” cytoplasm as a tool for rye hybrid development. ‘Koerntner’ represent the same or similar source of male sterility like CMS ‘CM’ and CMS ‘V type’. This source is genetically different from the sources of male sterility ‘Pampa’ and ‘D. Zlote’-1. In F2 progenies develop by self-pollination F1 plants, of P.6.2-1 × line 113, segregation according to the ratio three male fertile plants to one male sterile, was observed. The segregation ratio in F2 indicate that one or two recessive gene(s) are being involved in the interaction with mutated (S) cytoplasm to cause male sterility.
Źródło:
Plant Breeding and Seed Science; 2003, 48; 61-65
1429-3862
2083-599X
Pojawia się w:
Plant Breeding and Seed Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Note on the congruence of Ankeny-Artin-Chowla type modulo p²
Autorzy:
Jakubec, Stanislav
Powiązania:
https://bibliotekanauki.pl/articles/1390712.pdf
Data publikacji:
1998
Wydawca:
Polska Akademia Nauk. Instytut Matematyczny PAN
Opis:
The results of [2] on the congruence of Ankeny-Artin-Chowla type modulo p² for real subfields of $ℚ(ζ_p)$ of a prime degree l is simplified. This is done on the basis of a congruence for the Gauss period (Theorem 1). The results are applied for the quadratic field ℚ(√p), p ≡ 5 (mod 8) (Corollary 1).
Źródło:
Acta Arithmetica; 1998, 85, 4; 377-388
0065-1036
Pojawia się w:
Acta Arithmetica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Domieszkowanie monokryształów antymonku galu na typ przewodnictwa n oraz na typ p
Doping gallium antimonide single crystals for n-type and p-type conductivity
Autorzy:
Mirowska, A.
Orłowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/192328.pdf
Data publikacji:
2010
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
GaSb
metoda Cz
Te
Si
Zn
koncentracja domieszek
GDMS
Cz method
doping
dopant concentration
Opis:
Monokryształy antymonku galu domieszkowane na typ przewodnictwa n oraz na typ p orientacji < 100 > otrzymane zostały zmodyfikowaną metodą Czochralskiego zintegrowaną z syntezą in-situ. Zbadano wpływ parametrów technologicznych na skuteczność procesu domieszkowania i dobrano parametry w celu otrzymania monokryształów o pożądanym typie przewodnictwa oraz koncentracji nośników. Uzyskano monokryształy GaSb typu n (domieszkowane tellurem) o koncentracji nośników w zakresie od 1 x 10[indeks górny]17 do 1 x 10[indeks górny]18 cm. Otrzymane monokryształy GaSb typu p posiadały koncentrację w zakresie od 4 x 10[indeks górny]17 do 2 x 10[indeks górny]19 cm³ (domieszkowane krzemem) oraz koncentrację od 2 x 10[indeks górny]18 do 1 x 10[indeks górny]19 cm³ (domieszkowane cynkiem). Zbadano wpływ koncentracji domieszki (Te, Zn, Si), jak też sposobu jej wprowadzania (Si), na własności elektryczne otrzymanych kryształów.
Gallium antimonide (GaSb) single crystals with n--type or p-type conductivity were grown by modified Czochralski method integrated with in-situ synthesis. The influence of technological parameters on doping process and its effectivity was investigated. Tellurium doped n-type GaSb single crystals were obtained with carrier concentration from 1 x 10[sup]17 to 1 x 10[sup]18 cm-³. GaSb p-type single crystals were obtained with carrier concentration from 4 x 10[sup]17 to 2 x 10[19] cm-³ (Si-doped) and from 2 x 10[sup]18 to 1 x 10[sup]19 cm-³ (Zn-doped). Dopant concentration was estimated by GDMS analysis.
Źródło:
Materiały Elektroniczne; 2010, T. 38, nr 1, 1; 17-32
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Characteristics of Metal/p-type CdTe Schottky Contacts
Autorzy:
Szatkowski, J.
Sierański, K.
Kasprzak, J. F.
Powiązania:
https://bibliotekanauki.pl/articles/1879831.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.40.Ei
Opis:
The Schottky barrier height of Al, Mg and Ag on chemically prepared p-type surface were measured with I-V techniques. The barrier heights were found to be independent of metal used, and equal to 0.73 ± 0.02 eV.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 175-178
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Realization of p-Type Conductivity in ZnO via Potassium Doping
Autorzy:
Bousmaha, M.
Bezzerrouk, M.
Baghdad, R.
Chebbah, K.
Kharroubi, B.
Bouhafs, B.
Powiązania:
https://bibliotekanauki.pl/articles/1398925.pdf
Data publikacji:
2016-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.dk
81.05.Dz
73.20.At
Opis:
Our work focuses on the study of the electronic structure of undoped and K-doped ZnO using density functional theory as implemented in the Wien2k package. Generalized gradient approximation and GGA plus Tran-Blaha-modified Becke-Johnson (TB-mBJ) were used to calculate the exchange-correlation energy. From the electronic properties, ZnO has a direct band gap in (Γ-Γ) direction with a value of 0.76 eV within GGA and 2.63 eV within GGA + TB-mBJ. For the K-doped ZnO (12.5%) the gap was found to be 1.15 eV within GGA and 3.28 eV within GGA + TB-mBJ, we have observed that an emersion of a new narrow band exists in the valence band which is mainly caused by K 3p states with a little Zn 4s and Zn 3d effect.
Źródło:
Acta Physica Polonica A; 2016, 129, 6; 1155-1158
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Native Deep-Level Defects in MBE-Grown p-Type CdTe
Autorzy:
Olender, K.
Wosiński, T.
Mąkosa, A.
Dłużewski, P.
Kolkovsky, V.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1492964.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
68.37.Lp
61.72.J-
61.72.Lk
Opis:
Deep-level transient spectroscopy was used to study the defect levels in p-type CdTe layers grown by the molecular-beam epitaxy technique on lattice-mismatched GaAs substrates. In our measurements we have observed five hole traps. Two of the traps, displaying exponential capture kinetics, have been assigned to native point defects, the Cd vacancy and a complex formed of Cd vacancy and Te antisite, produced in the CdTe layers during their growth. The other two traps have been attributed to electronic states of threading dislocations on the ground of their logarithmic capture kinetics. The last trap, which was observed only when the investigated space charge region was close to the metal-semiconductor interface, has been ascribed to surface states.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 946-949
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
TiAl-based Ohmic Contacts to p-type 4H-SiC
Autorzy:
Martychowiec, Agnieszka
Kwietniewski, Norbert
Kondracka, Kinga
Werbowy, Aleksander
Sochacki, Mariusz
Powiązania:
https://bibliotekanauki.pl/articles/1844507.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
ohmic contact
SiC
silicon carbide
TiAl
Opis:
This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800°C - 1100°C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts demonstrated structures with Al layer thickness equal or greater than that of Ti layer and annealed at temperatures of 1000°C or higher.
Źródło:
International Journal of Electronics and Telecommunications; 2021, 67, 3; 459-463
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Purinergic signaling in the pancreas and the therapeutic potential of ecto-nucleotidases in diabetes
Autorzy:
Cieślak, Marek
Roszek, Katarzyna
Powiązania:
https://bibliotekanauki.pl/articles/1039191.pdf
Data publikacji:
2014
Wydawca:
Polskie Towarzystwo Biochemiczne
Tematy:
ATP
adenosine
pancreas
diabetes mellitus
P-type receptors
ecto-nucleotidases
Opis:
It is widely accepted that purinergic signaling is involved in the regulation of functions of all known tissues and organs. Extracellular purines activate two classes of receptors, P1-adenosine receptors and P2-nucleotide receptors, in a concentration-dependent manner. Ecto-enzymes metabolizing nucleotides outside the cell are involved in the termination of the nucleotide signaling pathway through the release of ligands from their receptors. The pancreas is a central organ in nutrient and energy homeostasis with endocrine, exocrine and immunoreactive functions. The disturbances in cellular metabolism in diabetes mellitus lead also to changes in concentrations of intra- and extracellular nucleotides. Purinergic receptors P1 and P2 are present on the pancreatic islet cells as well as on hepatocytes, adipocytes, pancreatic blood vessels and nerves. The ATP-dependent P2X receptor activation on pancreatic β-cells results in a positive autocrine signal and subsequent insulin secretion. Ecto-NTPDases play the key role in regulation of extracellular ATP concentration. These enzymes, in cooperation with 5'-nucleotidase can significantly increase ecto-adenosine concentration. It has been demonstrated that adenosine, through activation of P1 receptors present on adipocytes and pancreatic islets cells, inhibits the release of insulin. Even though we know for 50 years about the regulatory role of nucleotides in the secretion of insulin, an integrated understanding of the involvement of purinergic signaling in pancreas function is still required. This comprehensive review presents our current knowledge about purinergic signaling in physiology and pathology of the pancreas as well as its potential therapeutic relevance in diabetes.
Źródło:
Acta Biochimica Polonica; 2014, 61, 4; 655-662
0001-527X
Pojawia się w:
Acta Biochimica Polonica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
DLTS Study of Be-Doped p-Type AlGaAs/GaAs MBE Layers
Autorzy:
Szatkowski, J.
Płaczek-Popko, E.
Sierański, K.
Hansen, O.
Powiązania:
https://bibliotekanauki.pl/articles/1992215.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
71.55.Eq
Opis:
Deep-level transient spectroscopy method was applied to study deep hole traps in p-type Al$\text{}_{0.5}$Ga$\text{}_{0.5}$As grown on GaAs semi-insulating substrate by MBE. Five hole traps labelled by us as H0 to H4 were found. For the traps H1, H3 and H4 thermal activation energies obtained from Arrhenius plots were equal to: E$\text{}_{H1}$=0.15 eV, E$\text{}_{H3}$=0.4 eV, and E$\text{}_{H4}$=0.46 eV. Hole emission from the trap H2 was electric field dependent with the thermal activation energy extrapolated to zero-field equal to 0.37 eV. Capture cross-sections for the traps H1 and H4 were thermally activated with energetic barriers 0.04 eV (for H1) and 0.18 eV (for H4).
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 565-569
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
$(H_p,L_p)$-type inequalities for the two-dimensional dyadic derivative
Autorzy:
Weisz, Ferenc
Powiązania:
https://bibliotekanauki.pl/articles/1287322.pdf
Data publikacji:
1996
Wydawca:
Polska Akademia Nauk. Instytut Matematyczny PAN
Tematy:
Hardy spaces
p-atom
interpolation
Walsh functions
dyadic derivative
Opis:
It is shown that the restricted maximal operator of the two-dimensional dyadic derivative of the dyadic integral is bounded from the two-dimensional dyadic Hardy-Lorentz space $H_{p,q}$ to $L_{p,q}$ (2/3 < p < ∞, 0 < q ≤ ∞) and is of weak type $(L_1,L_1)$. As a consequence we show that the dyadic integral of a ∞ function $f ∈ L_1$ is dyadically differentiable and its derivative is f a.e.
Źródło:
Studia Mathematica; 1996, 120, 3; 271-288
0039-3223
Pojawia się w:
Studia Mathematica
Dostawca treści:
Biblioteka Nauki
Artykuł

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