Autor: Jaroszyński, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: High Mobility 2D Electron Gas in CdTe/CdMgTe Heterostructures
Autorzy:: Karczewski, G.
Jaroszyński, J.
Kutrowski, M.
Barcz, A.
Wojtowicz, T.
Kossut, J.
Powiązania:: https://bibliotekanauki.pl/articles/1968126.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Hm
Opis:: We report on iodine doping of molecular beam epitaxy (MBE)-grown Cd(Mn)Te quasi-bulk films and modulation-doped CdTe/Cd$\text{}_{1-y}$Mg$\text{}_{y}$Te two-dimensional (2D) single quantum well structures. Modulation doping with iodine of CdTe/Cd$\text{}_{1-y}$Mg$\text{}_{y}$Te structures resulted in fabrication of a 2D electron gas with mobility exceeding 10$\text{}^{5}$ cm$\text{}^{2}$/(V s). This is the highest mobility reported in wide-gap II-VI materials.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 829-832
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Indium Doping of CdTe Grown by Molecular Beam Epitaxy
Autorzy:: Karczewski, G.
Zakrzewski, A.
Kutrowski, M.
Jaroszyński, J.
Dobrowolski, W.
Grodzicka, E.
Janik, E.
Wojtowicz, T.
Kossut, J.
Barcz, A.
Powiązania:: https://bibliotekanauki.pl/articles/1932089.pdf
Data publikacji:: 1995-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ln
73.61.Ga
Opis:: We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10$\text{}^{14}$ up to 1.3 × 10$\text{}^{18}$ cm$\text{}^{-3}$. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10$\text{}^{18}$ cm$\text{}^{-3}$). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers.
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 241-244
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Quantum Hall Ferromagnet in Magnetically-Doped Quantum Wells
Autorzy:: Andrearczyk, T.
Jaroszyński, J.
Wróbel, J.
Karczewski, G.
Wojtowicz, T.
Papis, E.
Kamińska, E.
Piotrowska, A.
Popović, D.
Dietl, T.
Powiązania:: https://bibliotekanauki.pl/articles/2036881.pdf
Data publikacji:: 2003-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.43.Nq
72.25.Dc
73.61.Ga
75.50.Pp
Opis:: The article reviews our recent studies on quantum Hall ferromagnetism in diluted magnetic semiconductors. We carried out magnetoresistance studies on modulation-doped, gated heterostructures of (Cd,Mn)Te/(Cd,Mg)Te:I. We put into evidence the formation of Ising quantum Hall ferromagnet with Curie temperature T$\text{}_{C}$ as high as 2 K. Quantum Hall ferromagnetism is manifested by anomalous magnetoresistance maxima. Moreover, magnitude of these spikes depends dramatically on the history of the sample, shows hysteresis when either magnetic field or gate voltage are swept, stretched-exponential time evolution characteristic of glassy systems, and strong Barkhausen noise. Our study suggests that these metastabilities stem from the slow dynamics of ferromagnetic domains.
Źródło:: Acta Physica Polonica A; 2003, 104, 2; 93-102
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Magnetization Steps in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Observed in Coherent Transport
Autorzy:: Jaroszyński, J.
Dietl, T.
Wróbel, J.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Maude, D. K.
van der Linden, P.
Portal, J. C.
Powiązania:: https://bibliotekanauki.pl/articles/1968114.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.15.Rn
73.61.Ga
73.20.Fz
Opis:: Magnetoconductance measurements on submicron wires of n$\text{}^{+}$-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te were carried out up to 27 T and down to 100 mK. The inverse correlation field of the universal conductance fluctuations is found to increase abruptly in the vicinity of the magnetization steps due to Mn pairs in CdMnTe. No such effect is observed in similar wires of CdTe. These findings support a recent model, according to which the correlation field of the universal conductance fluctuations in magnetic systems is inversely proportional to the magnetic susceptibility of the localized spins.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 797-800
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Conductance Fluctuations in Quantum Wires of n-CdTe and n-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
Autorzy:: Jaroszyński, J.
Wróbel, J.
Sawicki, M.
Skośkiewicz, T.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Dietl, T.
Kamińska, E.
Papis, E.
Barcz, A.
Piotrowska, A.
Powiązania:: https://bibliotekanauki.pl/articles/1934061.pdf
Data publikacji:: 1995-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.15.Rn
73.61.Ga
73.20.Fz
Opis:: We present millikelvin studies of magnetoconductance in submicron wires of In-doped n$\text{}^{+}$-CdTe and n$\text{}^{+}$-Cd$\text{}_{0.99}$Mn$\text{}_{0.01}$Te epilayers. Weak-field magnetoresistance which arises from quantum localization as well as universal conductance fluctuations have been observed. The exchange coupling to magnetic impurities is shown to decrease the correlation field of the fluctuations. This novel effect is interpreted by invoking a new driving mechanism of the magnetoconductance fluctuations - the redistribution of the electrons between energy levels of the system, induced by the giant s-d spin-splitting of the electronic states.
Źródło:: Acta Physica Polonica A; 1995, 88, 5; 1000-1004
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 6.

Tytuł:: Dimensional Crossovers in Magnetoresistance of Submicron Films and Wires of CdTe:In
Autorzy:: Jaroszyński, J.
Wróbel, J.
Sawicki, M.
Skośkiewicz, T.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Dietl, T.
Kamińska, E.
Papis, E.
Piotrowska, A.
Duś, R.
Nowakowski, R.
Powiązania:: https://bibliotekanauki.pl/articles/1952536.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Jv
Opis:: We present millikelvin studies of magnetoresistance for epitaxial films and wires of CdTe:In. In comparison to the data with theoretical predictions for the weakly localized regime we put into the evidence the presence of the temperature-induced dimensional crossovers in the studied systems. Our measurements probe the electron phase-breaking rate and indicate that the main dephasing mechanism arises from electron scattering from thermal fluctuations of three- or two-dimensional electron liquid.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 1027-1031
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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